Engineering Strain in InGaN/GaN Multiple Quantum Wells for Improved Optical Devices

用于改进光学器件的 InGaN/GaN 多量子阱中的工程应变

• 批准号: 1407772
• 负责人: S. Bedair
• 金额: $ 36.3万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1407772&HistoricalAwards=false
• 关键词: Engineering; Strain; InGaN; GaN; Multiple

This grant is funded jointly by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS) and by the Electronic and Photonic Materials (EPM) Program in the Division of Materials Research (DMR).The proposed research addresses fundamental issues related to material growth and control of strain in Quantum-Wells through experimental and theoretical studies. The outcomes of this work include new material growth techniques and technology of optical devices that are vital for advancing the current state of the art LED technology. An enormous advantage is expected in the cost of solid state lighting by enabling device operation with higher injection current. Both graduate and undergraduate students will be involved in the research and will be trained in interdisciplinary areas. The proposed research is a unique opportunity for graduate and undergraduate students at to acquire interdisciplinary training and research experience in the field solid state lighting and optical displays. These students will be positioned to become the next generation leaders in advanced lighting technology. The project's goal is to integrate technical and scientific achievements through this requested funding with industries. Material growth approaches using Metal Organic Chemical Vapor Deposition (MOCVD) are proposed to allow control of the impact of strain on GaN based devices and improve the characteristics of Light Emitting Diodes (LEDs) such as quantum efficiency and droop. Strain balanced multiple quantum well (SBMQW) structures made of a thick InxGa1-xN template on which InyGa1-yN/GaN Multi-Quantum-Wells (MQWs) with x y will be grown. They will consist of tensile-stressed GaN barriers and compressive-stressed InyGa1-yN wells. Different x, y values and well, barrier thicknesses will be explored to evaluate their impact on emission wavelength. Designs will be explored where the tensile and compressive stresses are balanced out allowing MQWs to match the lattice parameter of the InxGa1-xN substrate. The experimental studies will be supported by theoretical modeling of strain. A special MOVD reactor will be employed to reduce gas phase reactions and increase the InN composition. The growth rate and temperature will be suitably adjusted to optimize the thick InGaN substrates. Planar and side-wall LED structures will be explored to demonstrate the advantages of the proposed material strain studies and obtain longer emission wavelengths and better External Quantum Efficiency than conventional InGaN/GaN QW structures. The research will advance the basic understanding of the strain in InGaN/GaN Multi-Quantum-Wells through experimental and theoretical studies. It will allow to advance the current state of the art LED technology.

该基金由电气、通信和网络系统部（ECCS）的电子、光子学和磁器件（EPMD）项目和材料研究部（DMR）的电子和光子材料（EMPs）项目共同资助。拟议的研究通过实验和理论研究解决与量子阱中的材料生长和应变控制相关的基本问题。这项工作的成果包括新的材料生长技术和光学器件技术，这些技术对于推进当前最先进的LED技术至关重要。通过使器件能够以更高的注入电流工作，预期在固态照明的成本方面具有巨大的优势。 研究生和本科生都将参与研究，并将在跨学科领域接受培训。 拟议的研究是一个独特的机会，研究生和本科生在获得跨学科的培训和研究经验，在该领域的固态照明和光学显示器。这些学生将被定位为先进照明技术的下一代领导者。该项目的目标是通过所要求的资金将技术和科学成就与工业结合起来。提出了使用金属有机化学气相沉积（MOCVD）的材料生长方法，以允许控制应变对GaN基器件的影响，并改善发光二极管（LED）的特性，例如量子效率和下降。 应变平衡多量子阱（SBMQW）结构由厚的InxGa 1-xN模板制成，在其上生长具有x y的InyGa 1-yN/GaN多量子威尔斯（MQW）。它们将由拉伸应力GaN势垒和压缩应力InyGa 1-yN威尔斯阱组成。将探索不同的x、y值以及阻挡层厚度，以评估它们对发射波长的影响。设计将探讨的拉伸和压缩应力的平衡，允许MQWs匹配的InxGa 1-xN基板的晶格参数。实验研究将得到应变理论模型的支持。将采用特殊的MOVD反应器来减少气相反应并增加InN成分。生长速率和温度将被适当地调整以优化厚InGaN衬底。平面和侧壁LED结构将被探索，以证明所提出的材料应变研究的优势，并获得更长的发射波长和更好的外部量子效率比传统的InGaN/GaN量子阱结构。本论文的研究将通过实验和理论的研究，加深对InGaN/GaN多量子威尔斯阱中应变的基本认识。它将允许推进最先进的LED技术的当前状态。