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New process for formation of gallium nitride thin films locally on selected areas

在选定区域局部形成氮化镓薄膜的新工艺

基本信息

批准号：
14550300
负责人：
YANAGISAWA Junichi
金额：
$ 2.3万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550300/
关键词：
gallium nitride GaN thin film nitrogen radical hot-filament method ion beam direct deposition XPS イオンビーム直接堆積局所薄膜形成

项目摘要

As a new method to form hydrogen-free gallium nitride (GaN) thin layers, ion beam direct deposition method under nitrogen ambient was investigated. After 100 eV Ga ion beam was irradiated on a chip of a Si(111) wafer under a nitrogen-radical atmosphere, the composition and the chemical bonding nature of the deposited materials were investigated by X-ray photoelectron spectroscopy (XPS). The XPS spectra of the deposited Ga under nitrogen-radical were very similar to that of an epitaxially grown GaN reference, indicating the possibility of the formation of GaN thin layer using the present method. Because the pure N_2 gas was used as the nitrogen-radical source, no impurity fragments should be incorporated in the deposited materials. As a result, it is shown that the formation of hydrogen-free GaN layers is possible by the present method.In addition, we report the formation of GaN layer at outermost surface of SiN films by using low-energy (60-200 eV) Ga ion irradiation. It is found that the Ga ions were surely implanted in the insulative SiN surface, and the position of the XPS signal of Ga was shifted to 20.2 eV, showing the existence of Ga-N bonds. Because the ion energy used was large enough to break the Si-N bonds, this result shows that the N atoms can be bonded easily with implanted Ga atoms than Si atoms. These low-energy Ga-implanted SiN regions might be used as nucleation sites in the growth of GaN layers. The present result indicates that this method has a potential to fabricate GaN films on any kinds of materials, only if the SiN layer was able to be formed on them, resulting the formation of multifunctional Si devices and the possible substitution of sapphire and SiC substrates to another low-priced materials such as Si and glass.

作为一种制备无氢氮化镓(GaN)薄膜的新方法，研究了氮气气氛下的离子束直接沉积法。在氮气气氛下，用100 eV的Ga离子束辐照Si(111)晶片后，用X射线光电子能谱(XPS)研究了沉积材料的成分和化学键性质。在氮自由基下沉积的GaN的XPS谱与外延生长的GaN参照物的XPS谱非常相似，表明用本方法可以形成GaN薄层。由于使用纯N_2气体作为氮自由基源，沉积材料中不应含有任何杂质碎片。此外，我们还报道了用低能量(60-200 eV)的GaN离子辐照在SiN薄膜最外表面形成GaN层。发现Ga离子确实被注入到绝缘的SiN表面，并且Ga的XPS信号的位置移动到20.2 eV，表明Ga-N键的存在。由于所使用的离子能量足够大，足以破坏Si-N键，这一结果表明N原子比Si原子更容易与注入的Ga原子成键。这些低能的Ga注入SiN区可能是GaN层生长中的形核中心。结果表明，只要能够在任何材料上形成SiN层，就有可能在任何材料上制备GaN薄膜，从而形成多功能硅器件，并有可能替代蓝宝石和碳化硅衬底以替代其他低价材料，如硅和玻璃。