Fabrication of Field Emitter Arrays for Vacuum Devices

9209740 PANG真空器件虽然仍处于开发阶段，但已在许多应用中显示出显著的前景。 除了能够在非常高的频率下工作和抗辐射外，它最近还被证明是法国平板显示器的产品。 真空器件的主要缺点之一与制造技术有关。 在这些设备能够充分发挥其潜力之前，还有一些问题有待解决。 发射体的性质，包括它们的电、热、机械稳定性，通常没有被优化。 为了提高这些器件的性能，必须开发替代材料和新的制造技术。 在本计画中，将制作真空装置的场致发射阵列。 两种新材料将作为发射体进行测试，包括WSi 2和InP。 对于WSi 2发射极，其将通过烧结沉积在Si发射极上的W或通过图案化直接沉积在衬底上的WSi 2来形成。 包括电子束和掩模离子束光刻的高分辨率图案化技术将用于在抗蚀剂中限定具有亚微米尺寸的发射器。 湿化学蚀刻和干蚀刻技术将用于产生发射极的垂直轮廓。 在形成垂直发射极之后，发射极尖端将通过各种干法蚀刻条件（包括刻面、底切、掩模侵蚀和掺杂剂依赖性干法蚀刻）而变尖。 为了使真空器件能够在空气中工作，将使用双角蒸发制造密封的MEMS结构。 ***

9209740 PANG Vacuum devices, although still in the development stage, have already show significantly promise in a number of applications. Besides being able to operated at very high frequency and immune to radiation, it has been recently demonstrated as a product for flat panel display in France. One of the major drawbacks for vacuum devices is related to the fabrication technology. A number of issues have yet to be resolved before the devices can achieve its full potential. The emitters properties including their electrical, thermal, mechanical stability are often not optimized. To improve the performance of these devices, alternative materials and new fabrication technology have to be developed. In this project, field emitter arrays for vacuum devices will be fabricated. Two new materials will be tested as emitters, including WSi2 and InP. For Wsi2 emitters, it will be formed by either sintering W deposited on Si emitters or by patterning WSi2 that is deposited directly on the substrate. High resolution patterning techniques including electron beam and masked ion beam lithography will be used to define emitters with submicrometer dimensions in resist. Wet chemical etching and dry etching techniques will be for generating vertical profiles for the emitters. The emitter tips will be sharpened by various dry etching conditions after the vertical emitters are formed, including faceting, undercutting, mask erosion, and dopant dependent dry etching. In order for the vacuum devices to be operational in air, a sealed triode structure will be fabricated using double angle evaporation. ***