Support of the Second International Symposium on Atomic Layer Epitaxy, Raleigh, North Carolina, June 3-5, 1992

原子层外延(ALE)是外延的一个相对较新的分支领域，正在举行一次国际研讨会，以评估ALE领域，并在大学、研究机构和产业界之间建立联系。预计该领域的顶尖科学家将出席，专题讨论会将提供一个有效的论坛，讨论和描述这一研究领域的关键科学问题，并审议和确定解决这些问题所需的方法和技术。在原子水平上理解和控制工艺对于电子和光子材料正变得越来越重要，而ALE代表了一种通过工艺的自我限制实现逐层控制的有利方式，从而在原子尺度上在晶片尺度上产生精确的层厚度和一致性。%对ALE现状的评估，以及与会者对未来工作重点的建议，以及他们对最重要的当代研究问题的评估，将对ALE技术的理解和发展具有重要价值，以及其在微电子领域的后续应用。

An International Symposium on Atomic Layer Epitaxy(ALE), a relatively new subfield of epitaxy, is being held to assess the ALE field, and to establish ties between universities, research institutions, and industry. It is expected that top scientists in the field will attend, and that the symposium will provide an effective forum to discuss and delineate the critical scientific issues in this research area, and to consider and define the approaches and techniques needed to address them. Understanding and controlling processes at the atomic level are becoming increasingly important for electronic and photonic materials, and ALE represents an advantageous way of achieving layer-by-layer control through the self limiting aspects of the process to yield accurate layer thicknesses and uniformity on an atomic scale over wafer-scale dimensions. %%% An evaluation of the status of ALE, and recommendations by the symposium participants for the emphasis of future work, and their assessment of the most important contemporary research issues will be of great value to the understanding and development of the technique of ALE, and for its subsequent utilization in the field of microelectronics.