Kinetics of Interfacial Roughening Under Nonhydrostatic Stresses: New Interfacial Mobility Effects

小行星9526583 本研究的目的是，通过研究硅的固相外延的独特方面，探索的基本机制和动力学的界面粗糙化过程中遇到的SiGe合金的外延，在异质外延的化合物半导体材料。 将确定与动力学现象特别相关的临界参数，这种界面不稳定性的间距（波长），振幅和应力依赖性。 此外，计算机模拟和建模将被用作研究的一个组成部分，以更好地分析实验结果，并进一步了解和洞察界面粗糙化的机理细节。该项目将探索一种新的创新方法，更好地理解对先进电子和光子材料的合成和加工至关重要的动力学现象。 拟议的研究有可能获得迄今为止积累的广泛的实验和理论数据的高回报，并且该项目可以适当地处理和解决几个关键问题，以提供对原子级过程的更好理解和洞察，这对推进微电子领域具有重要意义。此外，该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。***

9526583 Aziz This research aims, through the study of unique aspects of solid phase epitaxy of silicon, to explore the basic mechanism and kinetics of interfacial roughening commonly encountered during epitaxy of SiGe alloys, and during heteroepitaxy of compound semiconductor materials. Critical parameters of particular relevance to kinetic phenomena, the spacing(wavelength), amplitude and stress dependence of this interfacial instability will be determined. Additionally, computer simulation and modeling will be utilized as an integral part of the research to better analyze experimental results and gain further understanding and insight into the mechanistic details of interfacial roughening. %%% This project will explore a new and innovative approach achieve better fundamental understanding of kinetic phenomena of critical importance to the synthesis and processing of advanced electronic and photonic materials. The proposed research has potential for high pay-off to a broad range of experimental and theoretical data accumulated to date, and several key issues can be appropriately addressed and resolved by the project to provide greater understanding and insight to atomic level processes of significance to advancing the field of microelectronics. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***