Novel Materials for Microelectronics

技术支持：该项目涉及到对半导体材料上的薄介电膜的成分和结构的原子级理解，重点是材料的掩埋界面。该方法包括外延生长和分析的高介电常数薄膜的Ge，GaAs和InGaAs合金。中能离子散射实验在表征中起着核心作用，并与扫描探针显微镜、扫描透射电子显微镜、光电子能谱和电学测量相补充和相关;同位素实验也将在特殊情况下进行，以评估生长过程中原子物种的迁移率。该项目将受益于与工业科学家建立的合作关系。非技术性：该项目旨在从原子水平理解电子产品中的材料界面对工业过程的影响。这项研究为本科生和研究生在开发和使用先进的科学设备方面提供了实践经验的绝佳机会。它还将通过与工业界和拉丁美洲的科学家合作，拓宽他们的科学视野。作为该项目的一部分，将开展由中学生及其教师参与的外联活动，以构建和使用学习模块。将获得直接和视觉导向的信息，以传达材料科学的理解和兴奋的学生和教师。

Technical: The project involves addresses atomic level understanding of composition and structure of thin dielectric films on semiconductor materials, with emphasis on buried interfaces of materials. The approach includes epitaxial growth and analysis of high dielectric constant films on Ge, GaAs and InGaAs alloys. Medium energy ion scattering experiments play a central role in characterization, and are complemented and correlated with scanning probe microscopy, scanning transmission electron microscopy, photoelectron spectroscopy, and electrical measurements; isotope experiments will also be conducted in special circumstances to assess mobility of atomic species during growth. The project will benefit from established collaborations with industrial scientists.Non-technical: This project aims to develop an atomic level understanding of materials interfaces in electronics with impact on industrial processes. The research provides excellent opportunities for hands-on experience for undergraduate and graduate students in the development and use of sophisticated scientific equipment. It will also broaden their scientific horizons through collaborations with scientists in industry and from Latin America. Outreach activities involving middle school students and their teachers constructing and using learning modules will be conducted as part of this project. Direct and visually oriented information will be obtained to communicate understanding and excitement of materials science to students and teachers.