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Formation of Germanene, the Ge Analog of Graphene, using Electrochemical Atomic Layer Deposition (E-ALD)

Formation of Germanene, the Ge Analog of Graphene, using Electrochemical Atomic Layer Deposition (E-ALD)
使用电化学原子层沉积 (E-ALD) 形成锗烯(石墨烯的 Ge 类似物)
批准号:
1410109
负责人:
John Stickney
金额:
$39.37万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-08-01 至 2018-07-31

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中文摘要
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英文摘要
Non-technical Description: This project involves the formation of a new material with unique properties that could potentially be used to develop and improve on a range of functional devices. One of the most exciting new materials is called graphene, atomically thin sheets of carbon in the shape of "chicken wire" with properties never seen before. It is anticipated that radio-frequency devices will improve dramatically when graphene is incorporated. Calculations suggest that silicon and germanium may form analogs of graphene: silicene and germanene, respectively. However, stand-alone sheets of those materials have not been realized in laboratories. Most attempts to form them have involved high temperatures. Work by this research team has involved the use of electrodeposition, a room-temperature growth technique, and the results so far have been encouraging. The primary importance of this project, besides the formation of germanene, is the training of future scientists. This research group is composed of a mix of undergraduate and graduate students, half of whom are women. Results of this project are published in the peer reviewed literature and described in presentations at national and international scientific meetings.Technical Description: This research project is on the growth and characterization of germanene, the Ge analog of graphene. Ab initio calculations have indicated that germanene should be stable and have properties similar to graphene. Formation of germanene has not yet been reported in the literature, however. The Si analog of graphene, silicene, has been reported, though only as single atomic layers of covalently bound Si on metal surfaces in vacuum. This project involves developing chemical methods to grow germanene nanofilms via the electrochemical analog of atomic layer deposition (E-ALD), and determining the mechanism for its growth and optimization. Characterization of the structure, morphology and composition of deposits is performed with surface analytical methods such as photoelectron spectroscopy, low energy electron diffraction, in-situ scanning tunneling microscopy, as well as with thin film techniques such as microprobe, X-ray diffraction, transmission electron microscopy, and Raman spectroscopy (including in-situ Raman measurements). The project also attempts to develop methods for removing germanene from the substrate so that its intrinsic properties can be better measured.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
Hydrogen Sorption Kinetics on Bare and Platinum-Modified Palladium Nanofilms, Grown by Electrochemical Atomic Layer Deposition (E-ALD)
通过电化学原子层沉积 (E-ALD) 生长的裸钯纳米膜和铂改性钯纳米膜的氢吸附动力学
DOI: 10.1149/2.0051612jes
发表时间: 2016
期刊: Journal of The Electrochemical Society
影响因子: 3.9
作者: [Jagannathan, Kaushik, Benson, David M., Robinson, David B., Stickney, John L.]
通讯作者: Stickney, John L.
DOI: 10.1149/2.1221707jes
发表时间: 2017-05
期刊: Journal of The Electrochemical Society
影响因子: 3.9
作者: [Maria Ledina;N. Bui;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;J. Drnec;F. Carlá;M. Soriaga;T. Reber;J. Stickney]
通讯作者: Maria Ledina;N. Bui;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;J. Drnec;F. Carlá;M. Soriaga;T. Reber;J. Stickney
DOI: 10.1149/06606.0129ecst
发表时间: 2015-04
期刊:
影响因子: --
作者: [Maria Ledina;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;M. Soriaga;J. Stickney]
通讯作者: Maria Ledina;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;M. Soriaga;J. Stickney
Condensed Phase Atomic Layer Deposition (CP-ALD)
Metal Semiconductor Interface Growth Using Electrochemical Atomic Layer Deposition (ALD)
Structure Control in Electrochemical Atomic Layer Eptiaxy
NER: Electrodeposition of Nanostructured Compound Semiconductors
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