Effects of Surface Structure on Ordering in III/V Systems
Effects of Surface Structure on Ordering in III/V Systems
批准号:
9320541
负责人:
Gerald Stringfellow
金额:
$29.31万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-06-15 至 1998-05-31
中文摘要
小行星9320541 拟议的研究解决了基本的表面过程相关的原子尺度有序的III-V族半导体合金在外延生长。 这种有序化现象最近才被发现,并且具有很大的基本兴趣,因为有序化被认为与生长期间发生的表面过程密切相关,并且因为有序化改变了基本的材料性质,例如无序合金的带隙。 最近的工作表明,表面重构和表面上的步骤的运动控制的有序化过程。不幸的是,许多导致有序模型的观察是间接的。 拟议的研究试图直接关联的表面特征,如重建和步骤,以订购,并同时监测所得材料的光学和电学性能。 %目前,对气相外延晶体生长过程中的表面结构的详细了解通常很差。所提出的研究将显着有利于我们的基本理解,控制,并提高外延生长工艺的一般能力。 这项研究也具有重要的技术相关性;这项研究的结果预计将以各种方式在开发和实现先进的电子和光子器件概念方面发挥作用。 这将可能是有用的实现光子和载流子的限制,并有意减少红外光子器件的能带隙。有序化也有望通过消除合金散射来增强自由载流子迁移率。 该研究预计将对电信,信息处理和高速计算的一般领域产生积极影响。 ***
英文摘要
9320541 Stringfellow The proposed research addresses fundamental surface processes related to atomic scale ordering in III-V semiconductor alloys during epitaxial growth. This ordering phenomenon has only recently been discovered, and is of great basic interest since ordering is thought to be intimately connected with the surface processes occurring during growth, and because ordering changes fundamental materials properties such as the band gap of the disordered alloy. Recent work has indicated that surface reconstruction and the motion of steps on the surface control the ordering process. Unfortunately, many of the observations leading to the ordering models are indirect. The proposed research attempts to directly relate surface features such as reconstruction and steps to ordering, and to simultaneously monitor optical and electrical properties of the resulting material. %%% At present, detailed understanding of the surface structure during vapor phase epitaxial crystal growth is generally poor. The proposed research will significantly benefit our basic understanding, control, and general ability to improve epitaxial growth processes. The research also has significant technological relevance; results from this research are expected to be useful in a variety of ways in developing and bringing advanced electronic and photonic device concepts to fruition. It will likely be useful for achieving photon and carrier confinement, and for the intentional reduction of the energy band gap for infrared photonic devices. Ordering is also expected to lead to enhancement of free carrier mobilities by eliminating alloy scattering. The research is expected to have a positive impact on the general areas of telecommunications, information processing; and high speed computing. ***
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Acquisition of a Regional-use Surface Analysis System
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批准号:0443657
-
项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Gerald Stringfellow
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依托单位:
Effects of Surface Structure on Ordering in III/V Systems
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批准号:9704576
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项目类别:Continuing Grant
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资助金额:$31.07万
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财政年份:1997
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负责人:Gerald Stringfellow
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依托单位:
U.S.-Japan Seminar: Atomic Scale Mechanisms of Epitaxial Growth/May 8-15, 1995/Honolulu, Hawaii
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批准号:9415261
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项目类别:Standard Grant
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资助金额:$1.5万
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财政年份:1995
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负责人:Gerald Stringfellow
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依托单位:
U.S.-Japan Joint Seminar: Alloy Semiconductor Physics and Electronics / Honolulu, Hawaii / May 1988
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批准号:8715857
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项目类别:Standard Grant
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资助金额:$1.13万
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财政年份:1988
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负责人:Gerald Stringfellow
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依托单位:
国内基金
海外基金
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