Compound Semiconductor Electrodeposition by Electrochemical Atomic Layer Epitaxy
电化学原子层外延化合物半导体电沉积
基本信息
- 批准号:9400570
- 负责人:
- 金额:$ 23.46万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1994
- 资助国家:美国
- 起止时间:1994-06-15 至 1997-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9400570 Stickney Fundamental research studies to investigate thin-layer electrochemical atomic layer epitaxy(ECALE) of compound semiconductor materials will be conducted. In ECALE the substrate's electrochemical potential is used to control the deposition process. The phenomenon of underpotential deposition, whereby an atomic layer of an element forms at an electrochemical potential lower than that needed to deposit the element on itself, is exploited and used to deposit compound semiconductor materials atomic layer by layer. Each deposition cycle consists of a sequence involving solution introduction, potential changes, and rinsing. The current research effort involves detailed studies to determine and assess the mechanism of the process through studies of the dependence of deposit composition and structure on the individual steps in the cycle. Sophisticated surface science tools are used to follow surface coverages, composition and stoichiometry. Crystallographic structure, orientation, and quality of electrodeposited films as well as luminescent properties of the films are also routinely characterized. %%% Electrodeposition methodologies offer new pathways to the synthesis and processing of compound semiconductors used in applications such as solar cells, telecommunications, and computing, and provide several potential advantages over existing technologies such as lower temperature deposition, and lower cost processing because of the known capabilities to scale electrochemical processes to large areas once the underlying fundamental parameters have been identified and understood. ***
小行星9400570 将进行化合物半导体材料的薄层电化学原子层外延(ECALE)的基础研究。在ECALE中,衬底的电化学电势用于控制沉积过程。 利用欠电位沉积现象,即在低于使元素存款在其自身上所需的电化学电势的电化学电势下形成元素的原子层,并将其用于逐层原子地存款化合物半导体材料。 每个沉积循环包括溶液引入、电位变化和冲洗的顺序。 当前的研究工作涉及详细的研究,通过研究存款组成和结构对周期中各个步骤的依赖性来确定和评估该过程的机制。 先进的表面科学工具用于跟踪表面覆盖率,成分和化学计量。 电沉积膜的晶体结构、取向和质量以及膜的发光性质也常规地表征。 电沉积方法为合成和加工用于太阳能电池、电信和计算等应用的化合物半导体提供了新的途径,并提供了优于现有技术的几个潜在优势,如低温沉积,并且由于已知的将电化学过程缩放到大面积的能力已经被识别和理解。 ***
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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John Stickney其他文献
John Stickney的其他文献
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{{ truncateString('John Stickney', 18)}}的其他基金
Formation of Germanene, the Ge Analog of Graphene, using Electrochemical Atomic Layer Deposition (E-ALD)
使用电化学原子层沉积 (E-ALD) 形成锗烯(石墨烯的 Ge 类似物)
- 批准号:
1410109 - 财政年份:2014
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
Condensed Phase Atomic Layer Deposition (CP-ALD)
凝聚相原子层沉积 (CP-ALD)
- 批准号:
1006747 - 财政年份:2010
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
Metal Semiconductor Interface Growth Using Electrochemical Atomic Layer Deposition (ALD)
使用电化学原子层沉积 (ALD) 进行金属半导体界面生长
- 批准号:
0704142 - 财政年份:2007
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
Structure Control in Electrochemical Atomic Layer Eptiaxy
电化学原子层外延中的结构控制
- 批准号:
0312130 - 财政年份:2003
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
NER: Electrodeposition of Nanostructured Compound Semiconductors
NER:纳米结构化合物半导体的电沉积
- 批准号:
0210506 - 财政年份:2002
- 资助金额:
$ 23.46万 - 项目类别:
Standard Grant
Surface Chemistry Studies During Thin-Film Growth Using Electrochemical Atomic Layer Epitaxy (EC-ALE)
使用电化学原子层外延 (EC-ALE) 进行薄膜生长过程中的表面化学研究
- 批准号:
0075868 - 财政年份:2000
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
Surface Limited Reactions in the Electrochemical Atomic Layer Processing of Compound Semiconductors
化合物半导体电化学原子层加工中的表面有限反应
- 批准号:
9708653 - 财政年份:1997
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
Electrochemical Atomic Layer Epitaxy
电化学原子层外延
- 批准号:
9017431 - 财政年份:1991
- 资助金额:
$ 23.46万 - 项目类别:
Continuing Grant
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