Structure Control in Electrochemical Atomic Layer Eptiaxy
Structure Control in Electrochemical Atomic Layer Eptiaxy
批准号:
0312130
负责人:
John Stickney
金额:
$42.28万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-08-01 至 2007-07-31
中文摘要
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英文摘要
The long term objective of this project is to gain fundamental understanding of compound semiconductor electrodeposition and to achieve deposition of compound semiconductor thin film structures with the quality and control necessary to form optoelectronic devices. The methodology proposed for these studies is electrochemical atomic layer epitaxy (ECALE), the electrochemical analog of atomic layer epitaxy (ALE), where surface limited reactions are used to form a material, one atomic layer at a time. Underpotential deposition, upd, is another name for a surface limited electrochemical reaction. It is a phenomenon where an atomic layer of one element is deposited on a second at a potential prior to that needed to deposit the first on itself. The driving force is formation of a surface compound, and the free energy of compound formation. Using upd in an ALE cycle, deposits are formed at or near equilibrium, a monolayer at a time. An atomic layer of each element is deposited in turn, in a cycle, to form a monolayer of the compound. The number of cycles determines the thickness of the deposit. A major benefit of ECALE is that it breaks compound electrodeposition into a series of fundamental steps, allowing their independent investigation and control. ECALE studies are the most direct route to the mechanisms of compound electrodeposition. Questions to be addressed include: How much control can be obtained in the electrochemical formation of compound semiconductor device structures? What types of electrochemical reactions can be used to create an ALE cycle? Can the deposit habit be altered by using different substrate or by changing the deposition parameters? Can ternary compounds be formed? Can programs be developed to form graded deposits as buffer layers, or to help with lattice matching issues. What types of electrochemical reactions can be used to create an ALE cycle? Can doping be controlled in compound electrodeposition? Can both p and n type materials be formed? An automated flow deposition system is used to form deposits using ECALE, where potentials and solution changes are controlled by computer. Methodologies for characterization include in-situ electrochemical scanning tunneling microscopy (ECSTM), electrochemical quartz crystal microbalance (EQCM), ultrahigh vacuum electrochemistry (UHV-EC) for studies of deposit surfaces, as well as reflection, absorption, luminescence, photoelectrochemical, photoconductivity, and Hall measurements for studies of physical and electronic properties. %%% An important feature of the project is in education and human resource development through the integration of research and education. The project involves graduate and undergraduate students with participants at all levels interacting with each other and the principal investigator (PI) on a regular basis. Two of the five students working in the PI's group are from under-represented groups, and will be supported by this award. Students are actively involved in publishing papers and presenting talks and posters at professional society meetings. Most of the PI's students have over five presentations on their vitae before they graduate. It is also intended to construct a web page on ECALE, where students design and build various sections, with the intent of forming a page where the present status of ECALE can be found. The page will include descriptions of how to form deposits using ECALE, listings of publications by all groups working in the area, methodologies, instrument designs, as well as programs written in lab view for controlling deposition, accessible by anyone interested in the method. ***
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Formation of Germanene, the Ge Analog of Graphene, using Electrochemical Atomic Layer Deposition (E-ALD)
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批准号:1410109
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项目类别:Continuing Grant
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资助金额:$39.37万
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财政年份:2014
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负责人:John Stickney
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依托单位:
Condensed Phase Atomic Layer Deposition (CP-ALD)
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批准号:1006747
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资助金额:$44.5万
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财政年份:2010
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负责人:John Stickney
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依托单位:
Metal Semiconductor Interface Growth Using Electrochemical Atomic Layer Deposition (ALD)
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批准号:0704142
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项目类别:Continuing Grant
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资助金额:$48.86万
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财政年份:2007
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负责人:John Stickney
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依托单位:
NER: Electrodeposition of Nanostructured Compound Semiconductors
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批准号:0210506
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项目类别:Standard Grant
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资助金额:$9.98万
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财政年份:2002
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负责人:John Stickney
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依托单位:
Surface Chemistry Studies During Thin-Film Growth Using Electrochemical Atomic Layer Epitaxy (EC-ALE)
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批准号:0075868
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项目类别:Continuing Grant
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资助金额:$37.66万
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财政年份:2000
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负责人:John Stickney
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依托单位:
Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors
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批准号:9708653
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项目类别:Continuing Grant
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资助金额:$25.26万
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财政年份:1997
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负责人:John Stickney
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依托单位:
Compound Semiconductor Electrodeposition by Electrochemical Atomic Layer Epitaxy
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批准号:9400570
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项目类别:Continuing Grant
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资助金额:$23.46万
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财政年份:1994
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负责人:John Stickney
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依托单位:
Electrochemical Atomic Layer Epitaxy
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批准号:9017431
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项目类别:Continuing Grant
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资助金额:$15.0万
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财政年份:1991
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负责人:John Stickney
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依托单位:
国内基金
海外基金
Cortical control of internal state in the insular cortex-claustrum region
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批准号:--
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项目类别:--
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资助金额:25万元
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批准年份:2020
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负责人:Robert Konrad Naumann
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依托单位: