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Novel Approaches for Deposition, Characterization and DeviceStudies of Carbon Nitride

Novel Approaches for Deposition, Characterization and DeviceStudies of Carbon Nitride
氮化碳沉积、表征和器件研究的新方法
批准号:
9522129
负责人:
Shubhra Gangopadhyay
金额:
$7.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-09-01 至 1997-08-31

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中文摘要
翻译
9522129 Gangopadhyay教授的建议涉及氮化碳的沉积、表征和器件研究的新方法。实验工作集中于开发两个沉积系统,即远程等离子体增强化学气相系统(RPECVD)和用于生长超硬氮化碳的电容放电室(CDC)。根据工艺参数、衬底温度和偏压的不同,用这些方法生长的碳膜可能是非晶态的,也可能是晶态的。这些薄膜的一个应用领域是现场可编程门阵列(FPGA)的反引信。由于等离子体的稳定性,以前对这种材料的研究没有成功;然而,远程等离子体系统的获取应该能够使PI实现对室内C-H和N-H产物的控制。***
英文摘要
9522129 Gangopadhyay The proposal by Prof. Gangopadhyay involves novel approaches for the deposition, characterization and device studies in Carbon Nitride. The experimental work focuses on the development of two deposition systems, namely, a remote plasma enhanced chemical vapor system (RPECVD) and a capacitive discharge chamber (CDC) for the growth of 'superhard' carbon nitride. The carbon films grown by these methods is expected to be amorphous or crystalline depending upon the parameters, substrate temperature and bias voltages employed in the process. An application of these films is in the area of antifuzes for field programmable gate arrays (FPGA's). Previous studies of this material were unsuccessful due to the stability of the plasma; however, the acquisition of a remote plasma system should enable the PI to achieve control over the C-H and N-H products in the chamber. ***
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