U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
批准号:
9909264
负责人:
Leonid Tsybeskov
金额:
$1.75万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-04-01 至 2001-12-31
中文摘要
9909264齐贝什科夫这三年奖的美国-法国在材料研究方面的合作涉及罗切斯特大学的研究生和本科生Leonid Tsybeskov、摩托罗拉材料技术实验室的研究人员以及法国里尔电子和微电子研究所的Christophe Delerue。 该项目由美国国家科学基金会和法国国家科学研究中心(CNRS)的联合项目支持,重点是硅量子点电子学。 合作研究工作涉及理论家(里尔),材料科学家和应用物理学家(罗切斯特),工业专家(摩托罗拉)。 罗切斯特小组将进行纳米晶硅超晶格中载流子输运的实验和器件原型开发。 这将由里尔对纳米级物体和设备的理论研究加以补充。 摩托罗拉集团将作为该计划的工业指导者,并专注于制造和微电子标准的兼容性。 此外,摩托罗拉的科学家将帮助建立硅量子结构计量学,这是一种表征技术,最终将从大学实验室转移到工业生产线。
英文摘要
9909264TsybeskovThis three-year award for U.S.-France collaboration in materials research involves Leonid Tsybeskov, graduate and undergraduate students at the University of Rochester, researchers at the Material Technology Laboratory of Motorola, and Christophe Delerue at the Institute for Electronic and Microelectronic Research in Lille, France. The project, supported under the joint program of the National Science Foundation and the French National Center for Scientific Research (CNRS), is focused on silicon quantum dot electronics. The collaborative research effort involves theorists (Lille), materials scientists and applied physicists (Rochester), and industrial experts (Motorola). The Rochester group will conduct experiments on carrier transport in nanocrystalline Si superlattices and device prototype development. This will be complemented by theoretical investigations in Lille on nanoscale objects and devices. The Motorola group will serve as industrial mentor to this program and focus on the compatibility of manufacturing and microelectronic standards. In addition, scientists at Motorola will help establish Si quantum structure metrology, a characterization technique, which eventually will be transferred from a university laboratory to an industrial fabrication line.
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会议论文
Resonant Energy Transfer Based Electrically Pumped Hybrid Lasers
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批准号:2221010
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项目类别:Continuing Grant
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资助金额:$44.53万
-
财政年份:2022
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负责人:Leonid Tsybeskov
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依托单位:
Engineering Silicon/Silicon-Germanium Nanostructure Heterointerfaces: Toward Group IV Light Emitters and Lasers
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批准号:1005682
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项目类别:Continuing Grant
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资助金额:$30.82万
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财政年份:2010
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负责人:Leonid Tsybeskov
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依托单位:
Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices
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批准号:1027770
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项目类别:Standard Grant
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资助金额:$28.0万
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财政年份:2010
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负责人:Leonid Tsybeskov
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依托单位:
Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
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批准号:0725443
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Leonid Tsybeskov
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依托单位:
MRI: Acquisition of a low-temperature spectroscopic system with a nanometer spatial resolution
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批准号:0521087
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项目类别:Standard Grant
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资助金额:$20.75万
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财政年份:2005
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负责人:Leonid Tsybeskov
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依托单位:
Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
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批准号:0422039
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Leonid Tsybeskov
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依托单位:
NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures
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批准号:0209422
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:2002
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负责人:Leonid Tsybeskov
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依托单位:
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
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批准号:0296048
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项目类别:Standard Grant
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资助金额:$26.06万
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财政年份:2001
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负责人:Leonid Tsybeskov
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依托单位:
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
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批准号:0296059
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项目类别:Standard Grant
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资助金额:$1.75万
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财政年份:2001
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负责人:Leonid Tsybeskov
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依托单位:
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
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批准号:9901064
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项目类别:Standard Grant
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资助金额:$26.06万
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财政年份:1999
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负责人:Leonid Tsybeskov
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依托单位:
海外基金