Chemical Vapor Deposition Epitaxial Buffer Layers for Superconductors

这项研究的目的是开发化学气相沉积(CVD)生长的外延缓冲层，它将在低损耗单晶衬底和外延单晶高温超导薄膜之间提供扩散/反应势垒和晶体结构和晶格参数的转变。第一阶段将通过同质外延建立概念证明。例如，在单晶氧化镁衬底上生长氧化镁薄膜，在单一的氧化镧铝衬底上生长氧化铝镧薄膜。将对薄膜的结晶质量、表面平整度和均匀性进行评估，并将调整工艺条件以优化薄膜性能。在第二阶段，该工艺将扩展到异质外延，目标是为微波应用非常需要的单晶氧化铝(蓝宝石)等衬底上的超导薄膜提供外延缓冲层。

The objective of the proposed research is to develop epitaxial buffer layers grown by chemical vapor deposition (CVD) that will provide both a diffusion/reaction barrier and a transition in crystal structure and lattice parameter between a low loss single crystal substrate and an epitaxial, single crystal high temperature superconducting film. Phase I will establish proof of concept via homoepitaxy. For example magnesium oxide films will be grown on sing crystal magnesium oxide substrates and lanthanum aluminum oxide films will be grown on single lanthanum aluminum oxide substrates. The films will be evaluated for crystal quality, surface smoothness and uniformity, and process conditions will be adjusted to optimize film properties. In Phase II the process will be extended to heteroepitaxy, with the goal of providing epitaxial buffer layers for superconducting films on substrates such as single crystal aluminum oxide (sapphire) that are high desirable for microwave applications.