GOALI: Precursors for the Atomic Layer Deposition of Metallic Films

GOALI：金属薄膜原子层沉积的前驱体

• 批准号: 1607973
• 负责人: Charles Winter
• 金额: $ 47.5万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-07-15 至 2020-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1607973&HistoricalAwards=false
• 关键词: GOALI; Precursors; Atomic; Layer; Deposition

Thin metallic films of very high quality are required in the manufacture of computer chips and other high technology devices, but current methods for growing these materials are not adequate to the task at hand. Dr. Winter of Wayne State University and his industrial collaborator, Dr. Ravi Kanjolia of SAFC Hitech, are investigating new molecules and chemical reactions that can enable the growth of thin metal films. They are especially interested in understanding how changes in the structures of the molecules affects their ability to fabricate high purity films. The team employs a technique known as atomic layer deposition which allows metal films to be grown with precise thicknesses and spatial resolution, even in narrow and deep features required in the manufacture of computer chips. The fundamental understanding gained in this project advances the future design of new molecules to grow films and create new devices. Dr. Winter's research program attracts students at many levels, ranging from undergraduates to postdoctoral fellows, and has broader impact in educating scientists for a well-trained future workforce. In this research program, Dr. Winter of Wayne State University and his industrial collaborator Dr. Ravi Kanjolia of SAFC Hitech are supported by the Macromolecular, Supramolecular and Nanochemistry (MSN) Program to develop new precursors and deposition methods for the growth of nickel, cobalt, manganese, titanium, aluminum, and magnesium thin films by atomic layer deposition (ALD). The project entails the synthesis and characterization of metal silyl complexes with optimized atomic layer deposition precursor properties, solution reactions of the metal silyl complexes with complementary metal complexes or organic reducing agents. The researchers identify reactant pairs that afford metal powders, transform the solution reactions to atomic layer deposition processes, explore of selective metal growth on various substrates, and grow titanium/aluminum alloy films by atomic layer deposition. This project is in collaboration with SAFC Hitech, which enables advanced atomic layer deposition precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for electropositive metal thin films.

制造计算机芯片和其他高科技设备需要非常高质量的金属薄膜，但目前生长这些材料的方法不足以满足手头的任务。韦恩州立大学的温特博士和他的工业合作伙伴、SAFC Hitech的Ravi Kanjolia博士正在研究能够使金属薄膜生长的新分子和化学反应。他们特别感兴趣的是了解分子结构的变化如何影响他们制造高纯度薄膜的能力。该团队采用了一种名为原子层沉积的技术，这种技术允许以精确的厚度和空间分辨率生长金属薄膜，即使是在制造计算机芯片所需的窄而深的特征中也是如此。在这个项目中获得的基本理解促进了未来新分子的设计，以生长薄膜和创造新设备。温特博士的研究项目吸引了多个层次的学生，从本科生到博士后研究员，并在为训练有素的未来劳动力培养科学家方面产生了更广泛的影响。在这项研究中，韦恩州立大学的温特博士和他的工业合作伙伴SAFC Hitech的Ravi Kanjolia博士在高分子、超分子和纳米化学(MSN)计划的支持下，开发了用于原子层沉积(ALD)生长镍、钴、锰、钛、铝和镁薄膜的新的前驱体和沉积方法。该项目需要合成和表征具有优化的原子层沉积前驱体性质的金属硅基络合物，金属硅基络合物与互补金属络合物或有机还原剂的溶液反应。研究人员确定了提供金属粉末的反应物对，将溶液反应转化为原子层沉积过程，探索在各种衬底上选择性生长金属，并通过原子层沉积生长钛/铝合金薄膜。该项目与SAFC高科技公司合作，使先进的原子层沉积前驱体评估、大规模前驱体合成、先进的生长试验和技术转移到工业中。更广泛的影响包括培训研究生和本科生，通过将包括韦恩州立大学和SAFC高技术人员在内的GOALI计划下的一个合作小组聚集在一起，加强研究和教育基础设施，为韦恩州立大学的学生在SAFC高技术公司进行工业实习，以及拥有新的电阳极金属薄膜前驱体和原子层沉积工艺的潜在社会效益。