CAREER: Research and Education in Electronic Materials
CAREER: Research and Education in Electronic Materials
批准号:
9733707
负责人:
Rachel Goldman
金额:
$29.63万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-15 至 2004-03-31
中文摘要
小行星9733707 这个CAREER项目将原子与设备连接起来,努力将基础材料科学与技术联系起来。原子尺度的过程中发生的外延生长和电子性能之间的直接相关性将使用外延生长,原位和非原位测量的组合进行调查。私家侦探将开发一系列与这些基本研究平行的电子材料实验模块,并将其纳入本科课程。 最初的研究系统包括InAs基薄膜和异质结构,其高电子迁移率和表面积累使它们有希望作为汽车应用的磁场传感器。本项目将研究表面原子附着的细节如何影响薄膜的电子迁移率,以及其作为磁场传感器的性能。研究生将接触到从基础材料科学到应用方面的研究。本科生将积极参与电子和磁性测量系统的设计,建造和利用,这些系统将作为本科实验室模块的原型,以培养学生的实验和分析技能,并通过发现加强学习。 该项目解决了具有高技术相关性的材料科学专题领域的基础研究问题。 该研究将为电子材料和先进设备的重要方面提供基础材料科学知识。该计划的一个重要特点是强调教育,并通过在基础和技术上重要的研究领域培养学生,将研究与教育相结合。 ***
英文摘要
9733707 Goldman This CAREER project bridges atoms to devices striving to link basic materials science with technology. Direct correlations between atomic scale processes occurring during epitaxial growth and electronic properties will be investigated using a combination of epitaxial growth, in-situ and ex-situ measurements. The P.I. will develop a series of laboratory modules in electronic materials which parallel these basic investigations, and incorporate them into undergraduate courses. Initial systems for study include InAs-based films and heterostructures whose high electron mobility and surface accumulation make them promising as magnetic field sensors for automotive applications. This project will investigate how details of atom attachment on a surface affect the electron mobility of a thin film, and its resulting performance as a magnetic field sensor. Graduate students will be exposed to research spanning fundamental materials science to applied aspects. Undergraduate students will actively participate in the design, construction, and utilization of electronic and magnetic measurement systems, which will serve as prototypes for undergraduate laboratory modules to develop studentsO experimental and analytical skills, and to enhance learning through discovery. %%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic materials and advanced devices. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***
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MRSEC: Center for Materials Innovations at Michigan
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批准号:2309029
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项目类别:Cooperative Agreement
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资助金额:$1800.0万
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财政年份:2023
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负责人:Rachel Goldman
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依托单位:
NSF/ENG/ECCS-BSF: Semiconductor Polytype Heterostructures: A Pathway to Superior Power Electronics
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批准号:2240388
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2023
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负责人:Rachel Goldman
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依托单位:
Influence of Solute Incorporation Mechanisms on the Properties of Highly Mismatched Alloys
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批准号:1810280
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项目类别:Standard Grant
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资助金额:$42.5万
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财政年份:2018
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负责人:Rachel Goldman
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依托单位:
NSF/ENG/ECCS-BSF: Self-Assembled Superlattice Nanowires: A Pathway to High Efficiency Thermoelectrics
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批准号:1610362
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2016
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys
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批准号:1410282
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项目类别:Continuing Grant
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资助金额:$52.0万
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财政年份:2014
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride-Bismide Semiconductor Alloys
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批准号:1006835
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2010
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负责人:Rachel Goldman
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依托单位:
Ion-Cut-Synthesis for Materials Integration
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批准号:0700301
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Rachel Goldman
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依托单位:
FRG: Tailoring the Properties of Dilute Nitride Semiconductor Alloys
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批准号:0606406
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Rachel Goldman
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依托单位:
NER: Role of Elastic Anisotropy in Semiconductor Nanopatterning
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批准号:0210714
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2002
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负责人:Rachel Goldman
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依托单位:
Acquisition of Instruments for Growth and In-Situ Characterization of Mixed Anion Nitride-Arsenide Alloys and for Education
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批准号:9975701
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项目类别:Standard Grant
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资助金额:$10.5万
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财政年份:1999
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负责人:Rachel Goldman
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依托单位:
国内基金
海外基金
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