GOALI:Cooperative Integration of High Efficiency Multijunction Solar Cell Structures

目标:高效多结太阳能电池结构的协同集成

基本信息

  • 批准号:
    1102060
  • 负责人:
  • 金额:
    $ 38.56万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2011
  • 资助国家:
    美国
  • 起止时间:
    2011-10-01 至 2016-09-30
  • 项目状态:
    已结题

项目摘要

The objective of this research is to develop a multijunction solar cell which has the potential to exceed the current record solar-to-electric energy conversion efficiency of 41.6%. This cell uses a tandem germanium/gallium arsenide/indium gallium phosphide structure, which is limited by the current generated in the top two cells. The approach is to integrate strained layer superlattices into both of these cells in order to reduce the bandgap. The resulting potentially significant increase in the current generated by the top and middle cells with only a small decrease in voltage, should improve the efficiency of the multijunction photovoltaic device.This work will impact the science of photovoltaic devices and strained layer superlattices. The ability to extend the optical absorption of the solar spectrum beyond that of conventional GaAs solar cells has been a long-standing problem since the demonstration of the first multijunction PV device. The proposed work will extend this absorption region while maintaining lattice matching of dissimilar materials, and thus carrier lifetimes. Strained layer superlattices have wide applicability in other applications as well, such as photodetectors and optical modulators for high frequency communications and sensing.Photovoltaic materials have the potential to provide a clean and renewable energy source. The project will train students in a number of skills used in the semiconductor industry such as growth, fabrication, characterization and device modeling. This will include the participation of undergraduate, minority students, and high school students and teachers.
这项研究的目标是开发一种多结太阳能电池,它有可能超过目前41.6%的太阳能-电能转换效率记录。该电池采用串联锗/砷化镓/磷化铟镓结构,受顶部两个电池产生的电流限制。该方法是将应变层超晶格集成到这两个细胞中,以减小带隙。由此产生的由顶部和中间电池产生的电流可能会显著增加,而电压只会小幅下降,这应该会提高多结光伏器件的效率。这项工作将对光伏器件和应变层超晶格的科学产生影响。自第一个多结PV器件演示以来,将太阳光谱的光吸收扩展到传统砷化镓太阳能电池之外的能力一直是一个长期存在的问题。所提出的工作将扩展该吸收区域,同时保持不同材料的晶格匹配,从而延长载流子寿命。应变层超晶格在其他应用中也有广泛的适用性,例如用于高频通信和传感的光电探测器和光调制器。光伏材料具有提供清洁和可再生能源的潜力。该项目将培养学生在半导体行业中使用的一些技能,如生长、制造、表征和器件建模。这将包括本科生、少数民族学生、高中生和教师的参与。

项目成果

期刊论文数量(0)
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会议论文数量(0)
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S. Bedair其他文献

Chapter 6 Indium-based Nitride Compounds
第六章 铟基氮化物
  • DOI:
    10.1016/s0080-8784(08)63087-2
  • 发表时间:
    1997
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Bedair
  • 通讯作者:
    S. Bedair
Self-Detachable Through-Metal Acoustic Wireless Power Transfer
自拆卸式金属声学无线电力传输
Properties of p+‐n+ AlGaAs diodes
p+‐n+ AlGaAs 二极管的特性
  • DOI:
  • 发表时间:
    1980
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Bedair
  • 通讯作者:
    S. Bedair
Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures
GaN:Mn/GaN:Mg 异质结构中载流子介导的铁磁性的证据
  • DOI:
    10.1557/proc-831-e9.2
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    E. Arkun;M. J. Reed;E. A. Berkman;N. El;J. Zavada;M. O. Luen;M. Reed;S. Bedair
  • 通讯作者:
    S. Bedair
A Model for Indium Incorporation in the Growth of InGaN Films
InGaN 薄膜生长中掺入铟的模型
  • DOI:
    10.1557/proc-449-85
  • 发表时间:
    1996
  • 期刊:
  • 影响因子:
    0
  • 作者:
    E. Piner;F. G. McIntosh;J. Roberts;K. Boutros;M. Aumer;V. Joshkin;N. El;S. Bedair;S. X. Liu
  • 通讯作者:
    S. X. Liu

S. Bedair的其他文献

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{{ truncateString('S. Bedair', 18)}}的其他基金

EAGER: Tandem solar cells of two dissimilar material systems
EAGER:两种不同材料系统的串联太阳能电池
  • 批准号:
    1665211
  • 财政年份:
    2017
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Standard Grant
Engineering Strain in InGaN/GaN Multiple Quantum Wells for Improved Optical Devices
用于改进光学器件的 InGaN/GaN 多量子阱中的工程应变
  • 批准号:
    1407772
  • 财政年份:
    2014
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Standard Grant
Growth of Low Defect Density III-Nitride Compounds on Nanowires
低缺陷密度 III 族氮化物在纳米线上的生长
  • 批准号:
    1105842
  • 财政年份:
    2011
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Continuing Grant
Support of the Second International Symposium on Atomic Layer Epitaxy, Raleigh, North Carolina, June 3-5, 1992
支持第二届原子层外延国际研讨会,北卡罗来纳州罗利,1992 年 6 月 3-5 日
  • 批准号:
    9123438
  • 财政年份:
    1992
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Standard Grant
Laser Beam Selected Epitaxy of III-V Compounds
III-V 族化合物的激光束选择外延
  • 批准号:
    8820245
  • 财政年份:
    1989
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Continuing Grant
Atomic Layer Epitaxy of S-Doped FETs
S 掺杂 FET 的原子层外延
  • 批准号:
    8822892
  • 财政年份:
    1989
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Continuing Grant
Laser Beam Selected Epitaxy of III-IV Compounds (Materials Research)
III-IV 化合物的激光束选择外延(材料研究)
  • 批准号:
    8303914
  • 财政年份:
    1983
  • 资助金额:
    $ 38.56万
  • 项目类别:
    Continuing Grant

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