GOALI: Atomic Layer Deposition Growth of Challenging Transition Metal Thin Films

GOALI：具有挑战性的过渡金属薄膜的原子层沉积生长

• 批准号: 1212574
• 负责人: Charles Winter
• 金额: $ 45万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-01 至 2016-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1212574&HistoricalAwards=false
• 关键词: GOALI; Atomic; Layer; Deposition; Growth

In this project funded by the Macromolecular, Supramolecular and Nanochemistry Program of the Chemistry Division, Charles H. Winter of Wayne State University will develop new precursors and deposition methods for the growth of first row transition metal thin films. The project entails the synthesis and characterization of transition metal silyl complexes with optimized atomic layer deposition (ALD) precursor properties, solution reactions of the transition metal silyl complexes with complementary transition metal complexes containing other ligands to identify reactant pairs that afford metal powders, transformation of the solution reactions to ALD processes, and demonstration of copper/manganese alloy film formation and self-forming manganese-based copper diffusion barriers. This project will be performed in collaboration with SAFC Hitech, which will enable advanced ALD precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training postdoctoral fellows and graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for first row transition metal thin films.Thin layers of metals, only a few atoms in thickness, have many existing and anticipated future applications in microelectronics devices and functional materials. However, the required deposition processes are known for only a few, first row transition-metal elements. This research seeks to develop new molecular precursors and deposition chemistry that would enable the low temperature, atomic layer growth of these metals. Successful execution of the proposed research could enable practical applications such as self-forming copper diffusion barrier layers in microelectronics devices, magnetic random access memory device fabrication, and manufacturing of other devices that require thin films of first row transition metals. The technology from this project would contribute to the continued miniaturization of microelectronics devices which would have a broad, positive impact on the economy.

在这个由化学部的大分子，超分子和纳米化学计划资助的项目中，韦恩州立大学的Charles H. Winter将开发新的前体和沉积方法，以增长第一行过渡金属薄膜的生长。 该项目需要具有优化的原子层沉积（ALD）前体性能的过渡金属晶体硅烷络合物的合成和表征基于锰的铜扩散屏障。该项目将与SAFC HITECH合作执行，该项目将使高级ALD前体评估，大规模前体合成，高级增长试验以及技术转移到行业。 The broader impacts involve training postdoctoral fellows and graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for first row transition metal thin films.Thin layers of金属只有少数原子的厚度，在微电子设备和功能材料中具有许多现有且预期的未来应用。 但是，所需的沉积过程仅以少数第一行过渡金属元素而闻名。 这项研究旨在开发新的分子前体和沉积化学，以使这些金属的低温，原子层生长。 成功执行拟议的研究可以实现实际应用，例如微电子设备中的自我形成铜扩散屏障层，磁随机访问记忆设备制造以及其他需要第一行过渡金属薄膜的设备的制造。该项目的技术将有助于微型设备的持续微型化，这将对经济产生广泛的积极影响。