Ligand Intermediates in Early Transition Metal CVD Processes

该奖项由特别项目办公室颁发， 材料合成与加工化学部 倡议该研究将探索配体的范围 可以在薄膜沉积中形成的中间体 二元前过渡金属氧化物、硫化物和氮化物。 化学气相沉积（CVD）薄膜的途径将是 使用挥发性金属卤化物和有机氧， 氮和硫的化合物。的配位化学 四氯化钛、锆和铪与醇， 胺和硫醇将进行研究，以获得更深的 了解可能存在的配体集合的类型 在成膜过程中产生。 将准备复合物 在溶液相和气相反应中， 了解这些潜在的分歧之间的关系 流程. 所有稳定的复合物将被评价为CVD 前体每种材料的机械顺序 从起始材料到薄膜将被开发。 %%% CVD法制备的陶瓷薄膜具有生长速度快、 技术重要性。 配体中间体的范围 可以在金属上支撑的金属将说明广泛的 CVD的原理可应用于其他薄膜沉积 大大提高了化学预测性。

This award is made by the Office of Special Projects in the Chemistry Division under the Materials Synthesis and Processing Initiative. The research will explore the range of ligand intermediates that may be formed in thin film depositions of binary early transition metal oxides, sulfides and nitrides. Chemical Vapor Deposition (CVD) routes to thin films will be developed using volatile metal halides and organic oxygen, nitrogen and sulphur compounds. The coordination chemistry of titanium, zirconium and hafnium tetrachlorides with alcohols, amines and thiols will be investigated to gain a deeper understanding of the types of ligand ensembles that may be produced in film-forming processes. Complexes will be prepared in both solution phase and gas phase reactions in order to understand the relationship between these potentially divergent processes. All stable complexes will be evaluated as CVD precursors. A mechanistic sequence for each material that leads from starting materials to the thin film will be developed. %%% Thin ceramic films made by CVD processes are of growing technological importance. The range of ligand intermediates that can be supported at a metal will illustrate broad principles of CVD that can be applied to other film depositions and greatly enhance chemical predictability.