GOALI: Atomic Layer Deposition Growth of Challenging Transition Metal Thin Films

在这个由化学系大分子、超分子和纳米化学项目资助的项目中，查尔斯·H·韦恩州立大学的温特将为第一行过渡金属薄膜的生长开发新的前体和沉积方法。 该项目涉及具有优化的原子层沉积（ALD）前体性质的过渡金属甲硅烷基络合物的合成和表征，过渡金属甲硅烷基络合物与含有其他配体的互补过渡金属络合物的溶液反应以识别提供金属粉末的反应物对，溶液反应向ALD工艺的转化，以及铜/锰合金膜形成和自形成锰基铜扩散阻挡层的演示。该项目将与SAFC Hitech合作进行，这将使先进的ALD前体评估，大规模前体合成，先进的生长试验和技术转移到行业。更广泛的影响包括培训博士后研究员和研究生和本科生，通过在GOALI计划下汇集一个合作小组来加强研究和教育基础设施，该计划包括韦恩州立大学和SAFC Hitech人员，韦恩州立大学学生在SAFC Hitech的工业实习，以及具有用于第一行过渡金属薄膜的新前体和原子层沉积工艺的潜在社会效益。金属薄层，厚度仅为几个原子，在微电子器件和功能材料中具有许多现有的和预期的未来应用。 然而，已知仅用于少数第一行过渡金属元素的所需沉积工艺。 这项研究旨在开发新的分子前体和沉积化学，使这些金属的低温原子层生长成为可能。 成功执行所提出的研究可以使实际应用，如自形成铜扩散阻挡层的微电子器件，磁性随机存取存储器器件的制造，以及其他设备的制造，需要薄膜的第一行过渡金属。该项目的技术将有助于微电子设备的持续小型化，这将对经济产生广泛的积极影响。

In this project funded by the Macromolecular, Supramolecular and Nanochemistry Program of the Chemistry Division, Charles H. Winter of Wayne State University will develop new precursors and deposition methods for the growth of first row transition metal thin films. The project entails the synthesis and characterization of transition metal silyl complexes with optimized atomic layer deposition (ALD) precursor properties, solution reactions of the transition metal silyl complexes with complementary transition metal complexes containing other ligands to identify reactant pairs that afford metal powders, transformation of the solution reactions to ALD processes, and demonstration of copper/manganese alloy film formation and self-forming manganese-based copper diffusion barriers. This project will be performed in collaboration with SAFC Hitech, which will enable advanced ALD precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training postdoctoral fellows and graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for first row transition metal thin films.Thin layers of metals, only a few atoms in thickness, have many existing and anticipated future applications in microelectronics devices and functional materials. However, the required deposition processes are known for only a few, first row transition-metal elements. This research seeks to develop new molecular precursors and deposition chemistry that would enable the low temperature, atomic layer growth of these metals. Successful execution of the proposed research could enable practical applications such as self-forming copper diffusion barrier layers in microelectronics devices, magnetic random access memory device fabrication, and manufacturing of other devices that require thin films of first row transition metals. The technology from this project would contribute to the continued miniaturization of microelectronics devices which would have a broad, positive impact on the economy.