Effects of Surface Structure on Ordering in III/V Systems

表面结构对 III/V 系统有序性的影响

• 批准号: 9320541
• 负责人: Gerald Stringfellow
• 金额: $ 29.31万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-06-15 至 1998-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9320541&HistoricalAwards=false
• 关键词: Effects; Surface; Structure; Ordering; III

9320541 Stringfellow The proposed research addresses fundamental surface processes related to atomic scale ordering in III-V semiconductor alloys during epitaxial growth. This ordering phenomenon has only recently been discovered, and is of great basic interest since ordering is thought to be intimately connected with the surface processes occurring during growth, and because ordering changes fundamental materials properties such as the band gap of the disordered alloy. Recent work has indicated that surface reconstruction and the motion of steps on the surface control the ordering process. Unfortunately, many of the observations leading to the ordering models are indirect. The proposed research attempts to directly relate surface features such as reconstruction and steps to ordering, and to simultaneously monitor optical and electrical properties of the resulting material. %%% At present, detailed understanding of the surface structure during vapor phase epitaxial crystal growth is generally poor. The proposed research will significantly benefit our basic understanding, control, and general ability to improve epitaxial growth processes. The research also has significant technological relevance; results from this research are expected to be useful in a variety of ways in developing and bringing advanced electronic and photonic device concepts to fruition. It will likely be useful for achieving photon and carrier confinement, and for the intentional reduction of the energy band gap for infrared photonic devices. Ordering is also expected to lead to enhancement of free carrier mobilities by eliminating alloy scattering. The research is expected to have a positive impact on the general areas of telecommunications, information processing; and high speed computing. ***

9320541 Stringfellow 拟议的研究涉及与外延生长过程中 III-V 族半导体合金的原子级有序相关的基本表面过程。 这种有序现象最近才被发现，并且具有很大的基础意义，因为有序被认为与生长过程中发生的表面过程密切相关，并且因为有序改变了基本的材料特性，例如无序合金的带隙。 最近的工作表明，表面重建和表面上台阶的运动控制着排序过程。不幸的是，导致排序模型的许多观察都是间接的。 拟议的研究试图将重建和排序步骤等表面特征直接联系起来，并同时监测所得材料的光学和电学特性。 %%% 目前，对气相外延晶体生长过程中表面结构的详细了解普遍较差。拟议的研究将极大地有益于我们改善外延生长工艺的基本理解、控制和一般能力。 该研究还具有重要的技术相关性；这项研究的结果预计将以多种方式用于开发和实现先进的电子和光子器件概念。 它可能有助于实现光子和载流子限制，以及有意减小红外光子器件的能带隙。有序化还有望通过消除合金散射来增强自由载流子迁移率。 该研究预计将对电信、信息处理等一般领域产生积极影响；和高速计算。 ***