Medium Energy Ion Scattering Studies of Thin Films

薄膜的中能离子散射研究

• 批准号: 0218406
• 负责人: Torgny Gustafsson
• 金额: $ 36万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-01 至 2006-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0218406&HistoricalAwards=false
• 关键词: Medium; Energy; Ion; Scattering; Studies

This project addresses fundamental issues of structure, composition, growth and reactivity on tech-nologically relevant thin films. The research explores film and interface behavior of ultrathin oxides in the critical 1-10 nm thickness range. Plans include growth and analysis of films grown on Si, Ge and SiC. The primary technique employed is high-resolution medium energy ion scat-tering (MEIS), enabling accurate determination of composition as a function of depth, and, in some cases, precise structure determinations. The MEIS experiments will be complemented with infrared absorption spectroscopy, scanning tunneling microscopy, atomic force microscopy, and photoelectron spectroscopy. Some aspects will be done in collaboration with industrial scientists at Bell Labs and elsewhere. The project also addresses fundamental studies of ion-surface inter-actions, specifically the effect of electronic excitation processes on ion scattering spectra as the film thickness drops below one nanometer. The aim is to provide fundamental understanding of high-resolution depth profiling of surfaces and ultrathin films. This work will be done in close collaboration with theorists. The broader technological impact of this work results from devel-opment of a microscopic understanding of thin film growth and of new experimental and theo-retical tools. A new level of conceptual understanding, based on atomic concepts, is expected to emerge which will aid in the continued development of electronics. %%% The project addresses fundamental research issues in areas of electronic materials science and condensed matter physics having technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. The research program provides excellent opportunities for hands-on experience in the use of sophisticated sci-entific equipment. The combined resources, including experimental and theoretical methods, provide special opportunities for education and training of post doctoral associates, graduate and undergraduate students involved in highly interdisciplinary forefront research. The direct and visually oriented nature of the information obtained facilitates communication of the excitement of surface and materials science to undergraduates as well as middle and high school students.***

该项目解决了与技术相关的薄膜的结构、成分、生长和反应性的基本问题。本研究探讨了临界厚度范围为1-10 nm的氧化物薄膜和界面行为。计划包括Si、Ge和SiC上生长的薄膜的生长和分析。所采用的主要技术是高分辨率中能离子散射（MEIS），能够准确确定组成作为深度的函数，并在某些情况下，精确的结构测定。MEIS实验将与红外吸收光谱、扫描隧道显微镜、原子力显微镜和光电子能谱相结合。有些方面将与贝尔实验室和其他地方的工业科学家合作完成。该项目还涉及离子-表面相互作用的基础研究，特别是当膜厚度降至1纳米以下时，电子激发过程对离子散射光谱的影响。其目的是提供基本的理解，高分辨率的深度剖析的表面和薄膜。这项工作将与理论家密切合作进行。这项工作的更广泛的技术影响来自于对薄膜生长的微观理解和新的实验和理论工具的发展。基于原子概念的新的概念理解水平有望出现，这将有助于电子学的持续发展。该项目涉及电子材料科学和凝聚态物理领域的基础研究问题，具有技术相关性。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。该研究计划提供了良好的机会，在使用先进的科学设备的实践经验。合并后的资源，包括实验和理论方法，为从事高度跨学科前沿研究的博士后助理，研究生和本科生的教育和培训提供了特殊的机会。所获得的信息的直接和视觉导向的性质促进了表面和材料科学的兴奋本科生以及初中和高中学生的沟通。