Fabrication of Field Emitter Arrays for Vacuum Devices

真空器件场发射体阵列的制造

• 批准号: 9209740
• 负责人: Stella Pang
• 金额: $ 7万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-01 至 1996-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9209740&HistoricalAwards=false
• 关键词: Fabrication; Field; Emitter; Arrays; Vacuum

9209740 PANG Vacuum devices, although still in the development stage, have already show significantly promise in a number of applications. Besides being able to operated at very high frequency and immune to radiation, it has been recently demonstrated as a product for flat panel display in France. One of the major drawbacks for vacuum devices is related to the fabrication technology. A number of issues have yet to be resolved before the devices can achieve its full potential. The emitters properties including their electrical, thermal, mechanical stability are often not optimized. To improve the performance of these devices, alternative materials and new fabrication technology have to be developed. In this project, field emitter arrays for vacuum devices will be fabricated. Two new materials will be tested as emitters, including WSi2 and InP. For Wsi2 emitters, it will be formed by either sintering W deposited on Si emitters or by patterning WSi2 that is deposited directly on the substrate. High resolution patterning techniques including electron beam and masked ion beam lithography will be used to define emitters with submicrometer dimensions in resist. Wet chemical etching and dry etching techniques will be for generating vertical profiles for the emitters. The emitter tips will be sharpened by various dry etching conditions after the vertical emitters are formed, including faceting, undercutting, mask erosion, and dopant dependent dry etching. In order for the vacuum devices to be operational in air, a sealed triode structure will be fabricated using double angle evaporation. ***

9209740庞氏真空设备虽然仍处于开发阶段，但已经在许多应用中显示出巨大的前景。除了能够以非常高的频率运行并不受辐射影响外，它最近还在法国作为一种平板显示器产品进行了演示。真空器件的主要缺点之一是与制造技术有关。在这些设备充分发挥其潜力之前，还有许多问题需要解决。发射器的性能，包括其电、热、机械稳定性，往往没有得到优化。为了提高这些器件的性能，必须开发替代材料和新的制造技术。在这个项目中，将制作用于真空器件的场发射极阵列。两种新材料将作为发射体进行测试，包括WSi2和InP。对于WSi2发射体，它将通过烧结沉积在硅发射体上的W或通过将直接沉积在衬底上的WSi2图案化来形成。包括电子束和掩蔽离子束光刻在内的高分辨率图案化技术将被用于在抗蚀剂中定义亚微米尺寸的发射体。湿法化学蚀刻和干法蚀刻技术将用于产生发射器的垂直轮廓。在垂直发射极形成后，发射极尖端将通过各种干法刻蚀条件进行锐化，包括刻面、底切、掩模腐蚀和依赖于掺杂剂的干法刻蚀。为了使真空器件在空气中工作，将使用双角蒸发制作密封的三极管结构。***