Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys

定制稀氮化物双胺半导体合金的性能

• 批准号: 1410282
• 负责人: Rachel Goldman
• 金额: $ 52万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2019-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1410282&HistoricalAwards=false
• 关键词: Tailoring; Properties; Dilute; Nitride; Bismide

Non-technical Description: The project addresses basic research issues in a topical area of materials science with technological relevance in optoelectronics and electronics, including temperature-insensitive lasers, high-selectivity spin valves, and high performance transistors for telecommunications, radar, and automotive industries. The research program involves synthesis of GaAs-based thin films with dilute nitride-bismide incorporation. The ultimate goal is to understand the film growth mechanisms and correlate them with materials properties. Graduate, undergraduate, and high school students benefit from working together in an interdisciplinary scientific learning environment across disciplines of chemistry, physics, and engineering. The established collaboration constitutes an advantageous approach, benefitting from the complementary expertise of investigators covering experiment and theory. The new knowledge gained is broadly disseminated through publications and presentations, and curriculum development. Outreach activities emphasize the mentoring of women and underrepresented minorities.Technical Description: This project aims for greater understanding and better control of the incorporation of N and Bi into GaAs-based superlattices and heterostructures, over length-scales ranging from sub-nanometer, to tens of nanometers to micrometers. A primary goal of the project is to develop new understanding of epitaxial growth, solute incorporation, carrier compensation, and thermal stability of GaAsNBi alloys and heterostructures. Specifically, strain-balanced GaAsN/GaAsBi heterostructures and superlattices, and GaAsNBi alloys are synthesized using plasma-assisted molecular-beam epitaxy, with various dopants, group V sources, and vicinal substrates. The nanoscale structural characteristics are determined using state-of-the-art microscopic and spectroscopic techniques. The composition-dependence of band offsets in GaAsN/GaAsBi heterojunctions and superlattices is explored. The experimental work is complemented by a set of computational studies, including continuum and effective-mass based calculations. The project at the University of Michigan involves collaborations with scientists at the University of Notre Dame, Los Alamos National Laboratory, Wroclaw University (Poland), the University of College Cork, and the Tyndall Institute (Ireland).

非技术描述：该项目在材料科学领域的基础研究问题上，具有光电和电子设备中的技术相关性，包括温度不敏感的激光器，高选择性旋转阀以及电信，雷达和自动性行业的高性能晶体管。该研究计划涉及与稀氮化物 - 二甲化合物合成基于GAA的薄膜。 最终目标是了解膜的增长机制，并将其与材料特性相关联。研究生，本科和高中生从化学，物理和工程学科的跨学科科学学习环境中共同合作。既定的合作构成了一种有利的方法，这受益于涵盖实验和理论的调查人员的补充专业知识。获得的新知识通过出版物和演示以及课程发展广泛传播。推广活动强调了妇女和代表性不足的少数群体的指导。技术描述：该项目的目的是更好地理解和更好地控制N和BI将N和BI纳入基于GAAS的超级晶格和异质结构，超过了从纳米表的长度范围，从纳米纳米到纳米米的数量。该项目的主要目标是对Gaasnbi合金和异质结构的外延生长，溶质融合，载体补偿以及热稳定性发展新的了解。具体而言，使用等离子体辅助的分子梁外延和各种掺杂剂，v源和杂化底物合成应变平衡的GAASN/GAASBI异质结构和超晶格和Gaasnbi合金。使用最先进的微观和光谱技术确定纳米级结构特征。探索了gaasn/gaasbi异缘和超晶格中频带偏移的组成依赖性。一系列计算研究（包括连续和有效的质量计算）补充了实验工作。密歇根大学的项目涉及与巴黎圣母院，洛斯阿拉莫斯国家实验室，弗兰克大学（波兰），科克大学和廷恩德尔研究所（爱尔兰）的科学家合作。

项目成果

Surfactant-induced chemical ordering of GaAsN:Bi

表面活性剂诱导的 GaAsN:Bi 化学有序化

• DOI: 10.1063/1.5045606
• 发表时间: 2018
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Occena, J.;Jen, T.;Lu, H.;Carter, B. A.;Jimson, T. S.;Norman, A. G.;Goldman, R. S.
• 通讯作者: Goldman, R. S.