Collaborative Research: Advanced High Dielectric Constant Gate Materials for CMOS Devices

合作研究：用于 CMOS 器件的先进高介电常数栅极材料

• 批准号: 0400025
• 负责人: Shubhra Gangopadhyay
• 金额: $ 25.67万
• 依托单位: University of Missouri-Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2006-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0400025&HistoricalAwards=false
• 关键词: Collaborative; Research; Advanced; Dielectric; Constant

0223109GangopadhyayThe project between Texas Tech University (TTU) and Lehigh University (LU) is a 'collaborative' program to conduct experimental and theoretical research in the area of advanced, ultra-thin, high dielectric constant (high-K) gate materials for CMOS devices. This project is motivated by the drive for advanced CMOS integrated circuits with sub-micron feature sizes and the need to scale the gate dielectric, while preventing quantum mechanical gate current between the silicon inversion layer and the overlying gate electrode. The Si02 gate dielectric will be replaced with a single or dual -dielectric film consisting of one or more monolayers of SiO2 to form the interfacial transition region covered with a high dielectric constant (high-K) insulator. The rationale for a collaborative proposal effort lies in the capabilities of the two universities with Texas Tech University expertise in high-K gate materials and Lehigh University integrating these materials into an advanced gate insulator for CMOS devices. Texas Tech University will form high-K, Hf02 or ZrO2 gate dielectrics with a custom electron-beam deposition system to be incorporated into advanced CMOS devices and test structures fabricated at Lehigh University. The collaborative project will employ the combined and complementary analytical techniques at both universities, such as reflection high-energy electron diffraction (RHEED) and low energy electron diffraction (LEED) at TTU combined with angle resolved photoelectron spectroscopy (ARXPS) and high-resolution transmission electron microscopy (HRTEM) at LU. Electrical characterization will be performed with unique test structures and measurement techniques to determine carrier trapping in the high-K dielectrics. The PI's multidisciplinary faculty will bring together students from different departments and universities in a project to foster a broad research and educational experience. The project is enhanced with close collaboration and outreach to industry.

0223109Gangopadhyay德克萨斯理工大学（TTU）和利哈伊大学（LU）之间的项目是一个“合作”计划，在CMOS器件的先进，超薄，高介电常数（高K）栅极材料领域进行实验和理论研究。该项目的动机是先进的CMOS集成电路与亚微米的特征尺寸和需要缩放的栅极电介质，同时防止量子力学的硅反型层和上覆的栅电极之间的栅极电流的驱动器。SiO2栅极电介质将被由一个或多个SiO2单层组成的单或双电介质膜替代，以形成覆盖有高介电常数（高K）绝缘体的界面过渡区。合作提案的理由在于两所大学的能力，德克萨斯理工大学在高K栅极材料方面的专业知识和利哈伊大学将这些材料集成到CMOS器件的先进栅极绝缘体中。德克萨斯理工大学将使用定制的电子束沉积系统形成高K、HfO2或ZrO2栅电极，并将其纳入利哈伊大学制造的先进CMOS器件和测试结构中。该合作项目将采用两所大学的组合和互补分析技术，例如TTU的反射高能电子衍射（RHEED）和低能电子衍射（LEED）与LU的角分辨光电子能谱（ARXPS）和高分辨率透射电子显微镜（HRTEM）相结合。将使用独特的测试结构和测量技术进行电气特性分析，以确定高K晶体管中的载流子陷阱。PI的多学科教师将把来自不同部门和大学的学生聚集在一个项目中，以促进广泛的研究和教育经验。该项目通过与业界的密切合作和外联得到加强。