Kinetics of Interfacial Roughening Under Nonhydrostatic Stresses: New Interfacial Mobility Effects

本研究旨在通过对硅固相外延独特方面的研究，探索SiGe合金外延和复合半导体材料异质外延过程中常见的界面粗化的基本机理和动力学。关键参数特别相关的动力学现象，间距（波长），振幅和应力依赖于这种界面不稳定性将被确定。此外，计算机模拟和建模将作为研究的一个组成部分，以更好地分析实验结果，进一步了解和洞察界面粗化的机理细节。该项目将探索一种新的创新方法，以更好地理解对先进电子和光子材料的合成和加工至关重要的动力学现象。所提出的研究具有高回报的潜力，广泛的实验和理论数据积累到目前为止，几个关键问题可以适当地处理和解决的项目，以提供更大的理解和洞察的意义，推进微电子领域的原子水平过程。此外，该计划的一个重要特点是在一个基础和技术上重要的领域培养研究生和本科生。＊＊＊

9526583 Aziz This research aims, through the study of unique aspects of solid phase epitaxy of silicon, to explore the basic mechanism and kinetics of interfacial roughening commonly encountered during epitaxy of SiGe alloys, and during heteroepitaxy of compound semiconductor materials. Critical parameters of particular relevance to kinetic phenomena, the spacing(wavelength), amplitude and stress dependence of this interfacial instability will be determined. Additionally, computer simulation and modeling will be utilized as an integral part of the research to better analyze experimental results and gain further understanding and insight into the mechanistic details of interfacial roughening. %%% This project will explore a new and innovative approach achieve better fundamental understanding of kinetic phenomena of critical importance to the synthesis and processing of advanced electronic and photonic materials. The proposed research has potential for high pay-off to a broad range of experimental and theoretical data accumulated to date, and several key issues can be appropriately addressed and resolved by the project to provide greater understanding and insight to atomic level processes of significance to advancing the field of microelectronics. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***