Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors

9708653 Stickney这个项目由DMR电子材料和CHE分析和表面化学计划支持，研究半导体薄膜的电化学原子层外延，以及电化学数字蚀刻的反向过程，通过控制电化学电位一次去除一层材料。该方法使用超高真空表面分析技术来识别和研究表面限制反应。由电化学表面限制过程产生的表面的结构和组成将作为相关条件(如电位和溶液组成)的函数进行研究。研究的一个重要方向是逐层原子层跟踪缺陷的演化。这个项目代表了材料科学独特主题领域的创新前沿研究，具有很高的技术相关性。这项研究将在基础水平上为电化学的重要方面贡献基础材料科学知识，并控制新的沉积和蚀刻工艺，其优点是降低温度操作，以及以更低的成本加工电子/光子材料。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9708653 Stickney This project, supported by the DMR Electronic Materials and CHE Analytical and Surface Chemistry programs, addresses electrochemical atomic layer epitaxy(ECALE) of semiconductor films, as well as the inverse process of electrochemical digital etching, removal of material a monolayer at a time through control of electrochemical potential. The approach employs UHV surface analysis techniques to identify and investigate surface limited reactions. The structure and composition of surfaces resulting from electrochemical surface limited processes will be investigated as a function of relevant conditions such as the potential and solution composition. One of the important thrusts of the research is to follow the evolution of defects, atomic layer by atomic layer. %%% This project represents innovative, forefront research in a unique topical area of materials science having high potential for technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electrochemistry and to the control of new deposition and etching processes with advantages of reduced temperature operation, and processing of electronic/photonic materials at reduced costs. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***