Electronic Processes and Interactions in Amorphous Semiconductors
Electronic Processes and Interactions in Amorphous Semiconductors
批准号:
9108109
负责人:
Hellmut Fritzsche
金额:
$46.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-15 至 1994-06-30
中文摘要
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英文摘要
This project has the objective of understanding the transport of electrons and holes in amorphous semiconductors, their recombination and conduction during light excitation and their local interaction with the amorphous materials. Use will be made of confining the charge carriers spatially in ultrathin layers of amorphous semiconductors to explore the effects of reduced dimensionality. The universal character of different modes of electronic conduction will be explored in various materials including those that interact strongly with electrons and are suspected of forming polarons.
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Photo-induced Changes and Transport in Amorphous Semiconductors
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批准号:9408670
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项目类别:Continuing Grant
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资助金额:$45.0万
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财政年份:1994
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负责人:Hellmut Fritzsche
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依托单位:
Research in Physics at the Tata Institute of Fundamental Research, Travel Award in Indian Currency.
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批准号:8913356
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项目类别:Standard Grant
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资助金额:$0.2万
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财政年份:1989
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负责人:Hellmut Fritzsche
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依托单位:
U.S.-China Cooperative Research (Solid State Physics): Elec-tronic Transport in Amorphous Silicon Multilayers
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批准号:8718328
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项目类别:Standard Grant
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资助金额:$2.48万
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财政年份:1988
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负责人:Hellmut Fritzsche
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依托单位:
Electronic Structures of Amorphous Semiconductors
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批准号:8806197
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项目类别:Continuing Grant
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资助金额:$48.48万
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财政年份:1988
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负责人:Hellmut Fritzsche
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依托单位:
U.S.-China Cooperative Research: Improvement of Amorphous Silicon Semiconductors
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批准号:8619493
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项目类别:Standard Grant
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资助金额:$2.81万
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财政年份:1987
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负责人:Hellmut Fritzsche
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依托单位:
Amorphous Semiconductor Multilayers (Materials Research)
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批准号:8504717
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项目类别:Continuing Grant
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资助金额:$52.4万
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财政年份:1985
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负责人:Hellmut Fritzsche
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依托单位:
Topical Conference on Transport and Defects in Amorphous Semiconductors (Materials Research), Institute for Amorphous Studies, Bloomfield Hills, Mi., March 22-24, 1984
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批准号:8405335
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项目类别:Standard Grant
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资助金额:$0.25万
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财政年份:1984
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负责人:Hellmut Fritzsche
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依托单位:
Improvement of Amorphous Silicon Semiconductors
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批准号:8203084
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项目类别:Standard Grant
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资助金额:$2.0万
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财政年份:1982
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负责人:Hellmut Fritzsche
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依托单位:
Undergraduate Research Participation
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批准号:8026163
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项目类别:Standard Grant
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资助金额:$1.84万
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财政年份:1981
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负责人:Hellmut Fritzsche
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依托单位:
Group Travel For U.S. Participants in the 15th Intl Conference on the Physics of Semiconductors; Kyoto, Japan - Sept 1-5, 1980
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批准号:8008603
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项目类别:Standard Grant
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资助金额:$0.9万
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财政年份:1980
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负责人:Hellmut Fritzsche
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依托单位:
Electronic Properties of Disordered Semiconductors (Materials Research)
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批准号:8009225
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项目类别:Continuing Grant
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资助金额:$67.73万
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财政年份:1980
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负责人:Hellmut Fritzsche
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依托单位:
Undergraduate Research Participation
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批准号:7926940
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项目类别:Standard Grant
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资助金额:$1.56万
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财政年份:1980
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负责人:Hellmut Fritzsche
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依托单位:
Special Foreign Currency Travel Support For Participation InThe U.S.-India Exchange of Scientists Program
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批准号:7919082
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项目类别:Standard Grant
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资助金额:$0.2万
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财政年份:1980
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负责人:Hellmut Fritzsche
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依托单位:
Undergraduate Research Participation
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批准号:7827293
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项目类别:Standard Grant
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资助金额:$1.19万
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财政年份:1979
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负责人:Hellmut Fritzsche
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依托单位:
Travel to the 14th International Conference on the Pyhsics Of Semiconductors, Edinburgh, 4-8 September 1978
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批准号:7815493
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项目类别:Standard Grant
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资助金额:$0.6万
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财政年份:1978
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负责人:Hellmut Fritzsche
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依托单位:
Disordered Semiconductors
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批准号:7711683
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项目类别:Continuing Grant
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资助金额:$29.2万
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财政年份:1977
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负责人:Hellmut Fritzsche
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依托单位:
Studies of Disordered Semiconductors
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批准号:7515003
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项目类别:Standard Grant
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资助金额:$15.99万
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财政年份:1975
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负责人:Hellmut Fritzsche
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依托单位:
Instructional Scientific Equipment Program
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批准号:7416591
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项目类别:Standard Grant
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资助金额:$1.77万
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财政年份:1974
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负责人:Hellmut Fritzsche
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依托单位:
Research in Materials Sciences
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批准号:7203028
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项目类别:Standard Grant
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资助金额:$268.7万
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财政年份:1972
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负责人:Hellmut Fritzsche
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依托单位:
国内基金
海外基金
Submesoscale Processes Associated with Oceanic Eddies
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批准号:--
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项目类别:--
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资助金额:160万元
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批准年份:2022
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负责人:董昌明
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依托单位: