Laser Beam Selected Epitaxy of III-V Compounds

III-V 族化合物的激光束选择外延

• 批准号: 8820245
• 负责人: S. Bedair
• 金额: $ 29.8万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-01-01 至 1992-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8820245&HistoricalAwards=false
• 关键词: Laser; Beam; Selected; Epitaxy; III

The research is a renewal of a grant by The National Science Foundation to Professor S. M. Bedair, North Carolina State University, to investigate the potential of laser enhanced metallorganic vapor deposition to selectively deposit epitaxial films of compound semiconductors on gallium silicon substrates. The previous award by the Foundation to Professor Bedair was a Special Creativity Award. During the previous grant several significant accomplishments were made, e.g., establishment of the experimental conditions for selective epitaxy and direct writing of single crystals of gallium arsenide, aluminum gallium arsenide, gallium arsenic phosphide, and indium gallium arsenide on gallium arsenide and silicon substrates, growth of compound semiconductors by laser-enhanced chemical vapor deposition at the lowest reported temperatures (250oC), and growth of superlattices using chemical vapor deposition without gas switching. The research during this continuation period will emphasize the following: thermal processing during laser-enhanced chemical deposition, study of effects of thermal stress on the quality of the films, study of gas dynamics during growth, study of doping behavior and electrical properties of the films, and low temperature deposition, direct laser writing during deposition. The research is relevant to maskless writing and growth of optoelectronic devices, and advanced epitaxial growth of integrated optical and electronic materials. Optoelectronic materials will impact communications and optical processing devices which are important to the economic competitiveness of the United States. Students are receiving excellent training under the grant for careers in research on these vital materials.

这项研究是《国家科学》杂志资助的一项更新 教授S。M.北卡罗来纳州州贝代尔 大学，研究激光增强 选择性存款外延层的金属有机气相淀积 镓硅衬底上的化合物半导体薄膜。 基金会先前授予Bedair教授的奖项是一个 特别创意奖。 在过去的几年里， 取得了重大成就，例如，成立 选择性外延和直接写入的实验条件 砷化镓、铝镓单晶 砷化物、砷化镓磷化物和铟镓砷化物 在砷化镓和硅衬底上， 半导体激光增强化学气相沉积 最低温度（250 ℃）和超晶格的生长 使用化学气相沉积而不进行气体切换。的 在此期间的研究将强调 以下：激光增强化学过程中的热处理 沉积，研究热应力对沉积质量的影响， 薄膜，生长过程中的气体动力学研究，掺杂研究 行为和电性能的薄膜，和低 温度沉积，在沉积期间直接激光写入。 这项研究与无掩模书写和 光电器件和先进的外延生长 集成光电材料 光电 材料将影响通信和光学处理 对经济竞争力至关重要的设备 美国的 学生们正在接受优秀的培训 根据对这些重要材料的研究事业的资助。