Atomic Layer Epitaxy of S-Doped FETs

点击翻译按钮获取中文摘要

A new epitaxial growth technique (Atomic Layer Epitaxy) will be used to grow a rapidly developing transistor structure ( -doped FET). Atomic Layer Epitaxy (ALE) has several advantages over other growth techniques for such application since it allows low temperature deposition, with less diffusion of the doping spikes, better control of the incorporation dopant with higher carrier concentration and mobility uniform thickness over large area wafer, abrupt interfaces and reduction of native defects. The potential of ALE on improving the performance of -doped FET structures will be the subject of the proposed investigations. -doped structures will be fabricated in GaAs and InGaAs material systems, while MODFETs with doping spikes will use AlGaAs, InGaP and strained GaAsP high bandgap ternary alloys. Monte Carlo transport calculation will be applied to these newly developed structures.