Acquisition of a Variable-Temperature Scanning Tunneling Microscope Facility for Electronic Material and Nano- Device Design

购置用于电子材料和纳米器件设计的变温扫描隧道显微镜设备

• 批准号: 9413999
• 负责人: Joseph Templeton
• 金额: $ 15.39万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9413999&HistoricalAwards=false
• 关键词: Acquisition; Variable; Temperature; Scanning; Tunneling

A variable-temperature scanning tunneling microscope (STM) with the capability of studying the chemistry of electronic material design and its application to nano-device fabrication will be acquired with the Academic Research Infrastructure Program funds. The JEOL STM instrument will operate between 30K and 1500K. The research will emphasize deposition and growth reactions involving silanes and chlorosilanes in an effort to elucidate the role of hydrogen and chlorine atoms produced by the growth precursors. The variable-temperature capability will play an important role in the study of adsorption, diffusion and growth reactions. The catalytic role of atomic hydrogen in promoting ordered crystalline growth in electronic materials. Various approaches will be considered in efforts to fabricate controllably doped diode nanostructures and quantum dots. A variable-temperature scanning tunneling microscope will be utilized in the study of the chemistry of electronic material design and its application to nanoscale device fabrication. The role of atomic hydrogen and chlorine in the growth processes will be studied. Adsorption, diffusion, and growth reaction studies will be carried out versus temperature. Efforts will be made to fabricate nanoscale devices.

在学术研究基础设施计划的资助下，将获得一台具有研究电子材料化学设计及其在纳米器件制造中应用的变温扫描隧道显微镜(STM)的能力。JEOL STM仪器将在30K到1500K之间工作。这项研究将侧重于硅烷和氯硅烷的沉积和生长反应，以努力阐明生长前体产生的氢和氯原子的作用。变温能力将在吸附、扩散和生长反应的研究中发挥重要作用。原子氢在促进电子材料有序晶体生长中的催化作用。在努力制造可控掺杂的二极管纳米结构和量子点时，将考虑各种方法。变温扫描隧道显微镜将用于研究电子材料设计的化学及其在纳米器件制造中的应用。将研究氢原子和氯原子在生长过程中的作用。将进行吸附、扩散和生长反应随温度变化的研究。将努力制造纳米级器件。