INGAAS/GAAS Pseudomorphic Hemts for High Speed Circuit Applications

用于高速电路应用的 INGAAS/GAAS 赝晶 Hemt

• 批准号: 8821639
• 负责人: David Allstot
• 金额: $ 34.1万
• 依托单位: Oregon State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-06-01 至 1992-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8821639&HistoricalAwards=false
• 关键词: INGAAS; GAAS; Pseudomorphic; Hemts; Speed

This proposal combines circuit design, material growth and characterization, and device test capabilities of Oregon State University with the industrial circuit fabrication facilities of TriQuint Semiconductor, Inc. to build and test high speed devices and circuits from strained pseudomorphic III-V ternary materials. InGaAs/GaAs and InGaAs/AlGaAs pseudomorphic HEMT structures will be grown by molecular beam epitaxy at OSU using a variety of structural parameters to optimize material properties. In particular, the investigators propose to grow ordered ternary material by growing binary superlattices; they will also grow both n- and p- channel material. The MBE material will be extensively characterized by optical and electrical measurements. The wafers will then be processed into a variety of test devices and integrated circuits at TriQuint at no cost to the National Science Foundation, after which the device and circuit performance will be fully tested and characterized using the facilities of both TriQuint and OSU. Based on the complete characterization new mask sets will then be designed at OSU and fabricated at Tektronix in order to optimize circuit performance.

该提案结合了电路设计、材料生长和 俄勒冈州的特性和设备测试能力 大学的工业电路制造设施， Microelectronics，Inc.制造和测试高速设备， 应变赝晶III-V族三元材料的电路。 InGaAs/GaAs和InGaAs/AlGaAs赝晶HEMT结构将在 在OSU通过分子束外延生长，使用各种结构 参数优化材料性能。 特别是 研究者提出通过生长有序三元材料 二元超晶格，它们也将生长n沟道和p沟道 材料 分子束外延材料将广泛的特点是： 光学和电学测量。 然后将晶片 加工成各种测试器件和集成电路， TriQuint不向国家科学基金会提供任何费用， 器件和电路性能将得到全面测试， 使用TriQuint和OSU的设施进行表征。 基于 然后，将在 OSU，并在泰克制造，以优化电路 性能