Characterization of Intrinsic and Doped Hydrogenated Amor phous Silicon Thin Films Produced by Microwave Discharges inToroidal and Linear Plasma Systems

环形和线性等离子体系统中微波放电产生的本征和掺杂氢化非晶硅薄膜的表征

• 批准号: 9011235
• 负责人: Shubhra Gangopadhyay
• 金额: $ 6.9万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1992-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9011235&HistoricalAwards=false
• 关键词: Characterization; Intrinsic; Doped; Hydrogenated; Amor

Hydrogenated amorphous silicon films will be deposited using low pressure, continuous microwave discharges in toroidal and linear systems available at Texas Tech University. The liquid sources will be used as a replacement for silane, phosphene, diborane and methane. We plan to use infrared absorption spectroscopy, continuous wave emission and picosecond time-resolved photoluminescence spectroscopy, time of flight measurements, and photoconductivity techniques to characterize the films prepared under a variety of deposition conditions. The liquid sources together with the magnetically confined microwave produced plasma are expected to deposit high quality films at very high growth rates (10A/s). We are already getting interesting results on intrinsic and carbon doped films deposited in a linear system. Our ultimate goal is to improve the quality of the films by varying various deposition parameters (e.g., microwave power, magnetic field, gas pressure, substrate temperature, etc.) This will finally improve the quality of the devices made from these films. Another goal is to reduce the toxic and explosive risks associated with present film deposition techniques.

氢化非晶硅薄膜 将使用低 压力，连续微波 环形和线形放电 德克萨斯理工大学的系统 大学 液体源将 用作硅烷的替代物， 膦、乙硼烷和甲烷。 我们 计划使用红外吸收 光谱学，连续波 发射和皮秒 时间分辨光致发光 光谱学，飞行时间 测量和光电导 表征薄膜的技术 根据各种 沉积条件 的 液体源连同 磁约束微波 预计产生的等离子体 存款高品质的电影在非常 高增长率（10A/s）。 我们 已经得到了有趣的结果 在本征和碳掺杂膜上 沉积在线性系统中。 我们 最终目标是提高 通过改变薄膜的质量 各种沉积参数（例如， 微波功率，磁场，气体 压力，衬底温度， 等等）。 这将最终改善 由以下材料制成的器械的质量 这些电影。 另一个目标是 降低有毒和爆炸危险 与当前电影相关 沉积技术