Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys

定制稀氮化物双胺半导体合金的性能

• 批准号: 1410282
• 负责人: Rachel Goldman
• 金额: $ 52万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2019-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1410282&HistoricalAwards=false
• 关键词: Tailoring; Properties; Dilute; Nitride; Bismide

Non-technical Description: The project addresses basic research issues in a topical area of materials science with technological relevance in optoelectronics and electronics, including temperature-insensitive lasers, high-selectivity spin valves, and high performance transistors for telecommunications, radar, and automotive industries. The research program involves synthesis of GaAs-based thin films with dilute nitride-bismide incorporation. The ultimate goal is to understand the film growth mechanisms and correlate them with materials properties. Graduate, undergraduate, and high school students benefit from working together in an interdisciplinary scientific learning environment across disciplines of chemistry, physics, and engineering. The established collaboration constitutes an advantageous approach, benefitting from the complementary expertise of investigators covering experiment and theory. The new knowledge gained is broadly disseminated through publications and presentations, and curriculum development. Outreach activities emphasize the mentoring of women and underrepresented minorities.Technical Description: This project aims for greater understanding and better control of the incorporation of N and Bi into GaAs-based superlattices and heterostructures, over length-scales ranging from sub-nanometer, to tens of nanometers to micrometers. A primary goal of the project is to develop new understanding of epitaxial growth, solute incorporation, carrier compensation, and thermal stability of GaAsNBi alloys and heterostructures. Specifically, strain-balanced GaAsN/GaAsBi heterostructures and superlattices, and GaAsNBi alloys are synthesized using plasma-assisted molecular-beam epitaxy, with various dopants, group V sources, and vicinal substrates. The nanoscale structural characteristics are determined using state-of-the-art microscopic and spectroscopic techniques. The composition-dependence of band offsets in GaAsN/GaAsBi heterojunctions and superlattices is explored. The experimental work is complemented by a set of computational studies, including continuum and effective-mass based calculations. The project at the University of Michigan involves collaborations with scientists at the University of Notre Dame, Los Alamos National Laboratory, Wroclaw University (Poland), the University of College Cork, and the Tyndall Institute (Ireland).

非技术描述：该项目涉及材料科学主题领域的基础研究问题，与光电子和电子技术相关，包括温度不敏感激光器，高选择性自旋阀以及用于电信，雷达和汽车行业的高性能晶体管。研究计划包括合成GaAs基薄膜与稀氮化物-二酰亚胺掺入。 最终的目标是了解薄膜的生长机制，并将它们与材料性能相关联。研究生、本科生和高中生在化学、物理和工程等学科的跨学科科学学习环境中共同工作，从中受益。已建立的合作构成了一种有利的方法，受益于涵盖实验和理论的研究人员的互补专业知识。通过出版物和介绍以及课程编制广泛传播所获得的新知识。技术说明：该项目旨在更好地理解和更好地控制将N和Bi掺入GaAs基超晶格和异质结构中，长度范围从亚纳米到数十纳米到微米。该项目的主要目标是发展新的理解外延生长，溶质掺入，载流子补偿，和GaAsNBi合金和异质结的热稳定性。具体而言，应变平衡的GaAs N/GaAs Bi异质结构和超晶格，和GaAs NBi合金的合成使用等离子体辅助分子束外延，与各种掺杂剂，V族源，和邻位衬底。纳米级的结构特征，确定使用国家的最先进的显微镜和光谱技术。研究了GaAsN/GaAsBi异质结和超晶格中能带偏移的组分依赖性。实验工作是由一组计算研究，包括连续和有效质量为基础的计算补充。密歇根大学的项目涉及与圣母大学、洛斯阿拉莫斯国家实验室、弗罗茨瓦夫大学（波兰）、科克学院大学和廷德尔研究所（爱尔兰）的科学家合作。

项目成果

Surfactant-induced chemical ordering of GaAsN:Bi

表面活性剂诱导的 GaAsN:Bi 化学有序化

• DOI: 10.1063/1.5045606
• 发表时间: 2018
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Occena, J.;Jen, T.;Lu, H.;Carter, B. A.;Jimson, T. S.;Norman, A. G.;Goldman, R. S.
• 通讯作者: Goldman, R. S.