Deep Levels in Semiconductors by Microprobe X-Ray Fluorescence and X-Ray Excited Luminescence

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Experimental studies on the characterization of impurities, particularly those that form deep levels, in II-VI and other semiconductors by advanced X-ray techniques are being conducted. The principal goal of the research is to obtain a direct correlation of the luminescent properties of wide bandgap semiconductors and local concentration of specific impurities. Although remarkable results have recently been obtained for blue- emitting laser heterjunction diodes based on ZnSe, the role of impurities in limiting the maximum carrier concentration of p-type ZnSe is not understood, and it is expected that the results of this research will be of significant benefit to the understanding and improvement of II-VI materials, in general, as well as other semiconductors. %%% This research is expected to aid in finding solutions for several problems and to contribute to the understanding of outstanding issues in II-VI materials related to impurities at low concentrations which adversely affect fundamental radiative processes determining the feasibility and efficiency of optoelectronic devices such as lasers and light emitting diodes(LED). Understanding the fundamental nature of the influence of ultra-low levels of impurities in these materials will contribute toward the realization of improved optoelectronic devices operating in the blue spectral region.