Electronic Processes and Interactions in Amorphous Semiconductors

非晶半导体中的电子过程和相互作用

• 批准号: 9108109
• 负责人: Hellmut Fritzsche
• 金额: $ 46万
• 依托单位: University of Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-07-15 至 1994-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9108109&HistoricalAwards=false
• 关键词: Electronic; Processes; Interactions; Amorphous; Semiconductors

This project has the objective of understanding the transport of electrons and holes in amorphous semiconductors, their recombination and conduction during light excitation and their local interaction with the amorphous materials. Use will be made of confining the charge carriers spatially in ultrathin layers of amorphous semiconductors to explore the effects of reduced dimensionality. The universal character of different modes of electronic conduction will be explored in various materials including those that interact strongly with electrons and are suspected of forming polarons.

这个项目的目的是了解电子和空穴在非晶半导体中的输运，它们在光激发过程中的重组和传导以及它们与非晶材料的局部相互作用。将利用将载流子空间限制在非晶半导体的超薄层中来探索降维效应。我们将在各种材料中探索不同电子传导模式的普遍特征，包括那些与电子强烈相互作用并被怀疑形成极化子的材料。