Compound Semiconductor Electrodeposition by Electrochemical Atomic Layer Epitaxy

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9400570 Stickney Fundamental research studies to investigate thin-layer electrochemical atomic layer epitaxy(ECALE) of compound semiconductor materials will be conducted. In ECALE the substrate's electrochemical potential is used to control the deposition process. The phenomenon of underpotential deposition, whereby an atomic layer of an element forms at an electrochemical potential lower than that needed to deposit the element on itself, is exploited and used to deposit compound semiconductor materials atomic layer by layer. Each deposition cycle consists of a sequence involving solution introduction, potential changes, and rinsing. The current research effort involves detailed studies to determine and assess the mechanism of the process through studies of the dependence of deposit composition and structure on the individual steps in the cycle. Sophisticated surface science tools are used to follow surface coverages, composition and stoichiometry. Crystallographic structure, orientation, and quality of electrodeposited films as well as luminescent properties of the films are also routinely characterized. %%% Electrodeposition methodologies offer new pathways to the synthesis and processing of compound semiconductors used in applications such as solar cells, telecommunications, and computing, and provide several potential advantages over existing technologies such as lower temperature deposition, and lower cost processing because of the known capabilities to scale electrochemical processes to large areas once the underlying fundamental parameters have been identified and understood. ***