STTR Phase I: Micromachined Harsh Environment Quantum-Well Nitride Sensors

STTR 第一阶段：微机械恶劣环境量子阱氮化物传感器

• 批准号: 9903630
• 负责人: Richard Mlcak
• 金额: $ 10万
• 依托单位: BOSTON MICROSYSTEMS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-07-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9903630&HistoricalAwards=false
• 关键词: STTR; Phase; Micromachined; Harsh; Environment

This Small Business Technology Transfer (STTR) Phase I project combines a number of key innovations to develop a refractory, highly stable, and ultra-high sensitivity SiC-GaAlN MEMS sensor platform suitable for operating in harsh (high temperature, high pressure, corrosive, and high energy-radiation) environments. This harsh-environment sensor platform is enabled, for the first time, by the integration of three recent innovations: (1) bulk micromachining of single crystal SiC, (2) growth of nitride semiconductor Quantum Well Structures (QWS), and (3) the giant piezoresistance (GPR) effect. GaN-GaAlN QWS devices will be fabricated onto micromachined device-quality single crystal SiC substrates using patented SiC micromachining technologies. SiC is an ideal substrate for growth of nitride semiconductors, and both SiC and GaN-AIN compounds have high (3.0-6.2 eV) band gaps, high melting temperatures (1700-3000 degree C), and excellent mechanical and chemical properties making them eminently suitable for use in harsh environments. The versatility of the giant piezoresistance transduction, SIC-GaAIN sensor platform will first be demonstrated by fabrication of highly sensitive temperature and pressure sensors. Commercial applications will be in: (a) advanced aeropropulsion control systems; (b) automotive and utilities combustion control systems; and (c ) chemical processing facilities. The proposed harsh environment sensor platform has commercial applications for monitoring of pressure, temperature, flow, acceleration, and sound in advanced aeropropulsion control systems (e.g. turbine engines), automotive and utilities combustion control systems, and chemical processing facilities.

该小型企业技术转让（STTR）第一阶段项目结合了许多关键创新，开发了一种耐高温、高稳定性和超高灵敏度的SiC-GaAlN MEMS传感器平台，适用于恶劣（高温、高压、腐蚀性和高能量辐射）环境。这一恶劣环境传感器平台首次集成了三项最新创新技术：（1）单晶SiC的体微加工，（2）氮化物半导体量子阱结构（QWS）的生长，以及（3）巨压阻（GPR）效应。GaN-GaAlN QWS器件将使用专利的SiC微加工技术在微加工器件质量的单晶SiC衬底上制造。SiC是氮化物半导体生长的理想衬底，并且SiC和GaN-AlN化合物都具有高（3.0-6.2 eV）带隙、高熔化温度（1700-3000摄氏度）以及优异的机械和化学性能，使得它们非常适合在恶劣环境中使用。巨型压阻转换，SIC-GaAIN传感器平台的多功能性将首先通过制造高灵敏度的温度和压力传感器来证明。 商业应用将包括：（a）先进的航空推进控制系统;（B）汽车和公用事业燃烧控制系统;（c）化学加工设施。 所提出的恶劣环境传感器平台具有用于监测先进航空推进控制系统（例如涡轮机发动机）、汽车和公用事业燃烧控制系统以及化学处理设施中的压力、温度、流量、加速度和声音的商业应用。