Support of the Second International Symposium on Atomic Layer Epitaxy, Raleigh, North Carolina, June 3-5, 1992

原子层外延（ALE）国际研讨会 相对较新的外延子领域，正在举行评估ALE 领域，并建立大学之间的联系， 机构和行业。据估计，世界顶级科学家 该领域将出席，研讨会将提供一个 有效论坛，以讨论和界定 在这个研究领域的问题，并考虑和定义 解决这些问题所需的方法和技术。理解和 在原子水平上控制过程变得越来越重要， 对于电子和光子材料很重要，ALE代表了 一种通过该方法实现逐层控制的有利方式 该过程的自我限制方面产生精确的层 在原子尺度上的厚度和均匀性超过晶片尺度 尺寸. %%% 对执法教育现状的评估以及 讨论会与会者今后工作的重点， 对当代最重要的研究问题的评估将 对理解和发展 ALE的技术，以及其随后在该领域的应用 微电子学。

An International Symposium on Atomic Layer Epitaxy(ALE), a relatively new subfield of epitaxy, is being held to assess the ALE field, and to establish ties between universities, research institutions, and industry. It is expected that top scientists in the field will attend, and that the symposium will provide an effective forum to discuss and delineate the critical scientific issues in this research area, and to consider and define the approaches and techniques needed to address them. Understanding and controlling processes at the atomic level are becoming increasingly important for electronic and photonic materials, and ALE represents an advantageous way of achieving layer-by-layer control through the self limiting aspects of the process to yield accurate layer thicknesses and uniformity on an atomic scale over wafer-scale dimensions. %%% An evaluation of the status of ALE, and recommendations by the symposium participants for the emphasis of future work, and their assessment of the most important contemporary research issues will be of great value to the understanding and development of the technique of ALE, and for its subsequent utilization in the field of microelectronics.