Electronic Structures of Amorphous Semiconductors

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The research project is aimed at understanding the nature of metastable electronic and structural states in amorphous semiconductors, their relaxation to equilibrium and their relation to structural and compositional heterogeneities will be controlled by preparing multilayered hydrogenated amorphous silicon that consist of ultrathin layers of different compositions or dopant concentrations in order to optimize a variety of new electronic properties. Methods will be explored to further control and modify the electronic properties of field- induced and photo-induced reversible structural changes.