Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors

9708653 Stickney该项目由DMR电子材料和CHE分析和表面化学计划支持，解决了半导体薄膜的电化学原子层外延（ECALE），以及电化学数字蚀刻的逆过程，通过控制电化学电势一次去除单层材料。该方法采用超高真空表面分析技术，以确定和调查表面限制的反应。从电化学表面限制过程中产生的表面的结构和组成将作为相关条件，如电位和溶液组成的函数进行研究。研究的一个重要方向是跟踪缺陷的演化，逐原子层。 该项目代表了材料科学独特主题领域的创新前沿研究，具有很高的技术相关性潜力。 该研究将在基础层面上为电化学的重要方面以及新沉积和蚀刻工艺的控制提供基础材料科学知识，这些工艺具有降低温度操作的优势，并以降低的成本处理电子/光子材料。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9708653 Stickney This project, supported by the DMR Electronic Materials and CHE Analytical and Surface Chemistry programs, addresses electrochemical atomic layer epitaxy(ECALE) of semiconductor films, as well as the inverse process of electrochemical digital etching, removal of material a monolayer at a time through control of electrochemical potential. The approach employs UHV surface analysis techniques to identify and investigate surface limited reactions. The structure and composition of surfaces resulting from electrochemical surface limited processes will be investigated as a function of relevant conditions such as the potential and solution composition. One of the important thrusts of the research is to follow the evolution of defects, atomic layer by atomic layer. %%% This project represents innovative, forefront research in a unique topical area of materials science having high potential for technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electrochemistry and to the control of new deposition and etching processes with advantages of reduced temperature operation, and processing of electronic/photonic materials at reduced costs. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***