Acquisition of Instruments for Growth and In-Situ Characterization of Mixed Anion Nitride-Arsenide Alloys and for Education
Acquisition of Instruments for Growth and In-Situ Characterization of Mixed Anion Nitride-Arsenide Alloys and for Education
批准号:
9975701
负责人:
Rachel Goldman
金额:
$10.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-08-15 至 2001-07-31
中文摘要
该奖项将为原位研究混合阴离子InGaAsN薄膜和异质结构中合金形成所需的仪器的购置提供部分支持,以开发具有可调谐光子特性的新材料。这些仪器(活性氮源、低温泵和MBE-STM传输系统)将与现有的超高真空扫描隧道显微镜和瓦里安Gen II分子束外延生长室相结合,以促进器件质量的生长和混合阴离子氮-砷化合金的原位表征。该设备的收购将为密歇根大学和东密歇根大学的大约9名研究生和本科生提供最先进的仪器。授予大学。此外,该系统将通过促进技术上重要的氮基材料的发展,为电子和光子材料的本科实验室模块提供支持,从而影响另外30-40名本科生。该系统还将在本科和研究生课程中提供成长和表征演示的机会。该奖项预计将大大加强几所院校教师和学生的研究和教育活动。
英文摘要
9975701GoldmanThis award will provide partial support for the acquisition of instruments needed for in-situ investigations of alloy formation in mixed anion InGaAsN films and heterostructures towards the development of novel materials with tunable photonic properties. The instruments (Reactive Nitrogen Source, Cryogenic Pump, and MBE-STM Transfer System) will be combined with the existing ultra-high vacuum scanning tunneling microscope and Varian Gen II molecular beam epitaxial growth chamber, in order to facilitate device-quality growth and in-situ characterization of mixed anion nitride-arsenide alloys.The acquisition of this equipment will provide state-of-the-art instrumentation for approximately 9 graduate and undergraduate students, at the University of Michigan and at Eastern Michigan University, a nearby non-Ph.D. granting University. Furthermore, the system will impact additional 30-40 undergraduate students by enabling growth of technologically important nitride-based materials for use in undergraduate laboratory modules in electronic and photonic materials. The system will also provide opportunities for growth and characterization demonstrations in undergraduate and graduate courses. %%%This award is expected to significantly enhance research and educational activities of faculty and students at several institutions.
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会议论文
MRSEC: Center for Materials Innovations at Michigan
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批准号:2309029
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项目类别:Cooperative Agreement
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资助金额:$1800.0万
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财政年份:2023
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负责人:Rachel Goldman
-
依托单位:
NSF/ENG/ECCS-BSF: Semiconductor Polytype Heterostructures: A Pathway to Superior Power Electronics
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批准号:2240388
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2023
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负责人:Rachel Goldman
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依托单位:
Influence of Solute Incorporation Mechanisms on the Properties of Highly Mismatched Alloys
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批准号:1810280
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项目类别:Standard Grant
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资助金额:$42.5万
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财政年份:2018
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负责人:Rachel Goldman
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依托单位:
NSF/ENG/ECCS-BSF: Self-Assembled Superlattice Nanowires: A Pathway to High Efficiency Thermoelectrics
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批准号:1610362
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2016
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride Bismide Semiconductor Alloys
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批准号:1410282
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项目类别:Continuing Grant
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资助金额:$52.0万
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财政年份:2014
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负责人:Rachel Goldman
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依托单位:
Tailoring the Properties of Dilute Nitride-Bismide Semiconductor Alloys
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批准号:1006835
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2010
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负责人:Rachel Goldman
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依托单位:
Ion-Cut-Synthesis for Materials Integration
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批准号:0700301
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Rachel Goldman
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依托单位:
FRG: Tailoring the Properties of Dilute Nitride Semiconductor Alloys
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批准号:0606406
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Rachel Goldman
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依托单位:
NER: Role of Elastic Anisotropy in Semiconductor Nanopatterning
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批准号:0210714
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2002
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负责人:Rachel Goldman
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依托单位:
CAREER: Research and Education in Electronic Materials
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批准号:9733707
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项目类别:Continuing Grant
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资助金额:$29.63万
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财政年份:1998
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负责人:Rachel Goldman
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依托单位:
海外基金