Atomic Layer Deposition of Metal Nitride and Oxide Thin Films

该奖项在无机、生物无机和有机金属化学项目中支持Wayne州立大学Charles H. Winter博士的研究，以开发和评估通过原子层沉积和相关的逐层薄膜生长技术生长金属氮化物和氧化物薄膜的前驱体。随着微电子工业逐渐向更小尺寸移动，传统材料可能不再提供未来设备所需的性能。本研究旨在通过研究挥发性钽配合物和钨（VI）配合物的合成、结构和性能，制备新型金属氮化物阻挡材料（TaN、WNx）薄膜和新型金属氧化物绝缘体。这些化合物中的取代基将被操纵，以达到对氨、肼衍生物和氮原子层沉积膜生长所需的其他氮源化合物的热稳定性和反应性。还将探索挥发性锆、铪和镧系金属酰胺酸盐化合物，以实现对水、氧、臭氧和氧化物原子层沉积膜生长所需的其他源化合物的热稳定性和反应性。来自沉积实验的信息将用于设计改进的第二代和第三代前驱体，以最大限度地提高材料性能。这项研究的成功实施将导致一系列优化的原子层沉积前驱体，以提供重要类型的金属氮化物和氧化物薄膜。利用原子层沉积技术生长极薄层氮化势垒材料和高介电氧化物是保持微电子器件未来小型化步伐必须解决的核心挑战。拟议研究的一个中心特点是与赫尔辛基大学的Niinisto教授合作进行原子层沉积薄膜生长研究。提出的合成无机和薄膜生长基团的配对将加速原子层沉积前体和薄膜生长程序的发展。学生将受益于跨学科的工作环境，包括合成无机化学、薄膜生长和表征、国际经验和工业实习。拟议的研究范围要求发展优秀的沟通技巧，以在学术，工业和国际环境中取得成功。学生们将体验到多样化的教育环境，并将具备非常广泛的科学技能和视角，为他们独立的职业生涯做好准备。

This award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports research by Dr. Charles H. Winter at Wayne State University to develop and evaluate precursors for the growth of thin metal nitride and oxide films by Atomic Layer Deposition and related layer-by-layer film growth techniques. As the microelectronics industry moves to progressively smaller sizes, traditional materials may no longer provide the required properties in future devices. This research aims at producing thin films of new metal nitride barrier materials (TaN, WNx) and new metal oxide insulators through the study of volatile tantalum complexes and the synthesis, structure, and properties of tungsten(VI) complexes. Substitutents in these compounds will be manipulated to achieve the thermal stability and reactivity toward ammonia, hydrazine derivatives, and other nitrogen source compounds required for nitride Atomic Layer Deposition film growth. Volatile zirconium, halfnium and lanthanide metal amidinate compounds will also be explored to achieve the thermal stability and reactivity toward water, oxygen, ozone, and other source compounds required for oxide Atomic Layer Deposition film growth. Information from the deposition experiments will be used to design improved second and third generation precursors that maximize materials properties.Successful execution of this research leads toward a range of optimized Atomic Layer Deposition precursors to provide important types of metal nitride and oxide thin films. The growth of very thin layers of nitride barrier materials and high dielectric oxides by Atomic Layer Deposition techniques is a central challenge that must be solved to maintain the pace of future miniaturization in microelectronics devices. A central feature of the proposed research is the collaboration with Professor Niinisto at the University of Helsinki to perform Atomic Layer Deposition film growth studies. The proposed pairing of synthetic inorganic and film growth groups will accelerate the development of Atomic Layer Deposition precursors and film growth procedures. Students will benefit from working in an interdisciplinary environment that includes synthetic inorganic chemistry, film growth and characterization, international experience, and industrial internships. The scope of the proposed research requires the development of excellent communication skills to prosper in academic, industrial, and international settings. The students will experience a diverse educational environment, and will emerge with very broad scientific skills and perspective that will prepare them well for their independent careers.