CAREER: Research and Education in Electronic Materials
CAREER: Research and Education in Electronic Materials
批准号:
9733707
负责人:
Rachel Goldman
金额:
$29.63万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-15 至 2004-03-31
中文摘要
9733707高盛这个职业项目将原子与设备连接起来,努力将基础材料科学与技术联系起来。使用外延生长、原位和非原位测量相结合的方法,研究外延生长过程中发生的原子尺度过程与电子性质之间的直接关联。P.I.将开发一系列电子材料实验模块,与这些基础研究平行,并将它们纳入本科课程。最初的研究系统包括InAs基薄膜和异质结,它们的高电子迁移率和表面积累使其有望成为汽车应用的磁场传感器。这个项目将研究原子附着在表面的细节如何影响薄膜的电子迁移率,以及由此产生的作为磁场传感器的性能。研究生将接触到从基础材料科学到应用方面的研究。本科生将积极参与设计、建造和使用电磁测量系统,这些系统将作为本科生实验模块的原型,培养学生的实验和分析技能,并在发现中加强学习。%该项目致力于具有高度技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子材料和先进器件的重要方面贡献基本的材料科学知识。该计划的一个重要特点是强调教育,并通过在一个具有根本和技术意义的研究领域对学生进行培训,将研究与教育相结合。***
英文摘要
9733707 Goldman This CAREER project bridges atoms to devices striving to link basic materials science with technology. Direct correlations between atomic scale processes occurring during epitaxial growth and electronic properties will be investigated using a combination of epitaxial growth, in-situ and ex-situ measurements. The P.I. will develop a series of laboratory modules in electronic materials which parallel these basic investigations, and incorporate them into undergraduate courses. Initial systems for study include InAs-based films and heterostructures whose high electron mobility and surface accumulation make them promising as magnetic field sensors for automotive applications. This project will investigate how details of atom attachment on a surface affect the electron mobility of a thin film, and its resulting performance as a magnetic field sensor. Graduate students will be exposed to research spanning fundamental materials science to applied aspects. Undergraduate students will actively participate in the design, construction, and utilization of electronic and magnetic measurement systems, which will serve as prototypes for undergraduate laboratory modules to develop studentsO experimental and analytical skills, and to enhance learning through discovery. %%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic materials and advanced devices. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***
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MRSEC: Center for Materials Innovations at Michigan
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批准号:2309029
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项目类别:Cooperative Agreement
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资助金额:$1800.0万
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财政年份:2023
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负责人:Rachel Goldman
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依托单位:
NSF/ENG/ECCS-BSF: Semiconductor Polytype Heterostructures: A Pathway to Superior Power Electronics
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批准号:2240388
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2023
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负责人:Rachel Goldman
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依托单位:
Influence of Solute Incorporation Mechanisms on the Properties of Highly Mismatched Alloys
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批准号:1810280
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项目类别:Standard Grant
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资助金额:$42.5万
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财政年份:2018
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负责人:Rachel Goldman
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依托单位:
NSF/ENG/ECCS-BSF: Self-Assembled Superlattice Nanowires: A Pathway to High Efficiency Thermoelectrics
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批准号:1610362
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2016
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys
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批准号:1410282
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项目类别:Continuing Grant
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资助金额:$52.0万
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财政年份:2014
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride-Bismide Semiconductor Alloys
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批准号:1006835
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2010
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负责人:Rachel Goldman
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依托单位:
Ion-Cut-Synthesis for Materials Integration
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批准号:0700301
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Rachel Goldman
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依托单位:
FRG: Tailoring the Properties of Dilute Nitride Semiconductor Alloys
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批准号:0606406
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Rachel Goldman
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依托单位:
NER: Role of Elastic Anisotropy in Semiconductor Nanopatterning
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批准号:0210714
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2002
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负责人:Rachel Goldman
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依托单位:
Acquisition of Instruments for Growth and In-Situ Characterization of Mixed Anion Nitride-Arsenide Alloys and for Education
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批准号:9975701
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项目类别:Standard Grant
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资助金额:$10.5万
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财政年份:1999
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负责人:Rachel Goldman
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依托单位:
国内基金
海外基金
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