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MRI: Development of an Integrated Thin Film Growth System with Comprehensive In-situ Characterization for Research and Education

MRI: Development of an Integrated Thin Film Growth System with Comprehensive In-situ Characterization for Research and Education
MRI:开发具有综合原位表征的集成薄膜生长系统,用于研究和教育
批准号:
0421028
负责人:
Yves Chabal
金额:
$38.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-01 至 2007-07-31

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中文摘要
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英文摘要
This is an instrument development award from the Major Research Instrumentation program to Rutgers University New Brunswick. A large-scale, integrated instrument will be developed, which combines atomic layer deposition (ALD) growth and UHV preparation chambers with a unique array of characterization techniques, including medium energy ion scattering (MEIS), infrared absorption spectroscopy (IRAS), scanning probe microscopy, as well as more conventional surface probes. This instrument will significantly advance the forefront of materials synthesis by coupling a promising and novel growth technique for a wide range of materials with the in-situ characterization needed to identify, understand, and ultimately tailor the key aspects of the growth process. It will directly benefit research spanning the range from microelectronics to quantum confinement. It will also play a key role in initiating collaborative work and exposing students to a wide variety of techniques and industrial applications. In particular, it will be the centerpiece of a recently NSF-funded IGERT program on engineering bio-interfaces and various other interdisciplinary programs at Rutgers. As devices become smaller, there is a need to develop growth techniques to deposit one atomic layer at a time, to check that this is done in a very uniform manner, and to do so over large, patterned areas. A unique instrument will be developed that incorporates a process where atoms can be deposited onto semiconductor surfaces very uniformly, one layer at a time, and sophisticated techniques that make it possible to "see" each layer of atoms individually. The growth technique is based on vapors reaction with surfaces, but tailored to limit the deposition to only one atomic layer per pass. The instrument will make it possible to make transistors and other devices with a precision that was not possible before and to understand how each layer is formed. Students will be trained on this state-of-the-art instrument and interact with and interdisciplinary team of scientists from the fields of physics, chemistry, material science, electrical and biomedical engineering.
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Materials World Network, SusChEM: Control of Interfacial Chemistry in Reactive Nanolaminates (CIREN)
  • 批准号:
    1312525
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.6万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
  • 依托单位:
Role of structure in chemical functionalization of oxide-free silicon surfaces and nanoparticles
  • 批准号:
    1300180
  • 项目类别:
    Standard Grant
  • 资助金额:
    $38.37万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
  • 依托单位:
AIR Option 1: Tech Translation - Ultrananocrystalline Diamond Coating Tech for Integrated Electrode-Membrane-Inner Wall Case Coating for Long Life Commercial Li-Sulfur Battery
  • 批准号:
    1343461
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
  • 依托单位:
Surface Chemical Functionalization of Semiconductors and Nanostructures
  • 批准号:
    0911197
  • 项目类别:
    Standard Grant
  • 资助金额:
    $36.52万
  • 财政年份:
    2009
  • 负责人:
    Yves Chabal
  • 依托单位:
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: