Investigation of Atomic Transport in Semiconductors Using Pressure and Stress

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9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***