Atomic Layer Epitaxy of S-Doped FETs

S 掺杂 FET 的原子层外延

• 批准号: 8822892
• 负责人: S. Bedair
• 金额: $ 29.61万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-07-01 至 1994-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8822892&HistoricalAwards=false
• 关键词: Atomic; Layer; Epitaxy; Doped; FETs

A new epitaxial growth technique (Atomic Layer Epitaxy) will be used to grow a rapidly developing transistor structure ( -doped FET). Atomic Layer Epitaxy (ALE) has several advantages over other growth techniques for such application since it allows low temperature deposition, with less diffusion of the doping spikes, better control of the incorporation dopant with higher carrier concentration and mobility uniform thickness over large area wafer, abrupt interfaces and reduction of native defects. The potential of ALE on improving the performance of -doped FET structures will be the subject of the proposed investigations. -doped structures will be fabricated in GaAs and InGaAs material systems, while MODFETs with doping spikes will use AlGaAs, InGaP and strained GaAsP high bandgap ternary alloys. Monte Carlo transport calculation will be applied to these newly developed structures.

一种新的外延生长技术（原子层外延）将用于生长一种快速发展的晶体管结构（掺杂场效应管）。与其他生长技术相比，原子层外延（ALE）具有许多优点，因为它允许低温沉积，较少的掺杂峰扩散，更好地控制掺杂剂的掺入，具有更高的载流子浓度和迁移率，在大面积晶圆上均匀的厚度，突然的界面和减少天然缺陷。ALE在改善掺杂FET结构性能方面的潜力将是所提出的研究主题。-掺杂结构将在GaAs和InGaAs材料体系中制造，而掺杂尖峰的modfet将使用AlGaAs， InGaP和应变GaAsP高带隙三元合金。蒙特卡罗输运计算将应用于这些新开发的结构。