Pressure and Stress Effects on Atomic Transport in Silicon and Germanium

压力和应力对硅和锗中原子输运的影响

• 批准号: 9525907
• 负责人: Michael Aziz
• 金额: $ 29.1万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1999-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9525907&HistoricalAwards=false
• 关键词: Pressure; Stress; Effects; Atomic; Transport

9525907 Aziz This research project aims for fundamental understanding of solid phase processes related to nucleation and epitaxial growth, and pursues this goal using a high pressure methodology for studying atomic diffusion in semiconductors and the effects of non-hydrostatic stresses on solid phase epitaxial growth processes. The theme of the research is to use high pressure as a thermodynamic parameter in order to obtain information on the activation volume of crystal growth or diffusion processes. The basic approach is to measure a growth rate or impurity diffusion rate as a function of pressure and to use this information to obtain the activation volume for the process. The magnitude and sign of the activation volume provide constraints on the physical models used to describe growth or diffusion processes. %%% The primary goal of this research project is to establish greater basic understanding of particular phenomena relevant to thin film synthesis and processing of two key electronic materials, silicon and germanium, and to relate this understanding to the development of advanced microelectronics devices through modifications in processing methods. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. ***

9525907阿齐兹这个研究项目旨在从根本上了解与成核和外延生长相关的固相过程，并使用高压方法来研究半导体中的原子扩散和非静力应力对固相外延生长过程的影响。这项研究的主题是使用高压作为热力学参数，以便获得关于晶体生长或扩散过程的激活体积的信息。基本的方法是测量作为压力函数的生长速率或杂质扩散速率，并使用该信息来获得该过程的激活体积。激活体积的大小和符号限制了用于描述生长或扩散过程的物理模型。本研究项目的主要目标是对两种关键电子材料硅和锗的薄膜合成和加工相关的特殊现象建立更基本的了解，并将这种了解与通过改进加工方法开发先进的微电子设备相联系。此外，该计划的一个重要特点是在一个重要的基础和技术领域对研究生和本科生进行培训。从这项研究项目中获得的知识和理解预计将总体上有助于提高用于计算、信息处理和电信的先进设备的性能。***