Electronic Structures of Amorphous Semiconductors

非晶半导体的电子结构

• 批准号: 8806197
• 负责人: Hellmut Fritzsche
• 金额: $ 48.48万
• 依托单位: University of Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-06-15 至 1991-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8806197&HistoricalAwards=false
• 关键词: Electronic; Structures; Amorphous; Semiconductors

The research project is aimed at understanding the nature of metastable electronic and structural states in amorphous semiconductors, their relaxation to equilibrium and their relation to structural and compositional heterogeneities will be controlled by preparing multilayered hydrogenated amorphous silicon that consist of ultrathin layers of different compositions or dopant concentrations in order to optimize a variety of new electronic properties. Methods will be explored to further control and modify the electronic properties of field- induced and photo-induced reversible structural changes.

该研究项目旨在了解非晶半导体中亚稳态电子和结构态的本质，通过制备由不同成分或掺杂浓度的超薄层组成的多层氢化非晶硅来控制它们的弛豫平衡及其与结构和组成异质性的关系，以优化各种新的电子性能。将探索进一步控制和修改场致和光致可逆结构变化的电子性质的方法。