Precursors and Processes for Tantalum Nitride and Related Thin Film Materials

该奖项授予韦恩州立大学的Charles Winter教授，由化学学部的先进材料和加工项目提供支持。研究重点是氮化钽及相关薄膜材料的新前驱体和新工艺。将开发新的低温途径制备钽、铌、锆和铪的二元和三元过渡金属氮化物，重点是氮化钽薄膜。具体目标是：(1)合成和表征钽配合物与一系列含氮配体，如烷基肼、1,3-二烷基三嗪、吡唑、1,2,4-三唑和四唑作为氮化物的单一来源前体；(2)考察了氮配体和钽(V)源化合物的化学气相沉积反应作为低温氮化膜的途径；(3)加入挥发性硅源制备三元钽硅氮化物；(4)将钽技术推广到其他早期过渡金属氮化物。用x射线衍射、x射线光电子能谱、扫描电子显微镜和卢瑟福背散射对氮化膜进行表征。氮化薄膜具有广泛的重要性能，包括硬度、耐化学性、导电性和理想的光学性能。目前，氮化膜是通过高温溅射制备的。本研究中研究的早期过渡金属氮化物将通过低温化学气相沉积制备，并将影响微电子应用中阻挡材料的发展，特别是集成电路中硅和铜衬底之间的阻挡材料。单源前体的合成化学也将导致对结构无机化学具有根本兴趣的新的早期过渡金属配合物。

This award to Prof. Charles Winter at Wayne State University is supported by the Advanced Materials and Processing Program in the Chemistry Division. The research will focus on new precursors and processes for tantalum nitride and related thin film materials. New low temperature routes to binary and ternary transition metal nitrides of tantalum, niobium, zirconium and hafnium will be developed with particular emphasis on tantalum nitride thin films. Specific objectives are: (1) synthesis and characterization of tantalum complexes with a range of nitrogen-containing ligands such as alkyl hydrazines, 1,3-diaryltriazines, pyrazoles, 1,2,4-triazoles and tetrazoles as single source precursors for nitrides; (2)examination of chemical vapor deposition reactions of the nitrogen ligands and tantalum (V) source compounds as low temperature routes to nitride films; (3) development of ternary tantalum-silicon nitrides by addition of volatile silicon sources; and, (4) extension of the tantalum technology to other early transition metal nitrides. Nitride films will be characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and Rutherford back-scattering. Nitride thin films are recognized for a wide range of important properties including hardness, chemical resistance, electrical conductivity and desirable optical properties. Currently, nitride films are made by high temperature sputtering. The early transition metal nitrides studied in this research will be prepared by low temperature chemical vapor deposition and will impact the development of barrier materials for microelectronic applications, particularly between silicon and copper substrates in integrated circuits. The synthetic chemistry of single source precursors will also lead to new early transition metal complexes of fundamental interest to structural inorganic chemistry.