New methods for the growth of carbon nitride
New methods for the growth of carbon nitride
批准号:
9619256
负责人:
Shubhra Gangopadhyay
金额:
$2.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-10-01 至 1997-09-30
中文摘要
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英文摘要
9619256 Gangopadhyay Carbon nitride films will be grown using two growth techniques, capacitive discharge chamber (CDC) growth, and plasma enhanced chemical vapor deposition (PECVD). These films will be characterized in an extensive study of their physical properties. Growth using CDC is a novel approach, and promises significant potential for producing crystalline B-C3 N4 films. ***
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