NSF/ENG/ECCS-BSF: Semiconductor Polytype Heterostructures: A Pathway to Superior Power Electronics

NSF/ENG/ECCS-BSF:半导体多型异质结构:通往卓越电力电子器件的途径

基本信息

项目摘要

Non-technical Description: This project aims to develop a new building block for electronics, semiconductor polytype heterostructures, which consist of adjacent layers of lattice-matched materials differing only in their atomic stacking sequences. Semiconductor polytype heterostructures are expected to result in the formation of a polarization-doped two-dimensional electron gas, with both high carrier concentration and high carrier mobility, resulting in ultra-high conductivity; thus, they are expected to offer a timely solution to a near-decade plateau in transistor speed. The project provides training to graduate, undergraduate, and high school students, engaging them in a collaboration between the University of Michigan and Ben-Gurion University. The collaboration integrates the expertise of the U.S. investigators (molecular-beam epitaxy and crystallographic characterization of semiconductor polytype films and heterostructures) with that of the Israeli investigators (spectroscopic characterization of polytype heterostructures and fabrication/characterization of high-electron mobility transistors). The new knowledge gained will be broadly disseminated through publications and presentations, and graduate and undergraduate curriculum development. Outreach activities emphasize the mentoring of women and underrepresented minorities.Technical Description: The project seeks new understanding ZB vs. WZ polytype selection and the electronic states/transport properties of ZB/WZ polytype heterostructures, thereby informing strategies for fabrication of polytype heterostructures. The interplay between surface reconstruction, polytype selection, and local electronic states will be monitored in real-time during epitaxy using in-situ reflection high-energy electron diffraction (RHEED), multi-beam optical stress sensing, and scanning-tunneling microscopy. In addition to examining growth kinetics, the influence of electrostatic phenomena, including thermal and electron-induced charging, on WZ vs. ZB polytype selection in both ZB-preferring (GaAs) and WZ-preferring (GaN) materials will be explored. A machine-learning approach using convolutional neural networks will be used to quantify and classify RHEED patterns, thereby accelerating the process of identifying appropriate growth kinetics and induced surface charging to select WZ vs. ZB polytypes. Following epitaxy, the interface structure and polarity will be examined using high-resolution and scanning transmission electron microscopy, selected-area and convergent-beam electron diffraction, and x-ray diffraction. The electronic states will be examined using scanning tunneling spectroscopy and optical spectroscopic tools based upon the Franz-Keldysh effect. Upon identification of the key growth kinetics and/or electrostatic phenomena to tailor polytype selection, ZB/WZ polytype hetero-structures for HEMTs will be fabricated. Expected outcomes of this work include the identification of strategies for polytype selection during epitaxy of thin films that prefer the ZB or WZ polytype, as well as the design and fabrication of ZB/WZ polytype HEMT structures that will facilitate the discovery of new strategies for transistors, with the potential for integration of logic and memory beyond Moore's Law.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术描述:该项目旨在开发一种新的电子元件、半导体多型异质结构的构建模块,该结构由相邻的晶格匹配材料层组成,仅原子堆叠顺序不同。半导体多型异质结构预计会导致形成极化掺杂的二维电子气,具有高载流子浓度和高载流子迁移率,从而导致超高电导率;因此,它们预计会及时解决晶体管速度中近十年的平台。该项目为研究生、本科生和高中生提供培训,让他们参与密歇根大学和本-古里安大学之间的合作。该合作将美国研究人员的专业知识(半导体多型膜和异质结构的分子束外延和晶体学表征)与以色列研究人员的专业知识(多型异质结构的光谱表征和高电子迁移率晶体管的制造/表征)相结合。 所获得的新知识将通过出版物和演讲以及研究生和本科生课程开发广泛传播。技术说明:该项目寻求对ZB与WZ多型选择以及ZB/WZ多型异质结构的电子态/输运特性的新理解,从而为多型异质结构的制造提供信息。表面重建,多型选择,和本地电子状态之间的相互作用将在外延过程中使用原位反射高能电子衍射(RHEED),多束光应力传感,扫描隧道显微镜实时监测。除了研究生长动力学,静电现象的影响,包括热和电子感应充电,对WZ与ZB多型选择在ZB优先(GaAs)和WZ优先(GaN)材料将被探讨。使用卷积神经网络的机器学习方法将用于对RHEED模式进行量化和分类,从而加速识别适当生长动力学和诱导表面充电的过程,以选择WZ与ZB多型体。外延后,界面结构和极性将使用高分辨率和扫描透射电子显微镜,选区和会聚束电子衍射,X射线衍射检查。电子状态将使用扫描隧道光谱和基于Franz-Keldysh效应的光学光谱工具进行检查。在识别关键的生长动力学和/或静电现象以定制多型选择之后,将制造用于HEMT的ZB/WZ多型异质结构。这项工作的预期成果包括确定在薄膜外延过程中选择多型体的策略,这些策略优选ZB或WZ多型体,以及ZB/WZ多型体HEMT结构的设计和制造,这将有助于发现晶体管的新策略,该奖项反映了NSF的法定使命,并被认为是值得的。通过使用基金会的知识价值和更广泛的影响审查标准进行评估来提供支持。

