Investigation of Atomic Transport in Semiconductors Using Pressure and Stress

利用压力和应力研究半导体中的原子输运

• 批准号: 9813803
• 负责人: Michael Aziz
• 金额: $ 32万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-12-01 至 2002-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9813803&HistoricalAwards=false
• 关键词: Investigation; Atomic; Transport; Semiconductors; Using

9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

这个项目的目的是通过流体静力和非流体静力应力状态对硅中自身和杂质扩散以及晶体生长的影响的基础研究，获得更多的理解。研究者最近发现的动力学驱动的应力固体生长不稳定性理论的关键测试将使用固相外延作为模型系统进行。简单的应力状态，如流体静力和双轴应力，对原子扩散垂直于表面和平行于表面的影响将被测量，并使用新发展的非流体静力热力学理论相互比较。从这项研究中出现的概念框架和关键参数值预计将有助于确定主要的原子扩散机制；提供与从头算理论比较的基准参数值；并且允许在任意方向上原子扩散的任意应力状态的预测。从这项研究中产生的概念框架有望影响半导体器件制造和当前应变层异质外延生长的研究。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子器件的新领域提供基础材料科学知识。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和加工技术提供更多的基本理解和基础，为提高先进器件和电路的性能和稳定性提供新的知识。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。这个项目的目的是通过对静水和非静水应力状态对硅中自身和杂质扩散以及晶体生长的影响的基础研究，获得更多的理解。研究者最近发现的动力学驱动的应力固体生长不稳定性理论的关键测试将使用固相外延作为模型系统进行。简单的应力状态，如流体静力和双轴应力，对原子扩散垂直于表面和平行于表面的影响将被测量，并使用新发展的非流体静力热力学理论相互比较。从这项研究中出现的概念框架和关键参数值预计将有助于确定主要的原子扩散机制；提供与从头算理论比较的基准参数值；并且允许在任意方向上原子扩散的任意应力状态的预测。从这项研究中产生的概念框架有望影响半导体器件制造和当前应变层异质外延生长的研究。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子器件的新领域提供基础材料科学知识。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和加工技术提供更多的基本理解和基础，为提高先进器件和电路的性能和稳定性提供新的知识。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