Electrochemical Atomic Layer Epitaxy

电化学原子层外延

• 批准号: 9017431
• 负责人: John Stickney
• 金额: $ 15万
• 依托单位: University of Georgia Research Foundation Inc
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-02-01 至 1994-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9017431&HistoricalAwards=false
• 关键词: Electrochemical; Atomic; Layer; Epitaxy

This proposal represents a novel approach to room temperature growth/deposition of semiconductor materials. The method is based on electrochemistry, and is named ECALE--Electrochemical Atomic Layer Epitaxy. Polycrystalline materials have been deposited by electrochemical means previously; this project will employ alternated electrodeposition of monolayers in an attempt to achieve epitaxial growth. Specially processed and cleaned single crystal substrates will be used; the substrates and the deposited films will be characterized by LEED, AES, HREELS, and STM along with more routine optical and electron microscopy.

这一建议代表了一种新的方法，室温 半导体材料的生长/沉积。 该方法是基于 在电化学，并命名为ECALE-电化学原子 层外延。 多晶材料已通过沉积 电化学手段以前;该项目将采用 单层的交替电沉积， 外延生长 经过特殊处理和清洗的单晶 将使用衬底;衬底和沉积膜 将通过LEED，AES，HREELS和STM沿着更多 常规光学和电子显微镜检查。