Precursors and Processes for Tantalum Nitride and Related Thin Film Materials

本奖项授予韦恩州立大学的查尔斯温特教授， 高级材料与加工计划（Advanced Materials and Processing Program in Chemistry） 师.该研究将侧重于新的前体和工艺， 氮化钽和相关的薄膜材料。新低温 钽的二元和三元过渡金属氮化物的路线， 铌、锆和铪的开发将特别重视 在氮化钽薄膜上。 具体目标是：（1）综合 和表征的钽络合物的范围内， 含氮配体如烷基肼， 1，3-二芳基三嗪、吡唑、1，2，4-三唑和四唑作为单 氮化物的源前体;（2）化学蒸气的检查 氮配体和钽（V）源的沉积反应 化合物作为氮化膜的低温途径;（3） 添加挥发性硅的三元钽硅氮化物 （4）钽技术向其他早期的钽技术的延伸 过渡金属氮化物。 氮化物薄膜将通过x射线表征 衍射，x射线光电子能谱，扫描电子 显微镜和卢瑟福背散射。 氮化物薄膜被公认为具有广泛的重要用途， 包括硬度、耐化学性、电性能 导电性和所需的光学性质。目前，氮化物薄膜 通过高温溅射制成。早期过渡金属 本研究中的氮化物材料将采用低温合成方法， 化学气相沉积将影响阻挡层的发展 用于微电子应用的材料，特别是在硅和硅之间的材料， 以及集成电路中的铜衬底。合成化学 单一来源前体也将导致新的早期过渡金属 结构无机化学的基本兴趣的配合物。

This award to Prof. Charles Winter at Wayne State University is supported by the Advanced Materials and Processing Program in the Chemistry Division. The research will focus on new precursors and processes for tantalum nitride and related thin film materials. New low temperature routes to binary and ternary transition metal nitrides of tantalum, niobium, zirconium and hafnium will be developed with particular emphasis on tantalum nitride thin films. Specific objectives are: (1) synthesis and characterization of tantalum complexes with a range of nitrogen-containing ligands such as alkyl hydrazines, 1,3-diaryltriazines, pyrazoles, 1,2,4-triazoles and tetrazoles as single source precursors for nitrides; (2)examination of chemical vapor deposition reactions of the nitrogen ligands and tantalum (V) source compounds as low temperature routes to nitride films; (3) development of ternary tantalum-silicon nitrides by addition of volatile silicon sources; and, (4) extension of the tantalum technology to other early transition metal nitrides. Nitride films will be characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and Rutherford back-scattering. Nitride thin films are recognized for a wide range of important properties including hardness, chemical resistance, electrical conductivity and desirable optical properties. Currently, nitride films are made by high temperature sputtering. The early transition metal nitrides studied in this research will be prepared by low temperature chemical vapor deposition and will impact the development of barrier materials for microelectronic applications, particularly between silicon and copper substrates in integrated circuits. The synthetic chemistry of single source precursors will also lead to new early transition metal complexes of fundamental interest to structural inorganic chemistry.