项目成果

期刊论文数量(0)
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Rachel Goldman其他文献

Reactive oxygen species mediate phorbol ester-regulated tyrosine phosphorylation and phospholipase A2 activation: potentiation by vanadate.
活性氧介导佛波酯调节的酪氨酸磷酸化和磷脂酶 A2 激活:钒酸盐的增强作用。
  • DOI:
  • 发表时间:
    1993
  • 期刊:
  • 影响因子:
    4.1
  • 作者:
    Uriel Zor;Ernst Ferber;Pál Gergely;Kornélia Szücs;Viktor Dombrádi;Rachel Goldman
  • 通讯作者:
    Rachel Goldman
Concanavalin A mediated attachment and ingestion of red blood cells by macrophages.
刀豆球蛋白 A 介导巨噬细胞对红细胞的附着和摄取。
  • DOI:
    10.1016/0014-4827(75)90627-8
  • 发表时间:
    1975
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Rachel Goldman;R. A. Cooper
  • 通讯作者:
    R. A. Cooper
Purification and Properties of C<sub>55</sub>-Isoprenylpyrophosphate Phosphatase from <em>Micrococcus lysodeikticus</em>
  • DOI:
    10.1016/s0021-9258(19)44947-8
  • 发表时间:
    1972-08-25
  • 期刊:
  • 影响因子:
  • 作者:
    Rachel Goldman;Jack L. Strominger
  • 通讯作者:
    Jack L. Strominger
The effect of cytochalasin B and colchicine on concanavalin A induced vacuolation in mouse peritoneal macrophages.
细胞松弛素 B 和秋水仙碱对刀豆球蛋白 A 诱导的小鼠腹膜巨噬细胞空泡形成的影响。
  • DOI:
  • 发表时间:
    1976
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Rachel Goldman
  • 通讯作者:
    Rachel Goldman
Enzyme membrane model systems and their implication in biological research
  • DOI:
    10.1016/s0300-9084(73)80172-5
  • 发表时间:
    1973-10-29
  • 期刊:
  • 影响因子:
  • 作者:
    Rachel Goldman
  • 通讯作者:
    Rachel Goldman

Rachel Goldman的其他文献

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{{ truncateString('Rachel Goldman', 18)}}的其他基金

MRSEC: Center for Materials Innovations at Michigan
MRSEC:密歇根材料创新中心
  • 批准号:
    2309029
  • 财政年份:
    2023
  • 资助金额:
    $ 45万
  • 项目类别:
    Cooperative Agreement
Influence of Solute Incorporation Mechanisms on the Properties of Highly Mismatched Alloys
溶质掺入机制对高度失配合金性能的影响
  • 批准号:
    1810280
  • 财政年份:
    2018
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
NSF/ENG/ECCS-BSF: Self-Assembled Superlattice Nanowires: A Pathway to High Efficiency Thermoelectrics
NSF/ENG/ECCS-BSF:自组装超晶格纳米线:高效热电材料的途径
  • 批准号:
    1610362
  • 财政年份:
    2016
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys
定制稀氮化物双胺半导体合金的性能
  • 批准号:
    1410282
  • 财政年份:
    2014
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
Tailoring the Properties of Dilute Nitride-Bismide Semiconductor Alloys
定制稀氮化物-双胺半导体合金的性能
  • 批准号:
    1006835
  • 财政年份:
    2010
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Ion-Cut-Synthesis for Materials Integration
用于材料集成的离子切割合成
  • 批准号:
    0700301
  • 财政年份:
    2007
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
FRG: Tailoring the Properties of Dilute Nitride Semiconductor Alloys
FRG:定制稀氮化物半导体合金的性能
  • 批准号:
    0606406
  • 财政年份:
    2006
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant
NER: Role of Elastic Anisotropy in Semiconductor Nanopatterning
NER:弹性各向异性在半导体纳米图案化中的作用
  • 批准号:
    0210714
  • 财政年份:
    2002
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Acquisition of Instruments for Growth and In-Situ Characterization of Mixed Anion Nitride-Arsenide Alloys and for Education
购买用于混合阴离子氮化物-砷化物合金的生长和原位表征以及教育的仪器
  • 批准号:
    9975701
  • 财政年份:
    1999
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
CAREER: Research and Education in Electronic Materials
职业:电子材料的研究和教育
  • 批准号:
    9733707
  • 财政年份:
    1998
  • 资助金额:
    $ 45万
  • 项目类别:
    Continuing Grant

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