Condensed Phase Atomic Layer Deposition (CP-ALD)

技术：该项目致力于基础电子/光子材料科学合成/处理研究，以实现凝聚相(CP)原子层沉积(ALD)，以形成具有原子能级控制的半导体级(纯度、结晶度)共形纳米薄膜。ALD的主要特点是使用有限的反应来控制沉积速度，而不是时间或流量；这些反应用于一个周期，每个周期沉积一个原子层或单分子膜(ML)。因此，生长是周期化学和所用周期数量的函数。反应由一种限制剂控制，通常是沉积表面积。虽然绝大多数ALD是使用气体或真空相工艺进行的，但该项目采用了电化学凝聚相(CP)方法来控制电子材料合成/加工的原子水平。主要目的是探索CP-ALD化学形成器件制造所需的高质量结，例如，形成多结光伏(PV)。包括在绝缘体、金属和半导体上共形沉积半导体、金属和绝缘体的纳米级薄膜。这项工作的目的是增加使用CP-ALD可以形成的材料的多样性。在导电表面沉积化合物和金属是成功的。关于在绝缘体和氧化物或绝缘体上沉积纳米薄膜的想法将被研究。此外，关于金属、元素半导体和化合物相互沉积的持续工作将得到延长。拟研究的系统来自微电子、存储器和光伏领域。非技术性：该项目解决与电子和光子学技术相关的材料科学专题领域的基础研究问题。该项目的主要影响将是CP-ALD的研究和开发，以便为基于气体和真空的电子材料合成和加工技术提供替代方法。研究成果的传播将通过创建Wiki或专门的网页，专门介绍CP-ALD的方法、结果、设备和形成此类矿藏所需的辅助知识来实现。国际和平研究所积极应对科学和工程领域日益增加的多样性。该项目是跨学科的，为研究生和本科生提供了有利的机会进行连接基础研究和应用的研究，以及跨越材料科学、化学和工程等传统领域的研究。除了体验并为以独特材料研究为中心的重要课题做出贡献外，他们还将学习使用电子材料表征工具所需的基本技能。

Technical: This project addresses fundamental electronic/photonic materials science synthesis/processing research to achieve condensed phase (CP) atomic layer deposition (ALD) for formation of semiconductor grade (purity, crystallinity) conformal nanoscale films with atomic level control. The key feature of ALD is that limited reactions are used to control the deposition rate, not the time or flux; those reactions are used in a cycle, where an atomic layer or monolayer (ML) is deposited each cycle. Growth is then a function of the cycle chemistry and the number of cycles used. The reactions are controlled by a limiting reagent, generally the deposit surface area. While the vast majority of ALD is performed using gas or vacuum phase processes, this project takes an electrochemistry condensed phase (CP) approach to atomic level control of electronic materials synthesis/processing. The main thrust is exploration of CP-ALD chemistry formation of high quality junctions needed for device fabrication, e.g., the formation of multijunction photovoltaics (PV). Conformal deposition of nanoscale films of semiconductors, metals and insulators on insulators, metals and semiconductors are included. The work aims to increase the diversity of materials which can be formed using CP-ALD. Deposition of compounds and metals on conducting surfaces has been successful. Ideas concerning the deposition of nanofilms on insulators, and of oxides or insulators will be studied. In addition, continued work concerning deposition of metals, elemental semiconductors, and compounds on each other will be extended. Systems proposed for study are from the areas of microelectronics, memory and photovoltaics. Non-technical: The project addresses basic research issues in a topical area of materials science with technological relevance in electronics and photonics. The primary impact of this project will be study and development of CP-ALD, in order to provide alternative methodologies to the gas and vacuum based electronic materials synthesis and processing techniques. Dissemination of research results will be by creation of a Wiki, or specialized web page, dedicated to CP-ALD methods, results, equipment, and the ancillary knowledge required to form such deposits. The PI actively addresses increasing diversity within science and engineering. The project is interdisciplinary, providing graduate and undergraduate students with advantageous opportunities to do research that bridges basic research and application, and research across traditional fields of materials science, chemistry, and engineering. In addition to experiencing, and contributing to an important topic centered in unique materials research, they will learn basic skills required in the use of electronic materials characterization tools.