GOALI: Precursors for the Atomic Layer Deposition Growth of Transition Metal Thin Films

GOALI：过渡金属薄膜原子层沉积生长的前驱体

• 批准号: 0910475
• 负责人: Charles Winter
• 金额: $ 45万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-06-01 至 2012-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0910475&HistoricalAwards=false
• 关键词: GOALI; Precursors; Atomic; Layer; Deposition

In this GOALI project funded by the Inorganic, Bioinorganic, and Organometallic Chemistry Program of the Chemistry Division, Charles Winter of Wayne State University and Dr. Marek Boleslawski of Sigma-Aldrich Fine Chemicals (SAFC Hitech) Corporation will develop and test chemical precursors for atomic layer deposition (ALD) film growth techniques. A primary target film composition will be the Cu/Mn alloy, because these films have been shown to form 2-8 nm MnSixOy diffusion barriers between the silica/silicon and copper layers. Such Cu diffusion barriers are critical for the microelectronics industry in their quest for fabricating smaller feature sizes on silicon chips. Presently, only sputtering methods are capable of forming requisite Cu/Mn alloy films, and they provide poor coverage when applied to substrates with very small feature sizes. A central feature of the collaborative project will be sending Wayne State University students to SAFC Hitech for 3 to 6 month internships to gain an industrial perspective on the electronic chemical field. Students from Wayne State University will also travel to the laboratories of Professor Lauri Niinist at the Helsinki University of Technology for 6-8 week visits to participate in film growth and characterization experiments.

在这个由化学部无机、生物无机和有机金属化学项目资助的 GOALI 项目中，韦恩州立大学的 Charles Winter 和 Sigma-Aldrich Fine Chemicals (SAFC Hitech) Corporation 的 Marek Boleslawski 博士将开发和测试用于原子层沉积 (ALD) 薄膜生长技术的化学前体。 主要目标薄膜成分是 Cu/Mn 合金，因为这些薄膜已被证明可在二氧化硅/硅和铜层之间形成 2-8 nm MnSixOy 扩散势垒。 这种铜扩散势垒对于微电子行业在硅芯片上制造更小的特征尺寸至关重要。 目前，只有溅射方法能够形成所需的Cu/Mn合金薄膜，并且当应用于特征尺寸非常小的基板时，它们的覆盖率很差。 该合作项目的一个核心特点是将韦恩州立大学的学生送到 SAFC Hitech 进行 3 至 6 个月的实习，以获得电子化学领域的工业视角。 韦恩州立大学的学生还将前往赫尔辛基理工大学Lauri Niinist教授的实验室进行6-8周的参观，参与薄膜生长和表征实验。