Ligand Intermediates in Early Transition Metal CVD Processes

该奖项由材料合成和加工倡议下的化学部门特别项目办公室颁发。该研究将探索在二元早期过渡金属氧化物、硫化物和氮化物的薄膜沉积中可能形成的配体中间体的范围。化学气相沉积（CVD）的薄膜路线将开发使用挥发性金属卤化物和有机氧，氮和硫化合物。将研究四氯化钛、锆和四氯化铪与醇、胺和硫醇的配位化学，以更深入地了解在成膜过程中可能产生的配体组合的类型。配合物将在溶液相和气相反应中制备，以便了解这些潜在的不同过程之间的关系。所有稳定的配合物将被评价为CVD前体。每一种材料从原始材料到薄膜的机械顺序将被开发出来。CVD法制备的陶瓷薄膜在技术上具有日益重要的意义。可以在金属上支持的配体中间体的范围将说明CVD的广泛原理，可以应用于其他薄膜沉积，并大大提高化学可预测性。

This award is made by the Office of Special Projects in the Chemistry Division under the Materials Synthesis and Processing Initiative. The research will explore the range of ligand intermediates that may be formed in thin film depositions of binary early transition metal oxides, sulfides and nitrides. Chemical Vapor Deposition (CVD) routes to thin films will be developed using volatile metal halides and organic oxygen, nitrogen and sulphur compounds. The coordination chemistry of titanium, zirconium and hafnium tetrachlorides with alcohols, amines and thiols will be investigated to gain a deeper understanding of the types of ligand ensembles that may be produced in film-forming processes. Complexes will be prepared in both solution phase and gas phase reactions in order to understand the relationship between these potentially divergent processes. All stable complexes will be evaluated as CVD precursors. A mechanistic sequence for each material that leads from starting materials to the thin film will be developed. %%% Thin ceramic films made by CVD processes are of growing technological importance. The range of ligand intermediates that can be supported at a metal will illustrate broad principles of CVD that can be applied to other film depositions and greatly enhance chemical predictability.