Precursors and Processes for Tantalum Nitride and Related Thin Film Materials

氮化钽及相关薄膜材料的前驱体和工艺

• 批准号: 9807269
• 负责人: Charles Winter
• 金额: $ 41.8万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-08-15 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9807269&HistoricalAwards=false
• 关键词: Precursors; Processes; Tantalum; Nitride; Related

This award to Prof. Charles Winter at Wayne State University is supported by the Advanced Materials and Processing Program in the Chemistry Division. The research will focus on new precursors and processes for tantalum nitride and related thin film materials. New low temperature routes to binary and ternary transition metal nitrides of tantalum, niobium, zirconium and hafnium will be developed with particular emphasis on tantalum nitride thin films. Specific objectives are: (1) synthesis and characterization of tantalum complexes with a range of nitrogen-containing ligands such as alkyl hydrazines, 1,3-diaryltriazines, pyrazoles, 1,2,4-triazoles and tetrazoles as single source precursors for nitrides; (2)examination of chemical vapor deposition reactions of the nitrogen ligands and tantalum (V) source compounds as low temperature routes to nitride films; (3) development of ternary tantalum-silicon nitrides by addition of volatile silicon sources; and, (4) extension of the tantalum technology to other early transition metal nitrides. Nitride films will be characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and Rutherford back-scattering. Nitride thin films are recognized for a wide range of important properties including hardness, chemical resistance, electrical conductivity and desirable optical properties. Currently, nitride films are made by high temperature sputtering. The early transition metal nitrides studied in this research will be prepared by low temperature chemical vapor deposition and will impact the development of barrier materials for microelectronic applications, particularly between silicon and copper substrates in integrated circuits. The synthetic chemistry of single source precursors will also lead to new early transition metal complexes of fundamental interest to structural inorganic chemistry.

这项授予韦恩州立大学查尔斯·温特教授的奖项得到了化学部先进材料和加工计划的支持。研究将集中在氮化钽及其相关薄膜材料的新的前体和工艺上。Ta、Nb、Z和Hf等二元和三元过渡金属氮化物的低温新途径将被开发出来，特别是Ta-N薄膜。具体目标是：(1)合成和表征作为氮化物单一来源前体的一系列含氮配体，如烷基肼、1，3-二芳基三氮嗪、吡唑、1，2，4-三氮唑和四唑；(2)研究氮配体和钽(V)源化合物作为氮化物薄膜低温途径的化学气相沉积反应；(3)通过添加挥发性硅源开发三元钽硅氮化物；以及(4)将钽技术扩展到其他早期过渡金属氮化物。氮化物薄膜将用x射线衍射、x射线光电子能谱、扫描电子显微镜和卢瑟福背散射进行表征。氮化物薄膜具有广泛的重要性能，包括硬度、耐化学性、导电性和理想的光学性能。目前，氮化物薄膜是通过高温溅射的方法制备的。本研究中研究的早期过渡金属氮化物将采用低温化学气相沉积的方法制备，这将影响微电子应用的势垒材料的发展，特别是集成电路中硅和铜衬底之间的势垒材料。单源前体的合成化学也将导致新的早期过渡金属配合物，这是结构无机化学的基本兴趣。