Characterization of Intrinsic and Doped Hydrogenated Amor phous Silicon Thin Films Produced by Microwave Discharges inToroidal and Linear Plasma Systems

氢化非晶硅薄膜将使用低压沉积，德克萨斯理工大学提供环形和线性系统中的连续微波放电。这些液体源将被用作硅烷、膦、二硼烷和甲烷的替代品。我们计划使用红外吸收光谱，连续波发射和皮秒时间分辨光致发光光谱，飞行时间测量，以及光电导技术来表征在各种沉积条件下制备的薄膜。液态源和磁约束微波产生的等离子体有望在非常短的时间内沉积出高质量的薄膜。高增长率(10A/S)。我们已经在线性系统中沉积的本征薄膜和碳掺杂薄膜方面取得了有趣的结果。我们的最终目标是通过改变各种沉积参数(例如，微波功率，磁场，气体压力、衬底温度等)这最终将提高由这些薄膜制造的设备的质量。另一个目标是降低与目前的薄膜沉积技术相关的有毒和爆炸风险。

Hydrogenated amorphous silicon films will be deposited using low pressure, continuous microwave discharges in toroidal and linear systems available at Texas Tech University. The liquid sources will be used as a replacement for silane, phosphene, diborane and methane. We plan to use infrared absorption spectroscopy, continuous wave emission and picosecond time-resolved photoluminescence spectroscopy, time of flight measurements, and photoconductivity techniques to characterize the films prepared under a variety of deposition conditions. The liquid sources together with the magnetically confined microwave produced plasma are expected to deposit high quality films at very high growth rates (10A/s). We are already getting interesting results on intrinsic and carbon doped films deposited in a linear system. Our ultimate goal is to improve the quality of the films by varying various deposition parameters (e.g., microwave power, magnetic field, gas pressure, substrate temperature, etc.) This will finally improve the quality of the devices made from these films. Another goal is to reduce the toxic and explosive risks associated with present film deposition techniques.