GOALI: Atomic Layer Deposition Growth of Challenging Transition Metal Thin Films

GOALI：具有挑战性的过渡金属薄膜的原子层沉积生长

• 批准号: 1212574
• 负责人: Charles Winter
• 金额: $ 45万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-01 至 2016-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1212574&HistoricalAwards=false
• 关键词: GOALI; Atomic; Layer; Deposition; Growth

In this project funded by the Macromolecular, Supramolecular and Nanochemistry Program of the Chemistry Division, Charles H. Winter of Wayne State University will develop new precursors and deposition methods for the growth of first row transition metal thin films. The project entails the synthesis and characterization of transition metal silyl complexes with optimized atomic layer deposition (ALD) precursor properties, solution reactions of the transition metal silyl complexes with complementary transition metal complexes containing other ligands to identify reactant pairs that afford metal powders, transformation of the solution reactions to ALD processes, and demonstration of copper/manganese alloy film formation and self-forming manganese-based copper diffusion barriers. This project will be performed in collaboration with SAFC Hitech, which will enable advanced ALD precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training postdoctoral fellows and graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for first row transition metal thin films.Thin layers of metals, only a few atoms in thickness, have many existing and anticipated future applications in microelectronics devices and functional materials. However, the required deposition processes are known for only a few, first row transition-metal elements. This research seeks to develop new molecular precursors and deposition chemistry that would enable the low temperature, atomic layer growth of these metals. Successful execution of the proposed research could enable practical applications such as self-forming copper diffusion barrier layers in microelectronics devices, magnetic random access memory device fabrication, and manufacturing of other devices that require thin films of first row transition metals. The technology from this project would contribute to the continued miniaturization of microelectronics devices which would have a broad, positive impact on the economy.

在这个由化学系高分子、超分子和纳米化学项目资助的项目中，韦恩州立大学的 Charles H. Winter 将开发用于第一排过渡金属薄膜生长的新前体和沉积方法。 该项目需要合成和表征具有优化原子层沉积（ALD）前体性能的过渡金属甲硅烷基络合物，过渡金属甲硅烷基络合物与含有其他配体的互补过渡金属络合物的溶液反应，以识别提供金属粉末的反应物对，将溶液反应转化为ALD工艺，以及铜/锰合金薄膜形成和自形成的演示 锰基铜扩散阻挡层。该项目将与 SAFC Hitech 合作执行，这将实现先进的 ALD 前驱体评估、大规模前驱体合成、先进的生长试验以及工业技术转让。更广泛的影响包括培训博士后研究员、研究生和本科生、通过在 GOALI 计划下组建一个协作小组（包括韦恩州立大学和 SAFC Hitech 人员）来加强研究和教育基础设施、为韦恩州立大学学生在 SAFC Hitech 进行工业实习，以及为第一排过渡金属薄膜采用新前体和原子层沉积工艺的潜在社会效益。 金属的厚度只有几个原子，在微电子器件和功能材料中具有许多现有和预期的未来应用。 然而，仅对于少数第一行过渡金属元素所需的沉积工艺是已知的。 这项研究旨在开发新的分子前体和沉积化学，以实现这些金属的低温原子层生长。 所提出的研究的成功执行可以实现实际应用，例如微电子器件中的自形成铜扩散阻挡层、磁性随机存取存储器器件制造以及需要第一行过渡金属薄膜的其他器件的制造。该项目的技术将有助于微电子设备的持续小型化，这将对经济产生广泛的积极影响。