Ion Scattering Studies of Surfaces and Thin Films

这个实验研究项目是在基于离子束散射的表面分析领域。第一个项目的重点是研究在超高真空的高温下，在银和铜表面的两个最外层之间观察到的意想不到的大间距。对这种膨胀效应的研究将扩展到双星系统，并将与最近产生的理论预测进行比较。第二个主要项目是研究氧化的初始阶段，即氧化生长的第一个1 - 10nm，利用自经典氧化研究以来取得的表面分析技术的巨大进步。重点是生长的机制和产生的氧化物的微观结构。广泛的系统，包括Si， Ni, Al, Cu， Ge和SiC将被研究。各种额外的工具，包括STM， AFM和光电子能谱将在项目中使用。主要的实验工具是高分辨率的中能离子散射，它可以提供表面结构、生长机制和动力学的信息。%%%%本实验研究使用先进的表面科学仪器，在原子水平上研究金属和半导体上氧化膜生长的过程。氧化物生长在广泛的技术领域中具有巨大的重要性，例如在硅技术中，栅极氧化物是核心，到金属（如铝）的钝化层。以前的研究受到实验技术和设备的限制，留下了许多关于氧化如何发生的问题，特别是在最初的几个原子层。这项实验研究将主要依赖于中能离子散射，辅以其他技术，包括扫描隧道显微镜和原子力显微镜。在这个项目中感兴趣的材料是Si， Ni, Al, Cu， Ge和SiC。这项研究的结果可能包括不同寻常的新效应，这些效应可能会在技术上得到应用。该研究项目是跨学科性质的，涉及研究生和研究生，他们将接受良好的培训，进入工业，政府或教育岗位。* * *

w:\awards\awards96\num.doc 9705367 Gustafsson This experimental research project is in the area of surface analysis based on the use of ion beam scattering. A first project centers on study of the unexpectedly large spacing observed between the two outermost layers on surfaces of Ag and Cu, at elevated temperatures in ultra high vacuum. Study of this expansion effect will be extended to binary systems, and will be compared with recently generated theoretical predictions. The second major project is a study of initial stages of oxidation, the first 1 - 10nm of oxide growth, making use of great advances in surface analysis techniques that have been made since classic oxidation studies. Emphasis is on the mechanism of growth and the microstructure of the resulting oxide. A wide range of systems, including Si, Ni, Al, Cu, Ge and SiC will be studied. A variety of additional tools, including STM, AFM and photoelectron spectroscopy will be employed in the project. The primary experimental tool is high-resolution medium energy ion scattering, which can provide information on surface structure, growth mechanisms, and kinetics. %%%% This experimental research uses advance surface science instrumentation to study at the atomic level the process of oxide film growth on metals and semiconductors. Oxide growth is of immense importance in wide areas of technology, for example in the silicon technology where gate oxides are central, to passivation layers on metals such as aluminum. Previous studies have been limited in the availability of experimental techniques and equipment, leaving many questions on how oxidation occurs, especially during the first few atomic layers. This experimental study will depend primarily upon medium energy ion scattering, supplemented by other techniques including scanning tunneling microscopy and atomic fo rce microscopy. Materials of interest in this project are Si, Ni, Al, Cu, Ge and SiC. Results from this research may include unusual new effects which may find application in technology. This research project is interdisciplinary in nature and involves graduate and postgraduate students who will be excellently trained to enter positions in industry, government or education. ***