Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors

该项目由DMR电子材料和CHE分析和表面化学项目支持，研究半导体薄膜的电化学原子层外延（ECALE），以及电化学数字蚀刻的逆过程，通过控制电化学电位一次去除一层材料。该方法采用特高压表面分析技术来识别和研究表面有限反应。由电化学表面限制过程产生的表面结构和组成将作为电位和溶液组成等相关条件的函数进行研究。研究的一个重要重点是跟踪缺陷的演变，原子层到原子层。该项目代表了材料科学独特主题领域的创新前沿研究，具有很高的技术相关性潜力。该研究将在基础水平上为电化学的重要方面和新的沉积和蚀刻工艺的控制提供基础材料科学知识，并具有降低温度操作的优势，以及以更低的成本加工电子/光子材料。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9708653 Stickney This project, supported by the DMR Electronic Materials and CHE Analytical and Surface Chemistry programs, addresses electrochemical atomic layer epitaxy(ECALE) of semiconductor films, as well as the inverse process of electrochemical digital etching, removal of material a monolayer at a time through control of electrochemical potential. The approach employs UHV surface analysis techniques to identify and investigate surface limited reactions. The structure and composition of surfaces resulting from electrochemical surface limited processes will be investigated as a function of relevant conditions such as the potential and solution composition. One of the important thrusts of the research is to follow the evolution of defects, atomic layer by atomic layer. %%% This project represents innovative, forefront research in a unique topical area of materials science having high potential for technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electrochemistry and to the control of new deposition and etching processes with advantages of reduced temperature operation, and processing of electronic/photonic materials at reduced costs. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***