Collaborative Research: High Density Metal and Semiconductor Nanoparticles for Memory and Photonic Applications

合作研究:用于存储器和光子应用的高密度金属和半导体纳米颗粒

基本信息

  • 批准号:
    0801753
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2008
  • 资助国家:
    美国
  • 起止时间:
    2008-06-01 至 2012-05-31
  • 项目状态:
    已结题

项目摘要

Abstract:Research Objectives and Approaches: The objective of this research is to study and optimize the interactions of nanoparticles in memory and photonic devices. Activities carried out under this project will include the formation and thermal stability of nanocrystals of the right size, size distribution and spacing by three viable methods, understanding electron injection into the metallic and semiconductor nanoparticles, understanding electron transfer between nanoparticles and the adjacent dielectric material and integrating nanoparticles in emerging memory and photonic devices such as FinFLASH and FinLight. Intellectual Merit The success of the proposed activity will result in high performance memory and photonics devices which are fully compatible with CMOS. This will be accompanied by gaining fundamental insight into the interface between nanocrystals and its surrounding dielectrics. The collaboration with industry leaders in memory area will further solidify the approaches used in this work and transition them into viable manufacturable processes. Broader Impact: The successful implementation of robust nanoparticle based devices will open up new opportunities not only in electronics but also in emerging areas such as biosensors and energy efficiency. PIs at both institutions will develop educational programs such as undergraduate nanolab course, development of a a nanocamp for high school students, an engineer?s week for even younger students, and career fairs for minorities for graduate schools which will enrich the student experience and also increase diversity of the education workforce. In addition, industrial internships provided to the graduate students will foster communication of industry needs to the university, while providing a highly trained workforce for industry in the future.
摘要:研究目的和方法:本研究的目的是研究和优化纳米颗粒在存储和光子器件中的相互作用。在这个项目下进行的活动将包括通过三种可行的方法形成合适尺寸、尺寸分布和间距的纳米晶体和热稳定性,了解电子注入到金属和半导体纳米颗粒中,了解纳米颗粒与邻近介电材料之间的电子转移,以及将纳米颗粒集成到新兴的存储器和光子器件中,如FinFLASH和FinLight。该活动的成功将导致与CMOS完全兼容的高性能存储器和光子器件。这将伴随着对纳米晶体与其周围介质之间界面的基本洞察。与存储器领域的行业领导者的合作将进一步巩固这项工作中使用的方法,并将其转化为可行的可制造工艺。更广泛的影响:强大的纳米颗粒设备的成功实施将不仅在电子领域,而且在生物传感器和能源效率等新兴领域开辟新的机会。两所机构的pi将开发教育项目,如本科纳米实验室课程,为高中生开发纳米训练营,工程师?为更年轻的学生举办S周活动,为研究生院的少数族裔举办招聘会,这将丰富学生的经历,并增加教育劳动力的多样性。此外,为研究生提供的工业实习将促进工业需求与大学的沟通,同时为未来的工业提供训练有素的劳动力。

项目成果

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Shubhra Gangopadhyay其他文献

Patterning Single Cell-Electrode Pairs for Electrochemical Measurement of Quantal Exocytosis on Microchips
  • DOI:
    10.1016/j.bpj.2008.12.440
  • 发表时间:
    2009-02-01
  • 期刊:
  • 影响因子:
  • 作者:
    Xin Liu;Syed Barizuddin;Cherian J. Mathai;Shubhra Gangopadhyay;Kevin D. Gillis
  • 通讯作者:
    Kevin D. Gillis
Experimental characterization of optical nonlocality in metal-dielectric multilayer metamaterials.
金属电介质多层超材料中光学非定域性的实验表征。
  • DOI:
    10.1364/oe.22.022974
  • 发表时间:
    2014
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Lei Sun;Fei Cheng;C. Mathai;Shubhra Gangopadhyay;Jie Gao;Xiaodong Yang
  • 通讯作者:
    Xiaodong Yang
Molecularly imprinted polymer labeled with quantum dots for detection of nitroaromatic explosives
量子点标记的分子印迹聚合物用于检测硝基芳香族爆炸物
Experimental characterization of optical nonlocalities in metal-dielectric multilayer metamaterials
金属电介质多层超材料中光学非局域性的实验表征
Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication

Shubhra Gangopadhyay的其他文献

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{{ truncateString('Shubhra Gangopadhyay', 18)}}的其他基金

GOALI: Nanothermite Based Micro Shockwave Generators and Nanoparticles for Targeted and Efficient Gene/Drug Delivery
GOALI:基于纳米铝热剂的微型冲击波发生器和纳米颗粒,用于靶向高效的基因/药物递送
  • 批准号:
    0901566
  • 财政年份:
    2009
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
MRI: ACQUISITION OF A MULTI-FUNCTIONAL ELECTRON MICROSCOPE FOR STUDIES AT THE NANO/MICRO SCALE IN THE MATERIAL AND LIFE SCIENCES
MRI:购买多功能电子显微镜,用于材料和生命科学中纳米/微米尺度的研究
  • 批准号:
    0619607
  • 财政年份:
    2006
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Advanced High Dielectric Constant Gate Materials for CMOS Devices
合作研究:用于 CMOS 器件的先进高介电常数栅极材料
  • 批准号:
    0400025
  • 财政年份:
    2003
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Collaborative Research: Advanced High Dielectric Constant Gate Materials for CMOS Devices
合作研究:用于 CMOS 器件的先进高介电常数栅极材料
  • 批准号:
    0223109
  • 财政年份:
    2002
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
MRI: Advanced Processing Equipment for Microelectronics Research
MRI:用于微电子研究的先进处理设备
  • 批准号:
    9871290
  • 财政年份:
    1998
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
GOALI: New Dielectrics for Development of Metal to Metal Antifuse for FPGA
GOALI:用于开发 FPGA 金属对金属反熔丝的新型电介质
  • 批准号:
    9614593
  • 财政年份:
    1997
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
New methods for the growth of carbon nitride
氮化碳生长的新方法
  • 批准号:
    9619256
  • 财政年份:
    1996
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Novel Approaches for Deposition, Characterization and DeviceStudies of Carbon Nitride
氮化碳沉积、表征和器件研究的新方法
  • 批准号:
    9522129
  • 财政年份:
    1995
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Characterization of Intrinsic and Doped Hydrogenated Amor phous Silicon Thin Films Produced by Microwave Discharges inToroidal and Linear Plasma Systems
环形和线性等离子体系统中微波放电产生的本征和掺杂氢化非晶硅薄膜的表征
  • 批准号:
    9011235
  • 财政年份:
    1990
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant

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