Atomic Layer Deposition of Metal Nitride and Oxide Thin Films

金属氮化物和氧化物薄膜的原子层沉积

• 批准号: 0314615
• 负责人: Charles Winter
• 金额: $ 36万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0314615&HistoricalAwards=false
• 关键词: Atomic; Layer; Deposition; Metal; Nitride

This award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports research by Dr. Charles H. Winter at Wayne State University to develop and evaluate precursors for the growth of thin metal nitride and oxide films by Atomic Layer Deposition and related layer-by-layer film growth techniques. As the microelectronics industry moves to progressively smaller sizes, traditional materials may no longer provide the required properties in future devices. This research aims at producing thin films of new metal nitride barrier materials (TaN, WNx) and new metal oxide insulators through the study of volatile tantalum complexes and the synthesis, structure, and properties of tungsten(VI) complexes. Substitutents in these compounds will be manipulated to achieve the thermal stability and reactivity toward ammonia, hydrazine derivatives, and other nitrogen source compounds required for nitride Atomic Layer Deposition film growth. Volatile zirconium, halfnium and lanthanide metal amidinate compounds will also be explored to achieve the thermal stability and reactivity toward water, oxygen, ozone, and other source compounds required for oxide Atomic Layer Deposition film growth. Information from the deposition experiments will be used to design improved second and third generation precursors that maximize materials properties.Successful execution of this research leads toward a range of optimized Atomic Layer Deposition precursors to provide important types of metal nitride and oxide thin films. The growth of very thin layers of nitride barrier materials and high dielectric oxides by Atomic Layer Deposition techniques is a central challenge that must be solved to maintain the pace of future miniaturization in microelectronics devices. A central feature of the proposed research is the collaboration with Professor Niinisto at the University of Helsinki to perform Atomic Layer Deposition film growth studies. The proposed pairing of synthetic inorganic and film growth groups will accelerate the development of Atomic Layer Deposition precursors and film growth procedures. Students will benefit from working in an interdisciplinary environment that includes synthetic inorganic chemistry, film growth and characterization, international experience, and industrial internships. The scope of the proposed research requires the development of excellent communication skills to prosper in academic, industrial, and international settings. The students will experience a diverse educational environment, and will emerge with very broad scientific skills and perspective that will prepare them well for their independent careers.

这个奖项在无机，生物无机和有机化学计划支持研究博士查尔斯H。 Winter博士在韦恩州立大学从事原子层沉积和相关的逐层薄膜生长技术的金属氮化物和氧化物薄膜生长前体的开发和评估。 随着微电子工业逐渐向更小的尺寸发展，传统材料可能不再提供未来设备所需的性能。 本研究旨在通过对挥发性钽配合物和钨（VI）配合物的合成、结构和性质的研究，制备新型金属氮化物阻挡材料（TaN，WNx）和新型金属氧化物绝缘体的薄膜。 将操纵这些化合物中的取代基以实现热稳定性和对氨、肼衍生物和氮化物原子层沉积膜生长所需的其它氮源化合物的反应性。 还将探索挥发性锆、半胱氨酸和镧系金属脒化合物，以实现对氧化物原子层沉积膜生长所需的水、氧气、臭氧和其他源化合物的热稳定性和反应性。 从沉积实验中获得的信息将用于设计改进的第二代和第三代前体，以最大限度地提高材料性能。这项研究的成功执行将导致一系列优化的原子层沉积前体，以提供重要类型的金属氮化物和氧化物薄膜。 通过原子层沉积技术生长氮化物阻挡材料和高介电氧化物的非常薄的层是必须解决的核心挑战，以保持微电子器件中未来小型化的步伐。 拟议研究的一个中心特征是与赫尔辛基大学的Niinisto教授合作进行原子层沉积薄膜生长研究。 合成无机物和薄膜生长组的拟议配对将加速原子层沉积前体和薄膜生长程序的发展。 学生将受益于在跨学科的环境中工作，包括合成无机化学，薄膜生长和表征，国际经验和工业实习。 拟议的研究范围需要发展优秀的沟通技能，以在学术，工业和国际环境中繁荣。 学生将体验到多元化的教育环境，并将获得非常广泛的科学技能和视角，这将为他们的独立职业做好准备。