INGAAS/GAAS Pseudomorphic Hemts for High Speed Circuit Applications

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This proposal combines circuit design, material growth and characterization, and device test capabilities of Oregon State University with the industrial circuit fabrication facilities of TriQuint Semiconductor, Inc. to build and test high speed devices and circuits from strained pseudomorphic III-V ternary materials. InGaAs/GaAs and InGaAs/AlGaAs pseudomorphic HEMT structures will be grown by molecular beam epitaxy at OSU using a variety of structural parameters to optimize material properties. In particular, the investigators propose to grow ordered ternary material by growing binary superlattices; they will also grow both n- and p- channel material. The MBE material will be extensively characterized by optical and electrical measurements. The wafers will then be processed into a variety of test devices and integrated circuits at TriQuint at no cost to the National Science Foundation, after which the device and circuit performance will be fully tested and characterized using the facilities of both TriQuint and OSU. Based on the complete characterization new mask sets will then be designed at OSU and fabricated at Tektronix in order to optimize circuit performance.