GOALI: Precursors for the Atomic Layer Deposition Growth of Transition Metal Thin Films

在这个由化学部无机化学、生物无机化学和金属有机化学计划资助的GALI项目中，韦恩州立大学的Charles温特和Sigma-Aldrich Fine Chemals(SAFC Hitech)公司的Marek Boleslawski博士将开发和测试用于原子层沉积(ALD)薄膜生长技术的化学前体。主要的目标薄膜成分将是铜/锰合金，因为这些薄膜已经被证明在二氧化硅/硅和铜层之间形成了2-8 nm的MnSixOy扩散势垒。在微电子行业寻求在硅芯片上制造更小的特征尺寸时，这种铜扩散障碍是至关重要的。目前，只有溅射方法才能形成所需的铜/锰合金薄膜，当应用于特征尺寸非常小的衬底时，它们的覆盖率很低。合作项目的一个主要特点是派遣韦恩州立大学的学生到SAFC高科技公司实习3至6个月，以获得电子化工领域的行业视角。韦恩州立大学的学生还将前往赫尔辛基科技大学劳里·尼尼斯特教授的实验室进行为期6-8周的访问，参与电影生长和表征实验。

In this GOALI project funded by the Inorganic, Bioinorganic, and Organometallic Chemistry Program of the Chemistry Division, Charles Winter of Wayne State University and Dr. Marek Boleslawski of Sigma-Aldrich Fine Chemicals (SAFC Hitech) Corporation will develop and test chemical precursors for atomic layer deposition (ALD) film growth techniques. A primary target film composition will be the Cu/Mn alloy, because these films have been shown to form 2-8 nm MnSixOy diffusion barriers between the silica/silicon and copper layers. Such Cu diffusion barriers are critical for the microelectronics industry in their quest for fabricating smaller feature sizes on silicon chips. Presently, only sputtering methods are capable of forming requisite Cu/Mn alloy films, and they provide poor coverage when applied to substrates with very small feature sizes. A central feature of the collaborative project will be sending Wayne State University students to SAFC Hitech for 3 to 6 month internships to gain an industrial perspective on the electronic chemical field. Students from Wayne State University will also travel to the laboratories of Professor Lauri Niinist at the Helsinki University of Technology for 6-8 week visits to participate in film growth and characterization experiments.