Metal Semiconductor Interface Growth Using Electrochemical Atomic Layer Deposition (ALD)

使用电化学原子层沉积 (ALD) 进行金属半导体界面生长

基本信息

项目摘要

Technical: This project aims for further understanding and demonstration of electrochemical atomic layer deposition (ALD) for the formation of high quality solid state nanostructures under ambient conditions (aqueous solutions). Electrochemical ALD is where surface limited electrochemical reactions such as underpotential deposition (UPD) are used for ALD. Metal and semiconductor solid state interfaces: metal/metal, semiconductor/metal, metal/semiconductor, and semiconductor/semiconductor, will be formed atomic layer by atomic layer and characterized during ALD growth using surface science methodologies. Outcomes expected are an expanded understanding of electrochemical ALD, and practical information about which materials can be grown, on which substrates and with what quality. The study of a new type of electrochemical surface limited reaction, surface limited redox replacement (SLRR), allowing ALD formation of metals will also be pursued to explore interface formation using ultra high vacuum (UHV) surface analysis techniques such as LEED, Auger, and XPS. In-situ STM will be used to follow surface atomic structure. Nanostructure formation will be performed in a thin layer flow electrodeposition system, and characterized in-situ using an electrochemical quartz crystal microbalance (EQCM) flow cell system, as well as using an in-situ STM flow cell system. Interfaces are a primary component of layered electronic and photonic materials, and thus can be atomic and electronic structure determining factors. Studies of the layer by layer growth of solid state interfaces has been limited primarily to molecular beam epitaxy (MBE), in ultrahigh vacuum, at high temperatures. These studies will be the first systematic investigations of layer by layer growth of metal and semiconductor solid state interfaces as they form in aqueous solutions at room temperature. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance, and is expected to provide unique opportunities for graduate and undergraduate student training in interdisciplinary research across materials science, chemistry, and surface physics. Educational impacts of this project involve minority students at the graduate, undergraduate, and pre high school levels. The PI has an established record of working with minorities, having taught six minority undergraduate students, and had six minority graduate students, two of which are currently in his group, and two have gone on to faculty positions at research institutions. At the pre high school level, the PI has begun a program 'Drum Majors for Science' (DMS) designed to bring science into predominantly minority elementary schools to capture the minds of young students while they are still interested in science, before they move on through middle and High school. He plans to incorporate faculty, graduate, and undergraduate students in repeated visits. Presentations are to involve short power point lectures, demonstrations, hands on experiments, and general question and answer time to stimulate and encourage student curiosity.
技术:该项目旨在进一步了解和演示电化学原子层沉积(ALD),以在环境条件(水溶液)下形成高质量固态纳米结构。电化学 ALD 是指将表面受限的电化学反应(例如欠电势沉积 (UPD))用于 ALD。金属和半导体固态界面:金属/金属、半导体/金属、金属/半导体和半导体/半导体,将逐个原子层形成,并在 ALD 生长过程中使用表面科学方法进行表征。预期的结果是加深对电化学 ALD 的理解,以及有关可以生长哪些材料、在哪些基材上以及以何种质量生长的实用信息。新型电化学表面有限反应、表面有限氧化还原置换 (SLRR) 的研究,允许 ALD 形成金属,也将利用超高真空 (UHV) 表面分析技术(如 LEED、俄歇和 XPS)探索界面形成。原位 STM 将用于追踪表面原子结构。纳米结构的形成将在薄层流电沉积系统中进行,并使用电化学石英晶体微天平 (EQCM) 流通池系统以及使用原位 STM 流通池系统进行原位表征。界面是层状电子和光子材料的主要组成部分,因此可以是原子和电子结构的决定因素。对固态界面逐层生长的研究主要限于在超高真空、高温下的分子束外延 (MBE)。这些研究将是对金属和半导体固态界面在室温下在水溶液中形成时逐层生长的首次系统研究。非技术性:该项目解决具有高技术相关性的材料科学主题领域的基础研究问题,预计为研究生和本科生在材料科学、化学和表面物理的跨学科研究方面的培训提供独特的机会。该项目的教育影响涉及研究生、本科生和高中预科阶段的少数族裔学生。该项目负责人有着与少数族裔合作的良好记录,曾教过六名少数族裔本科生,并有六名少数族裔研究生,其中两人目前在他的小组中,另外两人已在研究机构担任教职。在高中前阶段,PI 启动了一项“科学鼓专业”(DMS) 计划,旨在将科学带入以少数族裔为主的小学,以在年轻学生升入初中和高中之前吸引他们对科学仍然感兴趣的想法。他计划让教职员工、研究生和本科生进行多次访问。演示将包括简短的幻灯片讲座、演示、动手实验以及一般问答时间,以激发和鼓励学生的好奇心。

项目成果

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John Stickney其他文献

John Stickney的其他文献

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{{ truncateString('John Stickney', 18)}}的其他基金

Formation of Germanene, the Ge Analog of Graphene, using Electrochemical Atomic Layer Deposition (E-ALD)
使用电化学原子层沉积 (E-ALD) 形成锗烯(石墨烯的 Ge 类似物)
  • 批准号:
    1410109
  • 财政年份:
    2014
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
Condensed Phase Atomic Layer Deposition (CP-ALD)
凝聚相原子层沉积 (CP-ALD)
  • 批准号:
    1006747
  • 财政年份:
    2010
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
Structure Control in Electrochemical Atomic Layer Eptiaxy
电化学原子层外延中的结构控制
  • 批准号:
    0312130
  • 财政年份:
    2003
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
NER: Electrodeposition of Nanostructured Compound Semiconductors
NER:纳米结构化合物半导体的电沉积
  • 批准号:
    0210506
  • 财政年份:
    2002
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Standard Grant
Surface Chemistry Studies During Thin-Film Growth Using Electrochemical Atomic Layer Epitaxy (EC-ALE)
使用电化学原子层外延 (EC-ALE) 进行薄膜生长过程中的表面化学研究
  • 批准号:
    0075868
  • 财政年份:
    2000
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors
化合物半导体电化学原子层加工中的表面有限反应
  • 批准号:
    9708653
  • 财政年份:
    1997
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
Compound Semiconductor Electrodeposition by Electrochemical Atomic Layer Epitaxy
电化学原子层外延化合物半导体电沉积
  • 批准号:
    9400570
  • 财政年份:
    1994
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant
Electrochemical Atomic Layer Epitaxy
电化学原子层外延
  • 批准号:
    9017431
  • 财政年份:
    1991
  • 资助金额:
    $ 48.86万
  • 项目类别:
    Continuing Grant

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Excited-State Interaction at the Interface of Semiconductor and Adsorbed Metal Complex
半导体与吸附金属络合物界面处的激发态相互作用
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    16K14547
  • 财政年份:
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利用金属/半导体界面电子过滤效应开发热电材料
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直接观察金属/半导体界面附近半导体缺陷结构周围的电势分布
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界面钝化对金属/半导体界面能带排列影响的研究
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金属纳米颗粒-半导体界面等离激元诱导电子注入研究
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