Condensed Phase Atomic Layer Deposition (CP-ALD)

凝聚相原子层沉积 (CP-ALD)

• 批准号: 1006747
• 负责人: John Stickney
• 金额: $ 44.5万
• 依托单位: University of Georgia Research Foundation Inc
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-06-01 至 2013-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006747&HistoricalAwards=false
• 关键词: Condensed; Phase; Atomic; Layer; Deposition

Technical: This project addresses fundamental electronic/photonic materials science synthesis/processing research to achieve condensed phase (CP) atomic layer deposition (ALD) for formation of semiconductor grade (purity, crystallinity) conformal nanoscale films with atomic level control. The key feature of ALD is that limited reactions are used to control the deposition rate, not the time or flux; those reactions are used in a cycle, where an atomic layer or monolayer (ML) is deposited each cycle. Growth is then a function of the cycle chemistry and the number of cycles used. The reactions are controlled by a limiting reagent, generally the deposit surface area. While the vast majority of ALD is performed using gas or vacuum phase processes, this project takes an electrochemistry condensed phase (CP) approach to atomic level control of electronic materials synthesis/processing. The main thrust is exploration of CP-ALD chemistry formation of high quality junctions needed for device fabrication, e.g., the formation of multijunction photovoltaics (PV). Conformal deposition of nanoscale films of semiconductors, metals and insulators on insulators, metals and semiconductors are included. The work aims to increase the diversity of materials which can be formed using CP-ALD. Deposition of compounds and metals on conducting surfaces has been successful. Ideas concerning the deposition of nanofilms on insulators, and of oxides or insulators will be studied. In addition, continued work concerning deposition of metals, elemental semiconductors, and compounds on each other will be extended. Systems proposed for study are from the areas of microelectronics, memory and photovoltaics. Non-technical: The project addresses basic research issues in a topical area of materials science with technological relevance in electronics and photonics. The primary impact of this project will be study and development of CP-ALD, in order to provide alternative methodologies to the gas and vacuum based electronic materials synthesis and processing techniques. Dissemination of research results will be by creation of a Wiki, or specialized web page, dedicated to CP-ALD methods, results, equipment, and the ancillary knowledge required to form such deposits. The PI actively addresses increasing diversity within science and engineering. The project is interdisciplinary, providing graduate and undergraduate students with advantageous opportunities to do research that bridges basic research and application, and research across traditional fields of materials science, chemistry, and engineering. In addition to experiencing, and contributing to an important topic centered in unique materials research, they will learn basic skills required in the use of electronic materials characterization tools.

技术支持：该项目致力于基础电子/光子材料科学合成/加工研究，以实现凝聚相（CP）原子层沉积（ALD），用于形成具有原子级控制的半导体级（纯度，结晶度）共形纳米级薄膜。ALD的关键特征是使用有限的反应来控制沉积速率，而不是时间或通量;这些反应用于一个循环中，其中每个循环沉积原子层或单层（ML）。因此，生长是循环化学和所用循环次数的函数。反应受限制试剂控制，通常是存款表面积。虽然绝大多数ALD是使用气相或真空相工艺进行的，但该项目采用电化学凝聚相（CP）方法来控制电子材料合成/加工的原子水平。主要的推动力是探索CP-ALD化学形成器件制造所需的高质量结，例如，多结光致发光（PV）的形成。包括在绝缘体、金属和半导体上的半导体、金属和绝缘体的纳米级膜的共形沉积。这项工作旨在增加可以使用CP-ALD形成的材料的多样性。化合物和金属在导电表面上的沉积已经成功。将研究有关在绝缘体上沉积纳米薄膜以及氧化物或绝缘体的想法。此外，关于金属、元素半导体和化合物相互沉积的持续工作将得到扩展。建议研究的系统来自微电子学、存储器和光电子学领域。非技术性：该项目涉及材料科学专题领域的基础研究问题，与电子和光子学技术相关。该项目的主要影响将是研究和开发CP-ALD，以提供基于气体和真空的电子材料合成和加工技术的替代方法。研究结果的传播将通过创建一个Wiki或专门的网页，专门介绍CP-ALD方法，结果，设备和形成此类存款所需的辅助知识。 PI积极应对科学和工程领域日益增长的多样性。该项目是跨学科的，为研究生和本科生提供了有利的机会，可以进行基础研究和应用研究，以及材料科学，化学和工程等传统领域的研究。除了体验，并有助于在独特的材料研究为中心的一个重要课题，他们将学习使用电子材料表征工具所需的基本技能。