FRG: Tailoring the Properties of Dilute Nitride Semiconductor Alloys

FRG：定制稀氮化物半导体合金的性能

• 批准号: 0606406
• 负责人: Rachel Goldman
• 金额: --
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-06-01 至 2010-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0606406&HistoricalAwards=false
• 关键词: FRG; Tailoring; Properties; Dilute; Nitride

Technical: This project explores the relationship between indium composition (and lattice parameter) and the energy bandgap for InGaAsN alloys. The collaborative experimental and theoretical approach aims to understand and control the atomic to nanometer-scale structure of dilute nitride semiconductor alloys, in order to tailor the properties of heterostructures for a variety of applications. The project is interdisciplinary integrating expertise in materials science, physics, and electrical engineering; experimentalists at the U-Michigan and the U-Notre Dame and theorists at Ucollege in Cork, Ireland will strive for greater understanding of microstructure and properties of dilute nitride semiconductor heterostructures. To this end, the precise synthesis conditions needed to manipulate the microstructure and consequent electronic states and optical emission efficiencies of these alloys will be identified. Dilute nitride alloy films will be synthesized using plasma-assisted molecular-beam epitaxy. The microstructure will be tailored using a novel approach to seed compositional patterns using pregrowth In- and Ga- focused-ion-beam implantation. The atomic-to-nanometer-scale structure will be characterized using in-situ scanning tunneling microscopy (STM), as well as cross-sectional STM and transmission electron microscopy, high-resolution x-ray diffraction, and nuclear reaction analysis. Elastic properties will be determined with real-time measurements of wafer curvature during growth, and nearfield Raman spectroscopy following growth. The electronic states will be examined using scanning tunneling spectroscopy, near-field piezorelectivity, and resistivity and Hall measurements, in conventional and gated configurations. Optical properties will be determined using absorption and photoluminescence, magneto-luminescence, and near-field scanning optical microscopy. All of these results will be interpreted using a complementary set of computational studies, including density functional theory and tight-binding calculations to interpret STM images and determine the effects of N clustering on elastic properties; as well as continuum and effective-mass based calculations of the effects of N clusters on the electron mobility and optical properties. The work accomplished in this project will lay the foundation for a larger effort to develop novel electronic, optoelectronic, and photovoltaic devices.Non-Technical: The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The approach is interdisciplinary integrating expertise in materials science, physics, and electrical engineering, bringing together experimentalists at the U-Michigan and the U-Notre Dame and theorists at U-College in Cork, Ireland. This creates unique education and training opportunities for graduate, undergraduate, and high school students working together as part of a team effort in forefront electronic materials research. The project includes (a) the creation of a multi-disciplinary scientific learning environment for students at a variety of levels (from K12 to graduate) and from several underrepresented groups (including women, African-Americans, and Latinos), and (b) the creation of new knowledge expected to enable new technologies that will benefit society.

技术：本项目探索铟成分（和晶格参数）与InGaAsN合金能带隙之间的关系。合作的实验和理论方法旨在理解和控制稀氮化物半导体合金的原子到纳米尺度的结构，以便为各种应用定制异质结构的特性。该项目是跨学科的整合材料科学，物理学和电气工程的专业知识;在U-Michigan和U-Notre Dame的实验学家和理论家在Ucollege在科克，爱尔兰将努力更好地了解稀氮化物半导体异质结构的微观结构和性能。为此，需要精确的合成条件，以操纵这些合金的微观结构和随之而来的电子状态和光发射效率将被确定。利用等离子体辅助分子束外延技术，将合成稀氮化物合金薄膜。微结构将使用一种新的方法来定制种子成分图案，使用预生长In和Ga聚焦离子束注入。原子到纳米尺度的结构将使用原位扫描隧道显微镜（STM），以及横截面STM和透射电子显微镜，高分辨率X射线衍射和核反应分析进行表征。弹性性能将通过生长过程中晶片曲率的实时测量和生长后的近场拉曼光谱来确定。电子状态将使用扫描隧道光谱，近场piezorelectivity，电阻率和霍尔测量，在传统的和门控配置进行检查。光学性质将使用吸收和光致发光、磁致发光和近场扫描光学显微镜来确定。所有这些结果将被解释使用一组互补的计算研究，包括密度泛函理论和紧束缚计算解释STM图像和确定的影响N集群的弹性性能;以及连续和有效质量为基础的计算N集群的电子迁移率和光学性能的影响。本项目所完成的工作将为进一步开发新型电子、光电和光伏器件奠定基础。非技术性：本项目涉及材料科学领域的基础研究问题，具有很高的潜在技术相关性。该研究将为电子设备的新理解和能力提供基础材料科学知识。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该方法是跨学科的，整合了材料科学，物理学和电气工程方面的专业知识，汇集了U-Michigan和U-Notre Dame的实验学家和爱尔兰科克的U-College的理论家。这为研究生，本科生和高中生创造了独特的教育和培训机会，作为团队努力的一部分，共同致力于前沿电子材料研究。该项目包括：（a）为各级学生（从K12到研究生）和几个代表性不足的群体（包括妇女、非洲裔美国人和拉丁美洲人）创造多学科的科学学习环境;（B）创造新知识，使新技术能够造福社会。