EAGER: Tandem solar cells of two dissimilar material systems

EAGER：两种不同材料系统的串联太阳能电池

• 批准号: 1665211
• 负责人: S. Bedair
• 金额: $ 29.99万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-05-01 至 2022-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1665211&HistoricalAwards=false
• 关键词: EAGER; Tandem; solar; cells; two

ECCS-1665211Bedair, S. M.North Carolina State UniversityEAGER: Tandem Solar Cells of Two Dissimilar Material SystemsABSTRACTTandem solar cells are an approach capable of achieving a conversion efficiency higher than 45%. This approach involves stacking several cells with different properties for the optimum utilization of the solar spectrum. Currently all satellite and space communication systems are powered by tandem solar cell structures. However these structures suffer from several limitations such as cost and material related issues. They thus cannot compete for terrestrial applications which are currently dominated by silicon and inexpensive cell technology with efficiencies less than 20%. The goal of this EAGER project is to develop the science and technology to allow the high efficiency tandem cell concept to be applied to cells made from inexpensive material systems. We propose a new approach that relies on intermetallic bonding (IMB) to assemble two or more cells that may be composed of dissimilar material systems into a tandem cell structure. This IMB approach can impact several different fields such as LEDs emitting at different wavelengths and dual wavelength photodetectors. Graduate and undergraduate students involved in this project will gain experience in device fabrication, testing and modeling. Students will be part of research activities that can impact the national goals of renewable energy.The IMB approach relies on the adhesion properties of indium (In) metal. Indium films will be deposited on the existing grid contacts of various solar cells. Bonding between the cells will take place by applying pressure at room temperature, resulting in In-metal bonding between the two cells. The research program will focus on the development of the IMB technique, aligning the bottom contact of the top cell and top contact of the bottom cells, finding the optimum conditions for both mechanical strength and a low resistance connecting junction with minimum shadowing losses. We will investigate MJ structures from off-the-shelf bottom cells [Si (1.1 eV) or CIGS (1.0 eV)] and epitaxially grown junctions from the PI's lab for the top cell based on InGaP/multiple quantum well structures or AlGaAs to tune the band gap between 1.55 and 1.7 eV. The above combinations can approach efficiencies close to 30%, in a two terminal device structure. We have successfully applied the IMB technique to bond GaAs/InGaP and Si/GaAs showing both mechanical stability and electrical conductivity. We have shown that the IMB offers a very low resistivity interconnects and was successfully applied to demonstrate the proof of concept in the case of GaAs/Si tandem cell.

ECCS-1665211Bedair，S.M.北卡罗来纳州立大学EAGER：两种不同材料系统的串联太阳能电池摘要串联太阳能电池是一种能够实现高于 45% 转换效率的方法。这种方法涉及堆叠多个具有不同特性的电池，以实现太阳光谱的最佳利用。目前，所有卫星和空间通信系统均由串联太阳能电池结构供电。然而，这些结构受到一些限制，例如成本和材料相关问题。因此，它们无法竞争地面应用，而地面应用目前由硅和廉价电池技术主导，效率低于 20%。该 EAGER 项目的目标是开发科学技术，将高效串联电池概念应用于由廉价材料系统制成的电池。我们提出了一种新方法，依靠金属间键合（IMB）将两个或多个可能由不同材料系统组成的电池组装成串联电池结构。 这种 IMB 方法可以影响多个不同领域，例如发射不同波长的 LED 和双波长光电探测器。参与该项目的研究生和本科生将获得设备制造、测试和建模方面的经验。学生将参与影响国家可再生能源目标的研究活动。IMB 方法依赖于铟 (In) 金属的粘合特性。铟膜将沉积在各种太阳能电池的现有栅极触点上。电池之间的粘合将通过在室温下施加压力来进行，从而在两个电池之间形成金属内粘合。 该研究计划将重点开发IMB技术，对齐顶部电池的底部接触和底部电池的顶部接触，找到机械强度和低电阻连接结的最佳条件，并具有最小的遮蔽损耗。我们将研究来自现成底部电池 [Si (1.1 eV) 或 CIGS (1.0 eV)] 的 MJ 结构，以及来自 PI 实验室的基于 InGaP/多量子阱结构或 AlGaAs 的顶部电池外延生长结，以将带隙调整在 1.55 和 1.7 eV 之间。 在两端器件结构中，上述组合可实现接近 30% 的效率。我们已成功应用 IMB 技术键合 GaAs/InGaP 和 Si/GaAs，显示出机械稳定性和导电性。我们已经证明，IMB 提供了非常低的电阻率互连，并成功应用于演示 GaAs/Si 串联电池的概念验证。

项目成果

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

使用 In0.12Ga0.88N 松弛模板将 LED 发射从蓝色间隙光谱范围转变为绿色间隙光谱范围

• DOI: 10.1016/j.spmi.2021.107065
• 发表时间: 2021
• 期刊: Superlattices and Microstructures
• 影响因子: 3.1
• 作者: Abdelhamid, Mostafa;Routh, Evyn L.;Shaker, Ahmed;Bedair, S.M.
• 通讯作者: Bedair, S.M.

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

• DOI: 10.1088/1361-6641/ac6d01
• 发表时间: 2022-05
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: E. L. Routh;M. Abdelhamid;P. Colter;A. J. Bonner;N. El-Masry;S. Bedair

Improved LED output power and external quantum efficiency using InGaN templates

使用 InGaN 模板提高 LED 输出功率和外部量子效率

• DOI: 10.1063/5.0084273
• 发表时间: 2022
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Abdelhamid, Mostafa;Routh, Evyn L.;Hagar, Brandon;Bedair, S. M.
• 通讯作者: Bedair, S. M.

Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon

• DOI: 10.1007/s11837-020-04421-z
• 发表时间: 2020-10
• 期刊: JOM
• 影响因子: 2.6
• 作者: K. Khafagy;T. Hatem;S. Bedair

P-type In x Ga 1−x N semibulk templates (0.02 19 cm −3 and device quality surface morphology

P型In x Ga 1×N半块状模板（0.02 19 cm×3和器件质量表面形貌

• DOI: 10.1063/5.0065194
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Routh, Evyn L.;Abdelhamid, Mostafa;Colter, Peter;El-Masry, N. A.;Bedair, S. M.
• 通讯作者: Bedair, S. M.