Electrochemical Atomic Layer Epitaxy

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This proposal represents a novel approach to room temperature growth/deposition of semiconductor materials. The method is based on electrochemistry, and is named ECALE--Electrochemical Atomic Layer Epitaxy. Polycrystalline materials have been deposited by electrochemical means previously; this project will employ alternated electrodeposition of monolayers in an attempt to achieve epitaxial growth. Specially processed and cleaned single crystal substrates will be used; the substrates and the deposited films will be characterized by LEED, AES, HREELS, and STM along with more routine optical and electron microscopy.