MRI: Development of a Focused Ion Beam System with Multi-Ion and Direct-Write/Implantation Capability for Fabrication of Mesoscale Structures

重大研究仪器计划的这一奖项支持哈佛大学和加州大学伯克利分校开发具有多离子和直接写入/注入能力的聚焦离子束系统，用于制造中尺度结构。哈佛大学和加州大学伯克利分校-LBNL将开发一种新的聚焦离子束(FIB)系统，该系统能够产生各种离子物种，用于直接注入、无掩膜图案和离子束雕刻，具有纳米分辨率。哈佛大学和加州大学伯克利分校的主要教职员工将根据研究需要制定设计规范。博士后任命和高级技术人员将跟踪该项目完成并投入运营。哈佛大学Golovchenko小组的离子雕刻研究将被应用于为该系统制造关键的离子源提取孔。主离子源、离子束操纵、离子光学和制造能力将由加州大学伯克利分校梁家安教授的团队提供。选定的专门组件将在LBNL分包合同下制造，梁教授在LBNL担任联合职务。该系统将由一个集成的多束流设施组成，该设施位于一个高真空处理和分析室内。将配置一台紧凑的扫描电子显微镜(SEM)用于原位成像。设计了一种可用于纳米加工和直接写入/注入的高分辨率聚焦离子束系统。离子源可以很容易地与FIB色谱柱互换，以获得最大的灵活性，包括使用负离子。将探索具有可控制的多光圈(多光束)的系统，以提高处理速度和通用性。为了方便未来的制造和研究应用，将在腔体中设计现场诊断。完成后的系统将由哈佛大学成像和中尺度结构中心(CIMS)的技术人员安装、操作和维护，作为一个新的共享设备设施，可供所有教职员工和合作者用于研究和教育。目前理解与中尺度结构相关的科学的研究表明，需要新的方法来制造未来的小规模结构。例如，传统的聚焦离子束(FIB)系统使用的是镓液态金属离子源，而镓是一种有害的污染物，严重限制了许多应用和基础研究。当前限制的第二个例子是需要选择性地掺杂/修改纳米级器件结构中的小区域。目前，这需要复杂的掩蔽、注入、蒸发、扩散、退火和升空步骤，随着器件尺寸的缩小，这些步骤变得越来越困难。第三个限制是传统系统缺乏集成诊断，这限制了研究应用。哈佛大学和加州大学伯克利分校/LBNL将合作开发一种新的聚焦离子束(FIB)系统，该系统能够利用各种离子束/物种进行直接注入、无掩膜图案和离子束雕刻，所有这些都具有纳米分辨率。该系统不仅将为研究提供独特的能力，而且在开发过程中所做的改进也将引起美国加工和设备行业的兴趣。通过将新系统作为哈佛成像和中尺度结构中心(CIMS)内的共享设备设施进行操作，现有的哈佛项目，如NSF材料研究和工程中心(MRSEC)、NSF纳米科学与工程中心(NSEC)和其他教职员工可以立即使用新系统进行研究、培训和教育。将与加州大学伯克利分校和感兴趣的行业保持密切联系，以确保该系统未来的最佳开发和应用。

This award from the Major Research Instrumentation program supports Harvard University and UC Berkeley with the development of a focused ion beam system with multi-ion and direct-write/implantation capability for fabrication of mesoscale structures. Harvard University and UC Berkeley-LBNL will develop a new Focused Ion Beam (FIB) system that is capable of producing a variety of ion species for direct implantation, maskless patterning, and ion beam sculpting, with nanometer resolution. Key Harvard and UC Berkeley faculty and staff will establish design specifications based on research needs. Postdoctoral appointments and senior technical staff will follow the project through completion and into operation. Ion sculpting research by the Golovchenko group at Harvard will be applied to fabricate critical ion source extraction apertures for the system. The primary ion source, ion beam manipulation, ion optics, and fabrication capabilities will be provided by Professor Ka-Ngo Leung's group at UC Berkeley. Selected specialized components will be fabricated under sub-contract at LBNL, where Professor Leung holds a joint appointment. The system will consist of an integrated, multiple-beam facility housed in a high vacuum processing and analysis chamber. A compact Scanning Electron Microscope (SEM) will be configured for in situ imaging. A high resolution Focused Ion Beam (FIB) system will be designed that can be used for nanofabrication and direct write/implantation. Ion sources will be easily interchangeable with the FIB column for maximum flexibility, including the use of negative ions. Systems with controllable, multiple apertures (multiple beams) will be explored to increase processing speed and versatility. In situ diagnostics will be designed into the chamber to facilitate future fabrication and research applications. The completed system will be installed, operated and maintained by technical staff of Harvard's Center for Imaging and Mesoscale Structures (CIMS) as a new shared equipment facility available to all faculty and collaborators for research and education. Current research to understand the science associated with mesoscale structures has shown the need for new approaches to the fabrication of future small-scale structures. For example, conventional Focused Ion Beam (FIB) systems utilize Gallium liquid metal ion sources and Gallium is an undesirable contaminant that severely limits many applications and fundamental studies. A second example of current limitations is the need to selectively dope/modify small regions in nanoscale device structures. At present this requires complex masking, implantation, evaporation, diffusion, annealing, and lift-off steps that become increasingly difficult as device dimensions shrink. A third limitation is the lack of integrated diagnostics in conventional systems which limit research applications. Harvard University and the University of California (UC) Berkeley/LBNL will collaborate to develop a new Focused Ion Beam (FIB) system capable of utilizing a variety of ion beams/species for direct implantation, maskless patterning, and ion beam sculpting, all with nanometer resolution. This system will not only provide unique capabilities for research, but improvements made in the course of the development will also be of interest in the U.S. processing and equipment industries. By operating the new system as a shared equipment facility within Harvard's Center for Imaging and Mesoscale Structures (CIMS), existing Harvard programs such as the NSF Materials Research and Engineering Center (MRSEC), the NSF Nanoscale Science and Engineering Center (NSEC), and other faculty and students can make immediate use of the new system for research, training, and education. Close ties will be maintained with UC Berkeley and interested industries to ensure optimum future development and applications of the system.