Support of the Second International Symposium on Atomic Layer Epitaxy, Raleigh, North Carolina, June 3-5, 1992

原子层外延（ALE）是外延的一个相对较新的分支领域，正在举行国际研讨会，以评估ALE领域，并建立大学，研究机构和工业界之间的联系。预计该领域的顶尖科学家将出席，研讨会将提供一个有效的论坛来讨论和描述该研究领域的关键科学问题，并考虑和确定解决这些问题所需的方法和技术。在原子水平上理解和控制过程对电子和光子材料来说变得越来越重要，ALE代表了一种通过该工艺的自限制方面实现逐层控制的有利方法，从而在晶圆尺度的原子尺度上产生精确的层厚度和均匀性。研讨会的与会者对电偶极态的现状进行了评估，并提出了今后工作重点的建议，对当代最重要的研究问题进行了评估，这对理解和发展电偶极态技术及其在微电子领域的后续应用具有重要价值。

An International Symposium on Atomic Layer Epitaxy(ALE), a relatively new subfield of epitaxy, is being held to assess the ALE field, and to establish ties between universities, research institutions, and industry. It is expected that top scientists in the field will attend, and that the symposium will provide an effective forum to discuss and delineate the critical scientific issues in this research area, and to consider and define the approaches and techniques needed to address them. Understanding and controlling processes at the atomic level are becoming increasingly important for electronic and photonic materials, and ALE represents an advantageous way of achieving layer-by-layer control through the self limiting aspects of the process to yield accurate layer thicknesses and uniformity on an atomic scale over wafer-scale dimensions. %%% An evaluation of the status of ALE, and recommendations by the symposium participants for the emphasis of future work, and their assessment of the most important contemporary research issues will be of great value to the understanding and development of the technique of ALE, and for its subsequent utilization in the field of microelectronics.