MOCVD Precursors to Binary and Ternary Transition Metal Nitrides

二元和三元过渡金属氮化物的 MOCVD 前驱体

• 批准号: 9510712
• 负责人: Charles Winter
• 金额: $ 25.6万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9510712&HistoricalAwards=false
• 关键词: MOCVD; Precursors; Binary; Ternary; Transition

This award is made by the Office of Special Projects in the Chemistry Division. The research will explore the range of ligand intermediates that may be formed in Chemical Vapor Deposition (CVD) of thin films of important binary and ternary metal nitrides with the formula MN, where M is an early transition metal. CVD routes will be developed using volatile metal halides and nitrogen compounds. A major goal of the work is to identify structures that serve as single-source precursors and to try to understand the chemistry involved in their transformations to binary materials. All new compounds will be characterized by various analytical and spectroscopic techniques. Among the systems to be studied are precursors with hydrazido ligands, monomeric titanium nitrido complexes, amorphous titanium-silicon-nitrogen and tantalum-silicon-nitrogen films as barriers in microelectronics devices, and CVD routes to ternary metal nitrides, which possess properties superior to those of the binary materials. %%% Thin ceramic films made by CVD processes are of growing technological importance. Films of early transition metal nitrides of the type studied in this project possess a number of useful properties, including extreme hardness, excellent chemical resistance, desirable optical characteristics, and good electrical conductivity. The research supported in this project will lead to new precursors and processes for CVD which will solve problems with current methods, such as high deposition temperatures, and will develop paths to new ternary metal nitrides for which no CVD routes are currently available.

该奖项由化学司特别项目办公室颁发。该研究将探索化学气相沉积（CVD）中可能形成的配体中间体的范围，其中M是早期过渡金属，其公式为MN。将开发利用挥发性金属卤化物和氮化合物的CVD路线。这项工作的一个主要目标是确定作为单源前体的结构，并试图理解它们转化为二元材料所涉及的化学过程。所有新化合物都将通过各种分析和光谱技术进行表征。研究的体系包括以肼配体为前驱体、单体氮化钛配合物、非晶钛-硅-氮和钽-硅-氮薄膜作为微电子器件的屏障，以及具有优于二元材料性能的三元金属氮化物的CVD途径。CVD法制备的陶瓷薄膜在技术上具有日益重要的意义。本项目研究的早期过渡金属氮化物薄膜具有许多有用的特性，包括极高的硬度、优异的耐化学性、理想的光学特性和良好的导电性。该项目支持的研究将导致CVD的新前体和工艺，这将解决当前方法存在的问题，例如高沉积温度，并将开发目前没有CVD路线的新型三元金属氮化物的途径。