Development of an In Situ Growth and Analysis Chamber for X-Ray Scattering Experiments at the Advanced Photon Source

开发用于先进光子源 X 射线散射实验的原位生长和分析室

• 批准号: 9414013
• 负责人: Paul Miceli
• 金额: $ 28.73万
• 依托单位: University of Missouri-Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-01 至 2001-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9414013&HistoricalAwards=false
• 关键词: Development; Situ; Growth; Analysis; Chamber

9503708 Zaslavsky The addition of this processing extension equipment will enable new research in nanostructure fabrication by regrowth and in the transport, optical properties, and device physics of novel nanostructures. This processing extension will permit regrowth of modulation-doping, contacting and isolating layers on patterned heterostructures prepared with in-situ etched and clearned regrowth surfaces. The processing extension will have the following capabilities: low-damage electron-cyclotron resonance (ECR) plasma reactive ion etching of III-V semiconductors; ECR hydrogen plasma cleaning of etched substrates; surface cleanliness monitoring by Auger spectroscopy; and in-vacuum transfer of patterned substrates into the MBE growth chamber. The properties of strained and unstrained uniform quantum wires fabricated by etching through quantum wells and regrowth with modulation-doping layers on the sidewalls will be studied. A heavily-doped gate electrode layer in the regrowth sequence will permit carrier density modulation in these wires independent of the confining potentials determined by the original heterostructure. Analogously, by pregrowing the appropriate barrier potentials, gated 2- dimensional tunneling structures and superlattices in III-V heterostructures will be fabricated and their transport and optical properties will be investigated down to the quantum dot limit. % This equipment will be used by a group of investigators having complimentary expertise ranging from semiconductor epitaxial growth to nanofabrication and from transport and optical characterization to device physics and engineering. It represents fundamental materials research important for understanding processing of semiconductor materials, and is ultimately relevant for manufacturing.

这种加工延伸设备的增加将使再生纳米结构制造以及新型纳米结构的传输、光学性质和器件物理方面的新研究成为可能。这种加工扩展将允许调制掺杂的再生，在原位蚀刻和清理再生表面制备的图图化异质结构上接触和隔离层。加工扩展将具有以下能力：III-V半导体的低损伤电子回旋共振（ECR）等离子体反应离子蚀刻；ECR氢等离子体清洗蚀刻基底俄歇光谱法监测表面清洁度；以及将图案基板在真空中转移到MBE生长室。研究了通过量子阱刻蚀和边壁有调制掺杂层的再生制备的应变和非应变均匀量子线的性能。在再生序列中，重掺杂的栅电极层将允许这些导线中的载流子密度调制独立于由原始异质结构决定的限制电位。类似地，通过预生长适当的势垒势，将制备III-V异质结构中的门控二维隧道结构和超晶格，并将研究它们在量子点极限下的输运和光学性质。该设备将由一组具有互补专业知识的研究人员使用，从半导体外延生长到纳米制造，从传输和光学表征到设备物理和工程。它代表了对理解半导体材料加工的重要基础材料研究，并最终与制造相关。