MRI: Development of an Integrated Thin Film Growth System with Comprehensive In-situ Characterization for Research and Education

MRI：开发具有综合原位表征的集成薄膜生长系统，用于研究和教育

• 批准号: 0421028
• 负责人: Yves Chabal
• 金额: $ 38万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-08-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0421028&HistoricalAwards=false
• 关键词: MRI; Development; Integrated; Thin; Film

This is an instrument development award from the Major Research Instrumentation program to Rutgers University New Brunswick. A large-scale, integrated instrument will be developed, which combines atomic layer deposition (ALD) growth and UHV preparation chambers with a unique array of characterization techniques, including medium energy ion scattering (MEIS), infrared absorption spectroscopy (IRAS), scanning probe microscopy, as well as more conventional surface probes. This instrument will significantly advance the forefront of materials synthesis by coupling a promising and novel growth technique for a wide range of materials with the in-situ characterization needed to identify, understand, and ultimately tailor the key aspects of the growth process. It will directly benefit research spanning the range from microelectronics to quantum confinement. It will also play a key role in initiating collaborative work and exposing students to a wide variety of techniques and industrial applications. In particular, it will be the centerpiece of a recently NSF-funded IGERT program on engineering bio-interfaces and various other interdisciplinary programs at Rutgers. As devices become smaller, there is a need to develop growth techniques to deposit one atomic layer at a time, to check that this is done in a very uniform manner, and to do so over large, patterned areas. A unique instrument will be developed that incorporates a process where atoms can be deposited onto semiconductor surfaces very uniformly, one layer at a time, and sophisticated techniques that make it possible to "see" each layer of atoms individually. The growth technique is based on vapors reaction with surfaces, but tailored to limit the deposition to only one atomic layer per pass. The instrument will make it possible to make transistors and other devices with a precision that was not possible before and to understand how each layer is formed. Students will be trained on this state-of-the-art instrument and interact with and interdisciplinary team of scientists from the fields of physics, chemistry, material science, electrical and biomedical engineering.

这是罗格斯大学新玩法的主要研究仪器计划的仪器开发奖。将开发一种大规模的集成仪器，它将原子层沉积（ALD）生长和UHV制备室与一系列独特的表征技术相结合，包括中能离子散射（MEIS），红外吸收光谱（IRAS），扫描探针显微镜以及更传统的表面探针。 该仪器将显著推进材料合成的最前沿，通过将一种有前途的新型生长技术与识别、理解并最终定制生长过程的关键方面所需的原位表征相结合，用于各种材料。它将直接有利于从微电子学到量子限制的研究。它还将在启动协作工作和让学生接触各种技术和工业应用方面发挥关键作用。特别是，它将成为最近NSF资助的IGERT工程生物界面计划和罗格斯大学其他各种跨学科计划的核心。随着器件变得越来越小，需要开发一次存款一个原子层的生长技术，以检查这是以非常均匀的方式完成的，并且在大的图案化区域上这样做。 将开发一种独特的仪器，它结合了一种工艺，在这种工艺中，原子可以非常均匀地沉积在半导体表面上，一次一层，以及复杂的技术，使人们有可能单独“看到”每一层原子。生长技术是基于与表面的蒸汽反应，但被定制为将沉积限制为每次通过仅一个原子层。该仪器将使制造晶体管和其他器件的精度达到以前不可能的水平，并了解每一层是如何形成的。 学生将接受这种最先进的仪器的培训，并与来自物理，化学，材料科学，电气和生物医学工程领域的跨学科科学家团队进行互动。