Novel Approaches for Deposition, Characterization and DeviceStudies of Carbon Nitride

氮化碳沉积、表征和器件研究的新方法

• 批准号: 9522129
• 负责人: Shubhra Gangopadhyay
• 金额: $ 7万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522129&HistoricalAwards=false
• 关键词: Novel; Approaches; Deposition; Characterization; DeviceStudies

9522129 Gangopadhyay The proposal by Prof. Gangopadhyay involves novel approaches for the deposition, characterization and device studies in Carbon Nitride. The experimental work focuses on the development of two deposition systems, namely, a remote plasma enhanced chemical vapor system (RPECVD) and a capacitive discharge chamber (CDC) for the growth of 'superhard' carbon nitride. The carbon films grown by these methods is expected to be amorphous or crystalline depending upon the parameters, substrate temperature and bias voltages employed in the process. An application of these films is in the area of antifuzes for field programmable gate arrays (FPGA's). Previous studies of this material were unsuccessful due to the stability of the plasma; however, the acquisition of a remote plasma system should enable the PI to achieve control over the C-H and N-H products in the chamber. ***

9522129 Gangopadhyay Gangopadhyay教授的提案涉及氮化碳沉积、表征和器件研究的新方法。 实验工作的重点是两个沉积系统的发展，即远程等离子体增强化学气相沉积系统（RPECVD）和电容放电室（CDC）的“超硬”氮化碳的生长。 通过这些方法生长的碳膜预期是非晶的或结晶的，这取决于工艺中采用的参数、衬底温度和偏压。 这些薄膜的一个应用是现场可编程门阵列（FPGA）的反引信领域。 由于等离子体的稳定性，该材料的先前研究未成功;然而，获得远程等离子体系统应使PI能够实现对腔室中C-H和N-H产物的控制。 ***