MRI: Development of a Focused Ion Beam System with Multi-Ion and Direct-Write/Implantation Capability for Fabrication of Mesoscale Structures

MRI：开发具有多离子和直写/注入能力的聚焦离子束系统，用于制造介观结构

• 批准号: 0216297
• 负责人: Michael Aziz
• 金额: $ 50万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-01 至 2006-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0216297&HistoricalAwards=false
• 关键词: MRI; Development; Focused; Ion; Beam

This award from the Major Research Instrumentation program supports Harvard University and UC Berkeley with the development of a focused ion beam system with multi-ion and direct-write/implantation capability for fabrication of mesoscale structures. Harvard University and UC Berkeley-LBNL will develop a new Focused Ion Beam (FIB) system that is capable of producing a variety of ion species for direct implantation, maskless patterning, and ion beam sculpting, with nanometer resolution. Key Harvard and UC Berkeley faculty and staff will establish design specifications based on research needs. Postdoctoral appointments and senior technical staff will follow the project through completion and into operation. Ion sculpting research by the Golovchenko group at Harvard will be applied to fabricate critical ion source extraction apertures for the system. The primary ion source, ion beam manipulation, ion optics, and fabrication capabilities will be provided by Professor Ka-Ngo Leung's group at UC Berkeley. Selected specialized components will be fabricated under sub-contract at LBNL, where Professor Leung holds a joint appointment. The system will consist of an integrated, multiple-beam facility housed in a high vacuum processing and analysis chamber. A compact Scanning Electron Microscope (SEM) will be configured for in situ imaging. A high resolution Focused Ion Beam (FIB) system will be designed that can be used for nanofabrication and direct write/implantation. Ion sources will be easily interchangeable with the FIB column for maximum flexibility, including the use of negative ions. Systems with controllable, multiple apertures (multiple beams) will be explored to increase processing speed and versatility. In situ diagnostics will be designed into the chamber to facilitate future fabrication and research applications. The completed system will be installed, operated and maintained by technical staff of Harvard's Center for Imaging and Mesoscale Structures (CIMS) as a new shared equipment facility available to all faculty and collaborators for research and education. Current research to understand the science associated with mesoscale structures has shown the need for new approaches to the fabrication of future small-scale structures. For example, conventional Focused Ion Beam (FIB) systems utilize Gallium liquid metal ion sources and Gallium is an undesirable contaminant that severely limits many applications and fundamental studies. A second example of current limitations is the need to selectively dope/modify small regions in nanoscale device structures. At present this requires complex masking, implantation, evaporation, diffusion, annealing, and lift-off steps that become increasingly difficult as device dimensions shrink. A third limitation is the lack of integrated diagnostics in conventional systems which limit research applications. Harvard University and the University of California (UC) Berkeley/LBNL will collaborate to develop a new Focused Ion Beam (FIB) system capable of utilizing a variety of ion beams/species for direct implantation, maskless patterning, and ion beam sculpting, all with nanometer resolution. This system will not only provide unique capabilities for research, but improvements made in the course of the development will also be of interest in the U.S. processing and equipment industries. By operating the new system as a shared equipment facility within Harvard's Center for Imaging and Mesoscale Structures (CIMS), existing Harvard programs such as the NSF Materials Research and Engineering Center (MRSEC), the NSF Nanoscale Science and Engineering Center (NSEC), and other faculty and students can make immediate use of the new system for research, training, and education. Close ties will be maintained with UC Berkeley and interested industries to ensure optimum future development and applications of the system.

来自主要研究仪器计划的这一奖项支持哈佛大学和加州大学伯克利分校开发具有多离子和直接写入/注入能力的聚焦离子束系统，用于制造中尺度结构。哈佛大学和加州大学伯克利分校LBNL将开发一种新的聚焦离子束（FIB）系统，该系统能够产生用于直接注入、无掩模图案化和离子束雕刻的各种离子种类，具有纳米分辨率。主要哈佛和加州大学伯克利分校的教师和工作人员将建立基于研究需求的设计规范。博士后任命和高级技术人员将跟踪该项目的完成和投入运营。哈佛Golovchenko小组的离子雕刻研究将用于制造系统的关键离子源提取孔径。初级离子源、离子束操纵、离子光学和制造能力将由加州大学伯克利分校的梁家玉教授的小组提供。选定的专门组件将在LBNL根据分包合同进行制造，梁教授在那里担任联合任命。该系统将包括一个高真空处理和分析室中的综合多光束设施。将配置紧凑型扫描电子显微镜（SEM）用于原位成像。将设计一个高分辨率聚焦离子束（FIB）系统，可用于纳米加工和直接写入/注入。离子源可与FIB色谱柱轻松互换，以获得最大的灵活性，包括使用负离子。将探索具有可控多孔径（多光束）的系统，以提高处理速度和多功能性。原位诊断将被设计到腔室中，以促进未来的制造和研究应用。完成的系统将由哈佛成像和中尺度结构中心（CIMS）的技术人员安装，操作和维护，作为一个新的共享设备设施，可供所有教师和合作者进行研究和教育。 目前的研究，以了解与中尺度结构的科学已经表明，需要新的方法来制造未来的小尺度结构。例如，传统的聚焦离子束（FIB）系统利用镓液态金属离子源，镓是严重限制许多应用和基础研究的不期望的污染物。电流限制的第二个例子是需要选择性地掺杂/修改纳米级器件结构中的小区域。目前，这需要复杂的掩模、注入、蒸发、扩散、退火和剥离步骤，随着器件尺寸的缩小，这些步骤变得越来越困难。第三个限制是传统系统中缺乏集成诊断，这限制了研究应用。哈佛大学和加州大学（UC）伯克利分校/LBNL将合作开发一种新的聚焦离子束（FIB）系统，该系统能够利用各种离子束/种类进行直接注入、无掩模图案化和离子束雕刻，所有这些都具有纳米分辨率。该系统不仅将提供独特的研究能力，而且在开发过程中所做的改进也将引起美国加工和设备行业的兴趣。通过将新系统作为哈佛成像和介观结构中心（CIMS）内的共享设备设施进行操作，现有的哈佛计划，如NSF材料研究与工程中心（MRSEC），NSF纳米科学与工程中心（NSEC）以及其他教师和学生可以立即使用新系统进行研究，培训和教育。将与加州大学伯克利分校和感兴趣的行业保持密切联系，以确保该系统的最佳未来发展和应用。